TPC8401
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U−MOSII)
TPC8401
Lithium Ion Secondary Battery Applications
Portable Equipment Applications
Notebook PCs
Low drain−source ON resistance
: P Channel R
DS (ON)
= 27 mΩ (typ.)
N Channel R
DS (ON)
=
14
mΩ (typ.)
High forward transfer admittance
: P Channel |Y
fs
| = 7 S (typ.)
N Channel |Y
fs
| = 8 S (typ.)
Low leakage current
: P Channel I
DSS
=
−10
µA (V
DS
=
−30
V)
N Channel I
DSS
=
10
µA (V
DS
= 30 V)
Enhancement−mode
: P Channel V
th
=
−0.8~ −2.0
V (V
DS
=
−10
V, I
D
=
−1mA)
N Channel V
th
= 0.8~2.5 V (V
DS
=
10
V, I
D
=
1mA)
Unit: mm
Maximum Ratings
(Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D (1)
P
D (2)
P
D (1)
P
D (2)
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
P Channel N Channel
−30
−30
±20
−4.5
−18
1.5
1.0
0.75
0.45
26.3
(Note 4a)
−4.5
0.10
150
−55~150
30
30
±20
6
24
1.5
1.0
W
0.75
0.45
46.8
(Note 4b)
6
mJ
A
mJ
°C
°C
Unit
JEDEC
V
V
V
A
―
―
2-6J1E
JEITA
TOSHIBA
Weight: 0.080 g (typ.)
Drain power Single-device operation
(Note 3a)
dissipation
(t = 10s)
Single-device value at
(Note 2a) dual operation (Note 3b)
Drain power Single-device operation
(Note 3a)
dissipation
(t = 10s)
Single-device value at
(Note 2b) dual operation (Note 3b)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Single-device value at operation
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
Circuit Configuration
Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4a), (Note 4b) and (Note 5), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2002-05-17
TPC8401
Thermal Characteristics
Characteristics
Single-device operation
(Note 3a)
Symbol
R
th (ch-a) (1)
R
th (ch-a) (2)
R
th (ch-a) (1)
R
th (ch-a) (2)
Max
83.3
Unit
Thermal resistance, channel to ambient
(t = 10s)
(Note 2a) Single-device value at
dual operation
(Note 3b)
Single-device operation
(Note 3a)
125
°C/W
167
Thermal resistance, channel to ambient
(t = 10s)
(Note 2b) Single-device value at
dual operation
(Note 3b)
278
Marking
TPC8401
*
Type
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2:
a) Device mounted on a glass-epoxy board (a)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
(a)
(b)
Note 3:
a) The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.)
b) The power dissipation and thermal resistance values are shown for a single device
(During dual operation, power is evenly applied to both devices.)
Note 4:
a) V
DD
=
−24
V, T
ch
= 25°C (Initial), L = 1.0 mH, R
G
= 25
Ω,
I
AR
=
−4.5
A
b) V
DD
= 24 V, T
ch
= 25°C (Initial), L = 1.0 mH, R
G
= 25
Ω,
I
AR
= 6.0 A
Note 5: Repetitive rating: pulse width limited by maximum channel temperature
Note 6:
•
on lower left of the marking indicates Pin 1.
*
shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of
manufacture: January to December are denoted by letters A to L respectively.)
2
2002-05-17
TPC8401
P-ch
Electrical Characteristics
(Ta = 25°C)
Characteristics
Gate leakage current
Drain cut−OFF current
Drain−source breakdown
voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn−ON time
Switching time
Fall time
t
f
t
off
Q
g
Q
gs1
Q
gd
V
DD
≈ −24
V, V
GS
=
−10
V, I
D
=
−4.5
A
—
75
—
Symbol
I
GSS
I
DSS
V
(BR) DSS
V
(BR) DSX
V
th
R
DS (ON)
R
DS (ON)
|Y
fs
|
C
iss
C
rss
C
oss
t
r
t
on
V
DS
=
−10
V, V
GS
= 0 V, f = 1 MHz
Test Condition
V
GS
= ±16 V, V
DS
= 0 V
V
DS
=
−30
V, V
GS
= 0 V
I
D
=
−10
mA, V
GS
= 0 V
I
D
=
−10
mA, V
GS
= 20 V
V
DS
=
−10
V, I
D
=
−1
mA
V
GS
=
−4
V, I
D
=
−2.2
A
V
GS
=
−10
V, I
D
=
−2.2
A
V
DS
=
−10
V, I
D
=
−2.2
A
Min
—
—
−30
−15
−0.8
—
—
3.5
—
—
—
—
—
Typ.
