Ordering number : EN3129A
2SB1323 / 2SD1997
SANYO Semiconductors
DATA SHEET
PNP / NPN Epitaxial Planar Silicon Transistors
2SB1323 / 2SD1997
Features
•
•
•
•
•
Compact Motor Driver
Applications
Contains input resistance (R1), base-to-emitter resistance (RBE).
Contains diode between collector and emitter.
Low saturation voltage.
Large current capacity.
Small-sized package making it easy to provide highdensity, small-sized hybrid ICs.
Specifications
( ) : 2SB1323
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Mounted on ceramic board (250mm
✕0.8mm)
2
Conditions
Ratings
(--)40
(--)30
(-
-)6
(-
-)3
(-
-)5
1.5
150
--55 to +150
Unit
V
V
V
A
A
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
hFE1
hFE2
fT
Cob
Conditions
VCB=(--)30V, IE=0A
VCE=(--)2V, IC=(--)0.5A
VCE=(--)2V, IC=(--)2A
VCE=(--)2V, IC=(--)0.5A
VCB=(--)10V, f=1MHz
Ratings
min
70
50
100
(55)40
MHz
pF
typ
max
(--)1.0
Unit
µA
Marking : 2SB1323 : BK
2SD1997 : DO
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
20707EA TI IM TC-00000488 / 10904TN (KT) / O1598HA (KT) / 6089MO, TS No.3129-1/4
2SB1323 / 2SD1997
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter ON State Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Diode Forwad Voltage
Base-to-Emitter Resistance
Base Resistance
Symbol
VCE(sat)
VBE(ON)
V(BR)CBO
V(BR)CEO1
V(BR)CEO2
VF
RBE
R1
Conditions
IC=(--)1A, IB=(--)50mA
VCE=(--)2V, IC=(-
-)1A
IC=(--)10µA, IE=0A
IC=(--)10µA, RBE=∞
IC=(--)10mA, RBE=∞
IF=(--)0.5A
Ratings
min
(--)1
(--)40
(--)40
(--)30
(--)1.5
0.8
120
160
200
typ
(--0.18)0.12
(--)2
max
(-
-0.4)0.3
(-
-)5
Unit
V
V
V
V
V
V
kΩ
Ω
Package Dimensions
unit : mm (typ)
7007A-004
Electrical Connection
Collector
Collector
Top View
4.5
1.6
1.5
Base
R1
RBE
Base
R1
RBE
Emitter
2.5
1.0
4.0
Emitter
PNP
1
0.4
0.5
1.5
3.0
NPN
2
3
0.4
0.75
1 : Base
2 : Collector
3 : Emitter
Bottom View
SANYO : PCP
--
2.2
--
2.0
--
1.8
IC -- VBE(ON)
2SB1323
Ta=
75
°
C
25
°
C
2.2
IC -- VBE(ON)
2SD1997
VCE=2V
VCE= --2V
2.0
1.8
Collector Current, IC -- A
Ta
=
0
0.5
1.0
--
1.2
--
1.0
--
0.8
--
0.6
--
0.4
--
0.2
--
1
--
2
--
3
--
4
--
5
Base-to-Emitter ON-State Voltage, VBE(ON) -- V
ITR09577
0
0
1.2
1.0
0.8
0.6
0.4
0.2
0
1.5
--2
5
°
C
2.0
--
1.4
1.4
75
°
C
25
°
C
--
1.6
Collector Current, IC -- A
--2
5
°
C
1.6
2.5
3.0
Base-to-Emitter ON-State Voltage, VBE(ON) -- V
ITR09578
No.3129-2/4
2SB1323 / 2SD1997
3
hFE -- IC
2SB1323
VCE= --2V
5
3
2
hFE -- IC
2SD1997
VCE=2V
2
DC Current Gain, hFE
7
5
3
2
C
5
°
=7
5
°
C
Ta
2
--2
DC Current Gain, hFE
100
100
7
5
3
2
C
5
°
C
5
°
=7
5
°
C
Ta
2
C
5
°
--2
10
7
5
10
7
5
10
--
10
3
2
3
5 7
--
100
2
3
5 7
--
1000
2 3
Collector Current, IC -- mA
ITR09579
2
3
5
7 100
2
3
5
7 1000
2
3
Collector Current, IC -- mA
3
2
ITR09580
Cob -- VCB
2SB1323
Cob -- VCB
2SD1997
f=1MHz
f=1MHz
2
Output Capacitance, Cob -- pF
100
7
5
Output Capacitance, Cob -- pF
2
3
--
10
Collector-to-Base Voltage, VCB -- V
2
3
5
7
5
7
100
7
5
3
2
3
2
10
7
10
--
1.0
7
1.0
2
3
5
7
10
2
3
5
7
ITR09581
1000
Collector-to-Base Voltage, VCB -- V
ITR09582
--
1000
VCE(sat) -- IC
2SB1323
VCE(sat) -- IC
2SD1997
IC / IB=20
IC / IB=20
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
7
5
3
2
7
5
3
2
°
C
25
5
°
C
=7
Ta
5
°
C
--2
--
100
7
5
3
7
100
7
5
3
=7
Ta
5
°
C
°
C
25
5
°
C
--2
--
100
--
1000
Collector Current, IC -- mA
2
3
5
7
2
3
7
100
2
3
5
7
1000
2
3
ITR09583
1.6
Collector Current, IC -- mA
ITR09584
10
7
5
ASO
ICP=5A
IC=3A
PC -- Ta
2SB1323 / 2SD1997
30
Collector Dissipation, PC -- W
Collector Current, IC -- A
3
2
1.0
7
5
3
2
0.1
7
5
3
2
10
DC
1m
s
ms
0
µ
1.5
s
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
M
ou
nt
ed
on
op
ac
era
tio
n
er
am
ic
bo
ar
d
(2
5
0.01
0.1
Ta=25
°
C
Single Pulse
For PNP minus sign is omitted.
Mounted on a ceramic board (250mm
2
✕0.8mm)
2
3
5
7 1.0
2
3
5
7 10
2
3
5
0m
m
2
✕
0.
8m
m
)
20
40
60
80
100
120
140
160
Collector-to-Emitter Voltage, VCE -- V
IT11992
Ambient Temperature, Ta --
°C
ITR09585
No.3129-3/4
2SB1323 / 2SD1997
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of February, 2007. Specifications and information herein are subject
to change without notice.
PS No.3129-4/4
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