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BAS29,215

Description
0.25 A, 110 V, SILICON, SIGNAL DIODE, TO-236AB
CategoryDiscrete semiconductor    diode   
File Size132KB,9 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BAS29,215 Overview

0.25 A, 110 V, SILICON, SIGNAL DIODE, TO-236AB

BAS29,215 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
Parts packaging codeTO-236
package instructionPLASTIC PACKAGE-3
Contacts3
Manufacturer packaging codeSOT23
Reach Compliance Codecompli
ECCN codeEAR99
Is SamacsysN
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.25 V
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current3 A
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.25 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.25 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage110 V
Maximum reverse current0.1 µA
Maximum reverse recovery time0.05 µs
surface mountYES
technologyAVALANCHE
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Base Number Matches1
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
BAS29; BAS31; BAS35
General purpose controlled
avalanche (double) diodes
Product data sheet
Supersedes data of 2001 Oct 10
2003 Mar 20

BAS29,215 Related Products

BAS29,215 BAS31,215 BAS31,235 BAS35,215
Description 0.25 A, 110 V, SILICON, SIGNAL DIODE, TO-236AB 0.25 A, 110 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB 0.25 A, 110 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB 0.25 A, 110 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB
Brand Name NXP Semiconduc NXP Semiconduc NXP Semiconduc NXP Semiconduc
Is it Rohs certified? conform to conform to conform to conform to
Parts packaging code TO-236 TO-236 TO-236 TO-236
package instruction PLASTIC PACKAGE-3 PLASTIC PACKAGE-3 PLASTIC PACKAGE-3 PLASTIC PACKAGE-3
Contacts 3 3 3 3
Manufacturer packaging code SOT23 SOT23 SOT23 SOT23
Reach Compliance Code compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99
Configuration SINGLE SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.25 V 1.25 V 1.25 V 1.25 V
JEDEC-95 code TO-236AB TO-236AB TO-236AB TO-236AB
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3 e3 e3
Humidity sensitivity level 1 1 1 1
Maximum non-repetitive peak forward current 3 A 3 A 3 A 3 A
Number of components 1 2 2 2
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Maximum output current 0.25 A 0.25 A 0.25 A 0.25 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260 260
Maximum power dissipation 0.25 W 0.25 W 0.25 W 0.25 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 110 V 110 V 110 V 110 V
Maximum reverse current 0.1 µA 0.1 µA 0.1 µA 0.1 µA
Maximum reverse recovery time 0.05 µs 0.05 µs 0.05 µs 0.05 µs
surface mount YES YES YES YES
technology AVALANCHE AVALANCHE AVALANCHE AVALANCHE
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 40 40 40 40
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