DISCRETE SEMICONDUCTORS
DATA SHEET
BAS416
Low-leakage diode
Product data sheet
Supersedes data of 2002 Nov 19
2004 Jan 26
NXP Semiconductors
Product data sheet
Low-leakage diode
FEATURES
•
Plastic SMD package
•
Low leakage current: typ. 3 pA
•
Switching time: typ. 0.8
µs
•
Continuous reverse voltage: max. 75 V
•
Repetitive peak reverse voltage: max. 85 V
•
Repetitive peak forward current: max. 500 mA.
APPLICATIONS
•
Low-leakage current applications in surface mounted
circuits.
Marking code:
D4.
handbook, halfpage
BAS416
PINNING
PIN
1
2
DESCRIPTION
cathode
anode
1
2
MAM406
DESCRIPTION
Epitaxial, medium-speed switching diode with a low
leakage current encapsulated in a small SOD323 SMD
plastic package.
ORDERING INFORMATION
TYPE
NUMBER
BAS416
The marking bar indicates the cathode.
Fig.1
Simplified outline (SOD323) (SC-76) and
symbol.
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 2 leads
VERSION
SOD323
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
RRM
V
R
I
F
I
FRM
I
FSM
PARAMETER
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
square wave; T
j
= 25
°C
prior to
surge; see Fig.4
t = 1
µs
t = 1 ms
t=1s
P
tot
T
stg
T
j
Note
1. Device mounted on an FR4 printed-circuit board.
total power dissipation
storage temperature
junction temperature
T
amb
= 25
°C;
note 1
−
−
−
−
−65
−
4
1
0.5
250
+150
150
A
A
A
mW
°C
°C
see Fig.2
CONDITIONS
−
−
−
−
MIN.
MAX.
85
75
200
500
V
V
mA
mA
UNIT
2004 Jan 26
2
NXP Semiconductors
Product data sheet
Low-leakage diode
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
see Fig.3
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
I
R
reverse current
see Fig.5
V
R
= 75 V
V
R
= 75 V; T
j
= 150
°C
C
d
t
rr
diode capacitance
reverse recovery time
V
R
= 0; f = 1 MHz; see Fig.6
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA; see Fig.7
0.003
3
2
0.8
5
80
−
3
−
−
−
−
0.9
1
1.1
1.25
CONDITIONS
TYP.
BAS416
MAX.
V
V
V
V
UNIT
nA
nA
pF
µs
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Refer to SOD323 (SC-76) standard mounting conditions.
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
450
UNIT
K/W
2004 Jan 26
3
NXP Semiconductors
Product data sheet
Low-leakage diode
GRAPHICAL DATA
MHC323
BAS416
handbook, halfpage
300
handbook, halfpage
300
MLB752 - 1
IF
(mA)
IF
(mA)
200
(1)
(2)
(3)
200
100
100
0
0
100
Tamb (°C)
200
0
0
0.4
0.8
1.2
V F (V)
1.6
Device mounted on an FR4 printed-circuit board.
(1) T
j
= 150
°C;
typical values.
(2) T
j
= 25
°C;
typical values.
(3) T
j
= 25
°C;
maximum values.
Fig.2
Maximum permissible continuous
forward current as a function of
ambient temperature.
Fig.3
Forward current as a function of
forward voltage.
10
2
handbook, full pagewidth
IFSM
(A)
MBG704
10
1
10
−1
1
Based on square wave currents.
T
j
= 25
°C
prior to surge.
10
10
2
10
3
tp (µs)
10
4
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2004 Jan 26
4
NXP Semiconductors
Product data sheet
Low-leakage diode
BAS416
10
2
handbook, halfpage
IR
(nA)
MLB754
handbook, halfpage
2
MBG526
10
(1)
Cd
(pF)
1
1
10
1
10
2
(2)
10
3
0
0
50
100
150
T j (
o
C)
200
0
5
10
15
VR (V)
20
V
R
= 75 V.
(1) Maximum values.
(2) Typical values.
f = 1 MHz; T
j
= 25
°C.
Fig.5
Reverse current as a function of
junction temperature.
Fig.6
Diode capacitance as a function
of reverse voltage; typical values.
handbook, full pagewidth
tr
D.U.T.
10%
SAMPLING
OSCILLOSCOPE
R i = 50
Ω
VR
90%
tp
t
RS = 50
Ω
V = VR I F x R S
IF
IF
t rr
t
(1)
MGA881
input signal
output signal
(1) I
R
= 1 mA.
Input signal: reverse pulse rise time t
r
= 0.6 ns; reverse voltage pulse duration t
p
= 100 ns; duty factor
δ
= 0.05;
Oscilloscope: rise time t
r
= 0.35 ns.
Fig.7 Reverse recovery voltage test circuit and waveforms.
2004 Jan 26
5
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