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BAS16H/DG,115

Description
0.175 A, 100 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size143KB,20 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BAS16H/DG,115 Overview

0.175 A, 100 V, SILICON, SIGNAL DIODE

BAS16H/DG,115 Parametric

Parameter NameAttribute value
Number of terminals3
Number of components1
Processing package descriptionPLASTIC, SC-70, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingtin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Maximum power consumption limit0.2000 W
Diode typeSignal diode
Maximum reverse recovery time0.0040 us
Maximum repetitive peak reverse voltage100 V
Maximum average forward current0.1750 A
BAS16 series
High-speed switching diodes
Rev. 05 — 25 August 2008
Product data sheet
1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
Table 1.
Product overview
Package
NXP
BAS16
BAS16H
BAS16J
BAS16L
BAS16T
BAS16VV
BAS16VY
BAS16W
BAS316
BAS516
SOT23
SOD123F
SOD323F
SOD882
SOT416
SOT666
SOT363
SOT323
SOD323
SOD523
JEITA
-
-
SC-90
-
SC-75
-
SC-88
SC-70
SC-76
SC-79
JEDEC
TO-236AB
-
-
-
-
-
-
-
-
-
single
single
single
single
single
triple isolated
triple isolated
single
single
single
Configuration
Package
configuration
small
small and flat lead
very small and flat
lead
leadless ultra
small
ultra small
ultra small and flat
lead
very small
very small
very small
ultra small and flat
lead
Type number
1.2 Features
I
High switching speed: t
rr
4 ns
I
Low leakage current
I
Repetitive peak reverse voltage:
V
RRM
100 V
I
Low capacitance
I
Reverse voltage: V
R
100 V
I
Small SMD plastic packages
1.3 Applications
I
High-speed switching
I
General-purpose switching
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