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PUMH30,115

Description
50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size72KB,10 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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PUMH30,115 Overview

50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR

PUMH30,115 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
Parts packaging codeTSSOP
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Manufacturer packaging codeSOT363
Reach Compliance Codecompli
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)30
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Transistor component materialsSILICON
Base Number Matches1
PEMH30; PUMH30
NPN/NPN double resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = open
Rev. 01 — 28 March 2006
Product data sheet
1. Product profile
1.1 General description
NPN/NPN double Resistor-Equipped Transistors (RET) in Surface Mounted Device (SMD)
plastic packages.
Table 1.
Product overview
Package
Philips
PEMH30
PUMH30
SOT666
SOT363
JEITA
-
SC-88
NPN/PNP
complement
PEMD30
PUMD30
PNP/PNP
complement
PEMB30
PUMB30
Type number
1.2 Features
I
100 mA output current capability
I
Built-in bias resistors
I
Simplifies circuit design
I
Reduces component count
I
Reduces pick and place costs
1.3 Applications
I
Low current peripheral driver
I
Control of IC inputs
I
Cost-saving alternative for BC847BS
and BC847BV
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
O
R1
Quick reference data
Parameter
collector-emitter voltage
output current
bias resistor 1 (input)
Conditions
open base
Min
-
-
1.54
Typ
-
-
2.2
Max
50
100
2.86
Unit
V
mA
kΩ
Per transistor

PUMH30,115 Related Products

PUMH30,115 PEMH30,115 PEMH30,315
Description 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
Brand Name NXP Semiconduc NXP Semiconduc NXP Semiconduc
Is it Rohs certified? conform to conform to conform to
Parts packaging code TSSOP SOT SOT
Contacts 6 6 6
Manufacturer packaging code SOT363 SOT666 SOT666
Reach Compliance Code compli compli compli
package instruction SMALL OUTLINE, R-PDSO-G6 PLASTIC, SMD, 6 PIN -
Maximum collector current (IC) 0.1 A 0.1 A -
Collector-emitter maximum voltage 50 V 50 V -
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR -
Minimum DC current gain (hFE) 30 30 -
JESD-30 code R-PDSO-G6 R-PDSO-F6 -
JESD-609 code e3 e3 -
Humidity sensitivity level 1 1 -
Number of components 2 2 -
Number of terminals 6 6 -
Maximum operating temperature 150 °C 150 °C -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE SMALL OUTLINE -
Peak Reflow Temperature (Celsius) 260 NOT SPECIFIED -
Polarity/channel type NPN NPN -
Maximum power dissipation(Abs) 0.3 W 0.3 W -
Certification status Not Qualified Not Qualified -
surface mount YES YES -
Terminal surface Tin (Sn) Tin (Sn) -
Terminal form GULL WING FLAT -
Terminal location DUAL DUAL -
Maximum time at peak reflow temperature 40 NOT SPECIFIED -
Transistor component materials SILICON SILICON -
Maker - NXP NXP
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