—
—
—
—
—
51
25
7
970
180
370
17
20
Max
±10
−10
—
—
−2.0
65
35
—
—
—
—
—
—
ns
pF
Unit
µA
µA
V
V
mΩ
S
Turn−OFF time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge 1
Gate−drain (“miller”) charge
—
—
—
—
160
28
6
12
—
—
—
—
nC
Source−Drain Ratings and Characteristics
(Ta = 25°C)
Characteristics
Drain reverse
current
Pulse (Note 1)
Symbol
I
DRP
V
DSF
Test Condition
—
I
DR
=
−4.5
A, V
GS
= 0 V
Min
—
—
Typ.
—
—
Max
−18
1.2
Unit
A
V
Forward voltage (diode)
3
2002-05-17
TPC8401
N-ch
Electrical Characteristics
(Ta = 25°C)
Characteristics
Gate leakage current
Drain cut−OFF current
Drain−source breakdown
voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
I
GSS
I
DSS
V
(BR) DSS
V
(BR) DSX
V
th
R
DS (ON)
R
DS (ON)
|Y
fs
|
C
iss
C
rss
C
oss
t
r
t
on
t
f
t
off
Q
g
Q
gs1
Q
gd
V
DD
≈
24 V, V
GS
= 10 V, I
D
= 6 A
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
Test Condition
V
GS
= ±16 V, V
DS
= 0 V
V
DS
= 30 V, V
GS
= 0 V
I
D
= 10 mA, V
GS
= 0 V
I
D
= 10 mA, V
GS
=
−20
V
V
DS
= 10 V, I
D
= 1 mA
V
GS
= 4 V, I
D
= 3 A
V
GS
= 10 V, I
D
= 3 A
V
DS
= 10 V, I
D
= 3 A
Min
―
―
30
15
0.8
―
―
4
―
―
―
―
Typ.
―
―
―
―
―
21
14
8
1700
260
380
10
Max
±10
10
―
―
2.5
32
21
―
―
―
―
―
pF
Unit
µA
µA
V
V
mΩ
S
Turn−ON time
Switching time
Fall time
―
20
―
ns
―
35
―
Turn−OFF time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge 1
Gate−drain (“miller”) charge
―
―
―
―
120
40
28
12
―
―
―
―
nC
Source−Drain Ratings and Characteristics
(Ta = 25°C)
Characteristics
Drain reverse
current
Pulse (Note 1)
Symbol
I
DRP
V
DSF
I
DR
= 6 A, V
GS
= 0 V
Test Condition
—
Min
—
—
Typ.
—
—
Max
24
−1.2
Unit
A
V
Forward voltage (diode)
4
2002-05-17
TPC8401
P-ch
P
D
– Ta
(W)
2.0
DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a)
(NOTE 2a)
(1) SINGLE-DEVICE OPERATION (NOTE 3a)
(2) SINGLE-DEVICE VALUE AT DUAL OPERATION
(NOTE 3b)
DEVICE MOUNTED ON A GLASS-EPOXY
BOARD (b)
(NOTE 2b)
(3) SINGLE-DEVICE OPERATION
(NOTE 3a)
(4) SINGLE-DEVICE VALUE AT DUAL
OPERATION
(NOTE 3b)
t
=
10 s
DRAIN POWER DISSIPATION P
D
1.5
(1)
(2)
1.0
(3)
0.5
(4)
0
0
50
100
150
200
AMBIENT TEMPERATURE Ta (
°
C)
5
2002-05-17
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