BC846BMB
83B
65 V, 100 mA NPN general-purpose transistor
Rev. 1 — 15 May 2012
Product data sheet
1. Product profile
1.1 General description
NPN general-purpose transistor in a leadless ultra small DFN1006B-3 (SOT883B)
Surface-Mounted Device (SMD) plastic package.
SO
T8
1.2 Features and benefits
Leadless ultra small SMD plastic package
Low package height of 0.37 mm
Power dissipation comparable to SOT23
AEC-Q101 qualified
1.3 Applications
General-purpose switching and amplification
Mobile applications
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
V
CE
= 5 V;
I
C
= 2 mA
Conditions
open base
Min
-
-
200
Typ
-
-
-
Max
65
100
450
Unit
V
mA
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
base
emitter
collector
1
3
2
Transparent
top view
1
2
sym021
Simplified outline
Graphic symbol
3
NXP Semiconductors
BC846BMB
65 V, 100 mA NPN general-purpose transistor
3. Ordering information
Table 3.
Ordering information
Package
Name
BC846BMB
DFN1006B-3
Description
leadless ultra small plastic package;
3 solder lands; body 1.0
0.6
0.37 mm
Version
SOT883B
Type number
4. Marking
Table 4.
Marking codes
Marking code
0100 1011
Type number
BC846BMB
4.1 Binary marking code description
PIN 1 INDICATION
READING DIRECTION
READING EXAMPLE:
0111
1011
MARKING CODE
(EXAMPLE)
READING DIRECTION
006aac673
Fig 1.
DFN1006B-3 (SOT883B) binary marking code description
BC846BMB
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 15 May 2012
2 of 11
NXP Semiconductors
BC846BMB
65 V, 100 mA NPN general-purpose transistor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
j
T
amb
T
stg
[1]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
open emitter
open base
open collector
single pulse;
t
p
1 ms
single pulse;
t
p
1 ms
T
amb
25
C
[1]
Min
-
-
-
-
-
-
-
-
65
65
Max
80
65
6
100
200
200
250
150
+150
+150
Unit
V
V
V
mA
mA
mA
mW
C
C
C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1]
Min
-
Typ
-
Max
500
Unit
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
10
3
duty cycle =
Z
th(j-a)
(K/W)
10
2
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
10
0.01
0
006aab603
1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 2.
BC846BMB
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 15 May 2012
3 of 11
NXP Semiconductors
BC846BMB
65 V, 100 mA NPN general-purpose transistor
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol Parameter
I
CBO
collector-base
cut-off current
emitter-base
cut-off current
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
base-emitter voltage
transition frequency
Conditions
V
CB
= 30 V; I
E
= 0 A
V
CB
= 30 V; I
E
= 0 A;
T
j
= 150
C
V
EB
= 5 V; I
E
= 0 A
V
CE
= 5 V; I
C
= 2 mA
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA
I
C
= 2 mA; V
CE
= 5 V
I
C
= 10 mA; V
CE
= 5 V
f
T
C
c
C
e
NF
V
CE
= 5 V; I
C
= 10 mA;
f = 100 MHz
[1]
[2]
[2]
[3]
[3]
Min
-
-
-
200
-
-
-
-
580
-
100
-
-
-
Typ
-
-
-
-
90
200
760
900
660
-
-
2
11
2
Max
15
5
100
450
200
400
-
-
700
770
-
3
-
10
Unit
nA
A
nA
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
mV
mV
mV
mV
mV
mV
MHz
pF
pF
dB
collector capacitance V
CB
= 10 V; I
E
= i
e
= 0 A;
f = 1 MHz
emitter capacitance
noise figure
V
EB
= 0.5 V; I
C
= i
c
= 0 A;
f = 1 MHz
I
C
= 200
A;
V
CE
= 5 V;
R
S
= 2 k; f = 1 kHz;
B = 200 Hz
[1]
[2]
[3]
Pulse test: t
p
300
s;
0.02.
V
BEsat
decreases by approximately 1.7 mV/K with increasing temperature.
V
BE
decreases by approximately 2 mV/K with increasing temperature.
BC846BMB
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 15 May 2012
4 of 11
NXP Semiconductors
BC846BMB
65 V, 100 mA NPN general-purpose transistor
600
h
FE
500
(1)
mgt727
1200
V
BE
(mV)
1000
(1)
mgt728
400
(2)
800
(2)
300
600
(3)
200
(3)
400
100
200
0
10
−1
1
10
10
2
I
C
(mA)
10
3
0
10
−2
10
−1
1
10
10
2
10
3
I
C
(mA)
V
CE
= 5 V
(1) T
amb
= 150
C
(2) T
amb
= 25
C
(3) T
amb
=
55 C
V
CE
= 5 V
(1) T
amb
=
55 C
(2) T
amb
= 25
C
(3) T
amb
= 150
C
Fig 3.
DC current gain as a function of collector
current; typical values
10
4
mgt729
Fig 4.
Base-emitter voltage as a function of collector
current; typical values
mgt730
1200
V
BEsat
(mV)
1000
(1)
V
CEsat
(mV)
10
3
800
(2)
600
(3)
10
2
(1)
(3) (2)
400
200
10
10
−1
1
10
10
2
I
C
(mA)
10
3
0
10
−1
1
10
10
2
I
C
(mA)
10
3
I
C
/I
B
= 20
(1) T
amb
= 150
C
(2) T
amb
= 25
C
(3) T
amb
=
55 C
I
C
/I
B
= 10
(1) T
amb
=
55 C
(2) T
amb
= 25
C
(3) T
amb
= 150
C
Fig 5.
Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 6.
Base-emitter saturation voltage as a function
of collector current; typical values
BC846BMB
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 15 May 2012
5 of 11
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