BYV32E-200
Dual rugged ultrafast rectifier diode, 20 A, 200 V
Rev. 04 — 27 February 2009
Product data sheet
1. Product profile
1.1 General description
Ultrafast dual epitaxial rectifier diode in a SOT78 (TO-220AB) plastic package.
1.2 Features and benefits
High reverse voltage surge capability
High thermal cycling performance
Low thermal resistance
Soft recovery characteristic minimizes
power consuming oscillations
Very low on-state loss
1.3 Applications
Output rectifiers in high-frequency
switched-mode power supplies
1.4 Quick reference data
Table 1.
V
RRM
I
O(AV)
Quick reference
Conditions
Min
-
square-wave pulse;
δ
= 0.5;
T
mb
≤
115 °C; both diodes
conducting; see
Figure 1;
see
Figure 2
t
p
= 2 µs;
δ
= 0.001
HBM; C = 250 pF; R = 1.5
kΩ; all pins
I
F
= 1 A; V
R
= 30 V;
dI
F
/dt = 100 A/µs;
T
j
= 25 °C; ramp recovery;
see
Figure 5
I
R
= 1 A; I
F
= 0.5 A;
T
j
= 25 °C; step recovery;
measured at reverse current
= 0.25 A; see
Figure 6
Static characteristics
V
F
forward voltage
I
F
= 8 A; T
j
= 150 °C; see
Figure 4
-
0.72
0.85
V
-
Typ
-
-
Max
200
20
Unit
V
A
repetitive peak
reverse voltage
average output
current
Symbol Parameter
I
RRM
V
ESD
repetitive peak
reverse current
electrostatic
discharge voltage
reverse recovery
time
-
-
-
-
0.2
8
A
kV
Dynamic characteristics
t
rr
-
20
25
ns
-
10
20
ns
NXP Semiconductors
BYV32E-200
Dual rugged ultrafast rectifier diode, 20 A, 200 V
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol
A1
K
A2
K
Description
anode 1
cathode
anode 2
mounting base; cathode
mb
A1
K
sym125
Simplified outline
Graphic symbol
A2
1 2 3
SOT78
(TO-220AB; SC-46)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BYV32E-200
TO-220AB;
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78
SC-46
TO-220AB
BYV32E-200_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 27 February 2009
2 of 9
NXP Semiconductors
BYV32E-200
Dual rugged ultrafast rectifier diode, 20 A, 200 V
4. Limiting values
Table 4.
Symbol
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
Limiting values
Parameter
repetitive peak reverse
voltage
crest working reverse
voltage
reverse voltage
average output current
repetitive peak forward
current
non-repetitive peak
forward current
DC
square-wave pulse;
δ
= 0.5; T
mb
≤
115 °C; both
diodes conducting; see
Figure 1;
see
Figure 2
δ
= 0.5; t
p
= 25 µs; T
mb
≤
115 °C; per diode
t
p
= 8.3 ms; sine-wave pulse; T
j(init)
= 25 °C; per
diode
t
p
= 10 ms; sine-wave pulse; T
j(init)
= 25 °C; per
diode
I
RRM
I
RSM
T
stg
T
j
V
ESD
repetitive peak reverse
current
non-repetitive peak
reverse current
storage temperature
junction temperature
electrostatic discharge
voltage
HBM; C = 250 pF; R = 1.5 kΩ; all pins
δ
= 0.001; t
p
= 2 µs
t
p
= 100 µs
Conditions
Min
-
-
-
-
-
-
-
-
-
-40
-
-
Max
200
200
200
20
20
137
125
0.2
0.2
150
150
8
Unit
V
V
V
A
A
A
A
A
A
°C
°C
kV
In accordance with the Absolute Maximum Rating System (IEC 60134).
12
P
tot
(W)
1.9
2.2
a = 1.57
003aac978
15
P
tot
(W)
0.5
003aac979
δ
=1
8
4.0
2.8
10
0.2
0.1
4
5
0
0
4
8
I
F(AV)
(A)
12
0
0
5
10
I
F(AV)
(A)
15
Fig 1.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
Fig 2.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
BYV32E-200_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 27 February 2009
3 of 9
NXP Semiconductors
BYV32E-200
Dual rugged ultrafast rectifier diode, 20 A, 200 V
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
Conditions
Min
-
-
-
Typ
-
-
60
Max
1.6
2.4
-
Unit
K/W
K/W
K/W
thermal resistance from with heatsink compound; both diodes
junction to mounting
conducting
base
with heatsink compound; per diode; see
Figure 3
thermal resistance from
junction to ambient
R
th(j-a)
10
Z
th(j-mb)
(K/W)
1
003aac980
10
−1
P
δ
=
t
p
T
10
−2
t
p
t
T
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
t
p
(s)
Fig 3.
Transient thermal impedance from junction to mounting base as a function of pulse width
6. Characteristics
Table 6.
Symbol
V
F
I
R
Characteristics
Parameter
forward voltage
reverse current
Conditions
I
F
= 20 A; T
j
= 25 °C
I
F
= 8 A; T
j
= 150 °C; see
Figure 4
V
R
= 200 V; T
j
= 100 °C
V
R
= 200 V; T
j
= 25 °C
Dynamic characteristics
Q
r
t
rr
recovered charge
reverse recovery time
I
F
= 2 A; V
R
= 30 V; dI
F
/dt = 20 A/µs;
T
j
= 25 °C
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/µs;
ramp recovery; T
j
= 25 °C; see
Figure 5
I
F
= 0.5 A; I
R
= 1 A; step recovery;
measured at reverse current = 0.25 A;
T
j
= 25 °C; see
Figure 6
V
FR
forward recovery
voltage
I
F
= 1 A; dI
F
/dt = 10 A/µs; T
j
= 25 °C; see
Figure 7
-
-
-
8
20
10
12.5
25
20
nC
ns
ns
Min
-
-
-
-
Typ
1
0.72
0.2
6
Max
1.15
0.85
0.6
30
Unit
V
V
mA
µA
Static characteristics
-
-
1
V
BYV32E-200_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 27 February 2009
4 of 9
NXP Semiconductors
BYV32E-200
Dual rugged ultrafast rectifier diode, 20 A, 200 V
32
I
F
(A)
24
003aac981
I
F
dl
F
dt
t
rr
16
(1)
(2)
(3)
time
25 %
Q
r
100 %
8
I
R
0
0
0.4
0.8
1.2
V
F
(V)
1.6
I
RM
003aac562
Fig 5.
Reverse recovery definitions; ramp recovery
Fig 4.
Forward current as a function of forward
voltage
I
F
I
F
I
F
t
rr
time
0.25 x I
R
Q
r
V
F
time
V
FRM
I
R
I
R
003aac563
V
F
time
Fig 6.
Reverse recovery definitions; step recovery
Fig 7.
Forward recovery definitions
001aab912
BYV32E-200_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 27 February 2009
5 of 9
京公网安备 11010802033920号
EEWORLD
