BAS28
High-speed double diode
Rev. 3 — 22 July 2010
Product data sheet
1. Product profile
1.1 General description
Two high-speed switching diodes fabricated in planar technology, and encapsulated in a
small SOT143B Surface-Mounted Device (SMD) plastic package. The diodes are not
connected.
1.2 Features and benefits
High switching speed: t
rr
≤
4 ns
Reverse voltage: V
R
≤
75 V
Repetitive peak reverse voltage: V
RRM
≤
85 V
Repetitive peak forward current: I
FRM
≤
500 mA
AEC-Q101 qualified
Small SMD package
1.3 Applications
High-speed switching in e.g. surface-mounted circuits
1.4 Quick reference data
Table 1.
Symbol
Per diode
I
F
I
R
V
R
t
rr
[1]
[2]
Quick reference data
Parameter
forward current
reverse current
reverse voltage
reverse recovery time
[2]
Conditions
[1]
Min
-
-
-
-
Typ
-
-
-
-
Max
215
1
75
4
Unit
mA
μA
V
ns
V
R
= 75 V
Device mounted on an FR4 Printed-Circuit Board (PCB).
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA.
NXP Semiconductors
BAS28
High-speed double diode
2. Pinning information
Table 2.
Pin
1
2
3
4
Pinning
Description
cathode (diode 1)
cathode (diode 2)
anode (diode 2)
anode (diode 1)
1
2
1
2
006aab100
Simplified outline
4
3
Graphic symbol
4
3
3. Ordering information
Table 3.
Ordering information
Package
Name
BAS28
-
Description
plastic surface-mounted package; 4 leads
Version
SOT143B
Type number
4. Marking
Table 4.
BAS28
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
[1]
JT*
Type number
BAS28
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 22 July 2010
2 of 12
NXP Semiconductors
BAS28
High-speed double diode
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
V
RRM
V
R
I
F
I
FRM
I
FSM
repetitive peak
reverse voltage
reverse voltage
forward current
repetitive peak
forward current
non-repetitive peak
forward current
square wave
t
p
= 1
μs
t
p
= 1 ms
t
p
= 1 s
Per device
P
tot
T
j
T
stg
[1]
[2]
[3]
[3]
[1]
Parameter
Conditions
Min
-
-
-
-
Max
85
75
215
500
Unit
V
V
mA
mA
-
-
-
[1][2]
4
1
0.5
250
150
+150
A
A
A
mW
°C
°C
total power dissipation
junction temperature
storage temperature
Device mounted on an FR4 PCB.
One diode loaded.
T
j
= 25
°C
prior to surge.
T
amb
= 25
°C
-
-
−65
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
R
th(j-t)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to tie-point
Conditions
in free air
[1]
Min
-
-
Typ
-
-
Max
500
360
Unit
K/W
K/W
Per device; one diode loaded
Device mounted on an FR4 PCB.
BAS28
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 22 July 2010
3 of 12
NXP Semiconductors
BAS28
High-speed double diode
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
F
forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
I
R
reverse current
V
R
= 25 V
V
R
= 75 V
V
R
= 25 V; T
j
= 150
°C
V
R
= 75 V; T
j
= 150
°C
C
d
t
rr
V
FR
[1]
[2]
Parameter
Conditions
Min
-
-
-
-
-
-
-
-
-
[1]
[2]
Typ
-
-
-
-
-
-
-
-
-
-
-
Max
715
855
1
1.25
30
1
30
50
1.5
4
1.75
Unit
mV
mV
V
V
nA
μA
μA
μA
pF
ns
V
diode capacitance
reverse recovery time
forward recovery voltage
f = 1 MHz; V
R
= 0 V
-
-
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA.
When switched from I
F
= 10 mA; t
r
= 20 ns.
300
I
F
(mA)
(1)
(2)
(3)
mbg382
10
2
I
FSM
(A)
10
mbg704
200
100
1
0
10
−1
0
1
V
F
(V)
2
1
10
10
2
10
3
t
p
(μs)
10
4
(1) T
j
= 150
°C;
typical values
(2) T
j
= 25
°C;
typical values
(3) T
j
= 25
°C;
maximum values
Based on square wave currents.
T
j
= 25
°C;
prior to surge
Fig 1.
Forward current as a function of forward
voltage
Fig 2.
Non-repetitive peak forward current as a
function of pulse duration; maximum values
BAS28
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 22 July 2010
4 of 12
NXP Semiconductors
BAS28
High-speed double diode
10
5
mga884
0.8
C
d
(pF)
mbg446
I
R
(nA)
10
4
(1)
0.6
10
3
(2)
0.4
(3)
10
2
0.2
10
0
0
100
T
j
(
°C
)
200
0
4
8
12
V
R
(V)
16
V
R
= V
Rmax
(1) V
R
= 75 V; maximum values
(2) V
R
= 75 V; typical values
(3) V
R
= 25 V; typical values
f = 1 MHz; T
j
= 25
°C
Fig 3.
Reverse current as a function of junction
temperature
250
I
F
(mA)
200
Fig 4.
Diode capacitance as a function of reverse
voltage; typical values
msa562
150
100
50
0
0
50
100
150
200
T
amb
(°C)
Fig 5.
Forward current as a function of ambient temperature; derating curve
BAS28
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 22 July 2010
5 of 12
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