TO
-2
20A
C
BYW29E-200
Ultrafast power diode
Rev. 5 — 20 March 2012
Product data sheet
1. Product profile
1.1 General description
Ultrafast power diode in a SOD59 (2-lead TO-220AC) plastic package.
1.2 Features and benefits
Fast switching
Guaranteed ESD capability
High thermal cycling performance
Low on-state loss
Low thermal resistance
Rugged: reverse voltage surge
capability
Soft recovery minimizes
power-consuming oscillations
1.3 Applications
Output rectifiers in high-frequency
switched-mode power supplies
1.4 Quick reference data
Table 1.
Symbol
V
RRM
I
F(AV)
Quick reference data
Parameter
repetitive peak reverse
voltage
average forward current
square-wave pulse;
δ
= 0.5 ;
T
mb
≤
128 °C; see
Figure 1;
see
Figure 2
I
F
= 8 A; T
j
= 150 °C; see
Figure 4
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/s;
T
j
= 25 °C; ramp recovery; see
Figure 5;
see
Figure 7
HBM; C = 250 pF; R = 1.5 kΩ
Conditions
Min
-
-
Typ
-
-
Max
200
8
Unit
V
A
Static characteristics
V
F
t
rr
forward voltage
reverse recovery time
-
-
0.8
20
0.895
25
V
ns
Dynamic characteristics
Electrostatic discharge
V
ESD
electrostatic discharge
voltage
-
-
8
kV
NXP Semiconductors
BYW29E-200
Ultrafast power diode
2. Pinning information
Table 2.
Pin
1
2
mb
Pinning information
Symbol Description
K
A
mb
cathode
anode
mounting base; cathode
mb
K
A
001aaa020
Simplified outline
Graphic symbol
1
2
SOD59 (TO-220AC)
3. Ordering information
Table 3.
Ordering information
Package
Name
BYW29E-200
TO-220AC
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 2-lead TO-220AC
Version
SOD59
Type number
4. Limiting values
Table 4.
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
I
RRM
I
RSM
T
stg
T
j
V
ESD
Limiting values
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average forward current
repetitive peak forward current
non-repetitive peak forward
current
repetitive peak reverse current
non-repetitive peak reverse
current
storage temperature
junction temperature
electrostatic discharge voltage
HBM; C = 250 pF; R = 1.5 kΩ
square-wave pulse;
δ
= 0.5 ; T
mb
≤
128 °C;
see
Figure 1;
see
Figure 2
square-wave pulse;
δ
= 0.5 ; t
p
= 25 µs;
T
mb
≤
128 °C
t
p
= 8.3 ms; sine-wave pulse; T
j(init)
= 25 °C
t
p
= 10 ms; sine-wave pulse; T
j(init)
= 25 °C
δ
= 0.001 ; t
p
= 2 µs
t
p
= 100 µs
Conditions
Min
-
-
-
-
-
-
-
-
-
-40
-
-
Max
200
200
200
8
16
88
80
0.2
0.2
150
150
8
Unit
V
V
V
A
A
A
A
A
A
°C
°C
kV
In accordance with the Absolute Maximum Rating System (IEC 60134).
Electrostatic discharge
BYW29E-200
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 5 — 20 March 2012
2 of 11
NXP Semiconductors
BYW29E-200
Ultrafast power diode
12
P
tot
(W)
8
0.2
0.1
4
0.5
003aaj507
8
P
tot
(W)
6
2.8
4.0
2.2
003aaj508
δ=1
a = 1.57
1.9
4
2
0
0
4
8
I
F(AV)
(A)
12
0
0
2
4
6
I
F(AV)
(A)
8
Fig 1.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 2.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
BYW29E-200
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 5 — 20 March 2012
3 of 11
NXP Semiconductors
BYW29E-200
Ultrafast power diode
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
Conditions
see
Figure 3
in free air
Min
-
-
Typ
-
60
Max
2.7
-
Unit
K/W
K/W
10
Z
th(j-mb)
(K/W)
1
003aaj513
10
-1
t
p
T
P
δ=
10
-2
t
p
t
T
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
10
Fig 3.
Transient thermal impedance from junction to mounting base as a function of pulse width
BYW29E-200
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 5 — 20 March 2012
4 of 11
NXP Semiconductors
BYW29E-200
Ultrafast power diode
6. Characteristics
Table 6.
Symbol
V
F
Characteristics
Parameter
forward voltage
Conditions
I
F
= 8 A; T
j
= 25 °C; see
Figure 4
I
F
= 20 A; T
j
= 25 °C; see
Figure 4
I
F
= 8 A; T
j
= 150 °C; see
Figure 4
I
R
reverse current
V
R
= 200 V; T
j
= 25 °C
V
R
= 200 V; T
j
= 100 °C
Dynamic characteristics
Q
r
t
rr
recovered charge
reverse recovery time
I
F
= 2 A; V
R
= 30 V; dI
F
/dt = 20 A/s;
T
j
= 25 °C; see
Figure 5;
see
Figure 6
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/s;
ramp recovery; T
j
= 25 °C; see
Figure 5;
see
Figure 7
I
F
= 0.5 A; I
R
= 1 A; step recovery;
I
R(meas)
= 0.25 A; T
j
= 25 °C; see
Figure 8
V
FRM
forward recovery voltage
I
F
= 1 A; dI
F
/dt = 10 A/s; T
j
= 25 °C;
see
Figure 9
-
-
4
20
11
25
nC
ns
Min
-
-
-
-
-
Typ
0.92
1.1
0.8
2
0.2
Max
1.05
1.3
0.895
10
0.6
Unit
V
V
V
µA
mA
Static characteristics
-
-
15
1
20
-
ns
V
30
I
F
(A)
003aaj509
I
F
dl
F
dt
t
rr
20
time
(1)
(2)
(3)
25 %
Q
r
100 %
10
I
R
0
I
RM
003aac562
0
0.5
1
1.5
V
F
(V)
2
Fig 4.
Forward current as a function of forward
voltage
Fig 5.
Reverse recovery definitions; ramp recovery
BYW29E-200
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 5 — 20 March 2012
5 of 11
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