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BZT52H-C3V3,115

Description
3.3 V, 0.375 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
CategoryDiscrete semiconductor    diode   
File Size118KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

BZT52H-C3V3,115 Overview

3.3 V, 0.375 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

BZT52H-C3V3,115 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSOD-123
package instructionR-PDSO-F2
Contacts2
Manufacturer packaging codeSOD123F
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance500 Ω
JESD-30 codeR-PDSO-F2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.375 W
Certification statusNot Qualified
Nominal reference voltage3.3 V
surface mountYES
technologyZENER
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance6.06%
Working test current5 mA
BZT52H series
Single Zener diodes in a SOD123F package
Rev. 3 — 7 December 2010
Product data sheet
1. Product profile
1.1 General description
General-purpose Zener diodes in a SOD123F small and flat lead Surface-Mounted
Device (SMD) plastic package.
1.2 Features and benefits
Total power dissipation:
830 mW
Wide working voltage range: nominal
2.4 V to 75 V (E24 range)
Small plastic package suitable for
surface-mounted design
Low differential resistance
AEC-Q101 qualified
1.3 Applications
General regulation functions
1.4 Quick reference data
Table 1.
Symbol
V
F
P
tot
Quick reference data
Parameter
forward voltage
total power dissipation
Conditions
I
F
= 10 mA
T
amb
25
°C
[1]
[2]
[3]
Min
-
-
-
Typ
-
-
-
Max
0.9
375
830
Unit
V
mW
mW
[1]
[2]
[3]
Pulse test: t
p
300
μs; δ ≤
0.02.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Graphic symbol
1
2
1
2
006aaa152
[1]
The marking bar indicates the cathode.
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