DPE128X32V-12B datasheet, PDF - EEWORLD Datasheet

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DPE128X32V-12B: DescriptionEEPROM Module, 512KX8, 120ns, Parallel, CMOS, CPGA66, PGA-66; Categorystorage storage; File Size586KB，6 Pages; ManufacturerB&B Electronics Manufacturing Company

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DPE128X32V-12B Overview

EEPROM Module, 512KX8, 120ns, Parallel, CMOS, CPGA66, PGA-66

DPE128X32V-12B Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	B&B Electronics Manufacturing Company
Parts packaging code	PGA
package instruction	PGA, PGA66,11X11
Contacts	66
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Maximum access time	120 ns
Other features	CONFIGURABLE AS 128K X 32
Spare memory width	16
Data polling	YES
JESD-30 code	S-CPGA-P66
JESD-609 code	e0
length	27.686 mm
memory density	4194304 bit
Memory IC Type	EEPROM MODULE
memory width	8
Number of functions	1
Number of terminals	66
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	512KX8
Output characteristics	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	PGA
Encapsulate equivalent code	PGA66,11X11
Package shape	SQUARE
Package form	GRID ARRAY
page size	128 words
Parallel/Serial	PARALLEL
power supply	5 V
Programming voltage	5 V
Certification status	Not Qualified
Filter level	MIL-STD-883 Class B
Maximum seat height	7.62 mm
Maximum standby current	0.0012 A
Maximum slew rate	0.32 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal pitch	2.54 mm
Terminal location	PERPENDICULAR
switch bit	NO
width	27.686 mm
Maximum write cycle time (tWC)	10 ms

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4 Megabit CMOS EEPROM

DPE128X32V

DESCRIPTION:

The DPE128X32V is a high-performance Electrically Erasable

and Programmable Read Only Memory (EEPROM) module

and may be organized as 128K X 32, 256K X 16 or 512K X 8.

The module is built with four low-power CMOS 128K X 8

EEPROMs. The four chip enables are used for individual

BWDW* selection. The DPE128X32V is ideally suited for

those computer systems having 16-bit or 32-bit architectures.

The DPE128X32V contains a 128-BWDW page register to

allow writing of up to 128 BWDWs simultaneously. During

a write cycle, the address and 1 to 128 BWDWs of data are

internally latched, freeing the address and data bus for other

operations. Following the initiation of a write cycle, the

module will automatically write the latched data using an

internal control timer. The end of a write cycle can be

detected by DATA Polling of the most significant data bit in

each byte. Once the end of a write cycle has been detected,

a new access for a read or write can begin.

FUNCTIONAL BLOCK DIAGRAM

FEATURES:

•

Fast Access Times: 120, 150, 200, 250ns

Organizations Available:

128K X 32, 256K X 16 or 512K X 8

Automatic Page Write Operation

Internal Address and Data Latches

Internal Control Timer

Fast Write Cycle Times

Page Write Cycle Time: 10ms maximum

1 to 128 BWDW* Page Write Operation

DATA Polling for END of Write Detection

High Reliability CMOS Technology

Endurance: 10

Cycles

Data Retention: 10 years

Single +5V Power Supply,

±10%

Tolerance

CMOS and TTL Compatible Inputs and Outputs

Available with All Semiconductor Components

used to Construct the Module Compliant to

MIL-STD-883; Class B

66-Pin PGA (Grid Array) Package

Same Package as other Versapac Versions

(SRAMs, EPROMs, and Mixed)

PIN NAMES

A0 - A16

I/O0 - I/O31

CE0 - CE3

WE0 - WE3

N.C.

Address Inputs

Data In/Out

Chip Enables

Write Enables

Output Enable

Power (+5V)

Ground

No Connect

* Byte, Word or Double Word (BWDW).

PIN-OUT DIAGRAM

30A014-25

REV. D

This document contains information on a product that is currently released

to production at Dense-Pac Microsystems, Inc. Dense-Pac reserves the

right to change products or specifications herein without prior notice.

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