BYQ30E-200
Dual ultrafast power diode
Rev. 4 — 1 September 2010
Product data sheet
1. Product profile
1.1 General description
Dual ultrafast power diode in a SOT78 (TO-220AB) plastic package
1.2 Features and benefits
Fast switching
High thermal cycling performance
Low forward volt drop
Low thermal resistance
Reverse surge capability
Soft recovery characteristic
1.3 Applications
Output rectifiers in high-frequency
switched-mode power supplies
1.4 Quick reference data
Table 1.
Symbol
V
RRM
I
O(AV)
Quick reference data
Parameter
repetitive peak
reverse voltage
average output
current
squire-wave pulse;
δ
= 0.5 ;
T
mb
≤
104 °C; both diodes
conducting;
see
Figure 1;
see
Figure 2
I
F
= 8 A; T
j
= 150 °C;
see
Figure 4
I
R
= 1 A; I
F
= 0.5 A;
I
R(meas)
= 0.25 A; T
j
= 25 °C;
step recovery; see
Figure 6
Conditions
Min
-
-
Typ
-
-
Max Unit
200
16
V
A
Static characteristics
V
F
forward voltage
-
0.84 0.95 V
Dynamic characteristics
t
rr
reverse recovery
time
-
12
22
ns
NXP Semiconductors
BYQ30E-200
Dual ultrafast power diode
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
A1
K
A2
K
anode 1
cathode
anode 2
mounting base; cathode
mb
A1
K
sym125
Simplified outline
Graphic symbol
A2
1 2 3
SOT78 (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Package
Name
BYQ30E-200
BYQ30E-200/H
TO-220AB
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
SOT78
Type number
BYQ30E-200
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2010
2 of 11
NXP Semiconductors
BYQ30E-200
Dual ultrafast power diode
4. Limiting values
Table 4.
Symbol
V
RRM
V
RWM
V
R
I
O(AV)
Limiting values
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average output current
DC
squire-wave pulse;
δ
= 0.5 ;
T
mb
≤
104 °C; both diodes conducting;
see
Figure 1;
see
Figure 2
squire-wave pulse;
δ
= 0.5 ; t
p
= 25 µs;
T
mb
≤
104 °C; per diode
t
p
= 10 ms; sine-wave pulse;
T
j(init)
= 25 °C; per diode
t
p
= 8.3 ms; sine-wave pulse;
T
j(init)
= 25 °C; per diode
I
RRM
I
RSM
T
stg
T
j
V
ESD
repetitive peak reverse current
non-repetitive peak reverse
current
storage temperature
junction temperature
electrostatic discharge voltage
HBM; all pins; C = 250 pF; R = 1.5 kΩ
δ
= 0.001 ; t
p
= 2
μs
t
p
= 100
μs
Conditions
Min
-
-
-
-
Max
200
200
200
16
Unit
V
V
V
A
In accordance with the Absolute Maximum Rating System (IEC 60134).
I
FRM
I
FSM
repetitive peak forward current
non-repetitive peak forward
current
-
-
-
-
-
-40
-
-
16
80
88
0.2
0.2
150
150
8
A
A
A
A
A
°C
°C
kV
12
P
tot
(W)
8
0.2
003aae838
12
P
tot
(W)
8
2.8
1.9
2.2
4
003aae839
δ
= 1.0
0.5
a = 1.57
0.1
4
4
0
0
4
8
I
F(AV)
(A)
12
0
0
2
4
6
I
F(AV)
(A)
8
Fig 1.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 2.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
BYQ30E-200
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2010
3 of 11
NXP Semiconductors
BYQ30E-200
Dual ultrafast power diode
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
with heatsink compound; both diodes
conducting; see
Figure 3
with heatsink compound; per diode;
see
Figure 3
Min
-
-
-
Typ
-
-
60
Max
2.5
3
-
Unit
K/W
K/W
K/W
R
th(j-a)
10
Z
th(j-mb)
(K/W)
1
per diode
both diodes
10
−1
003aae840
10
−2
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
10
Fig 3.
Transient thermal impedance from junction to mounting base as a function of pulse width
BYQ30E-200
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2010
4 of 11
NXP Semiconductors
BYQ30E-200
Dual ultrafast power diode
6. Characteristics
Table 6.
Symbol
V
F
Characteristics
Parameter
forward voltage
Conditions
I
F
= 16 A; T
j
= 25 °C; see
Figure 4
I
F
= 16 A; T
j
= 150 °C; see
Figure 4
I
F
= 8 A; T
j
= 150 °C; see
Figure 4
I
R
reverse current
V
R
= 200 V; T
j
= 100 °C
V
R
= 200 V; T
j
= 25 °C
Dynamic characteristics
Q
r
t
rr
recovered charge
reverse recovery time
I
F
= 2 A; V
R
≥
30 V; dI
F
/dt = 20 A/s;
T
j
= 25 °C; see
Figure 5
I
F
= 1 A; V
R
≥
30 V; dI
F
/dt = 100 A/µs;
ramp recovery; T
j
= 25 °C;see
Figure 5
I
F
= 0.5 A; I
R
= 1 A; step recovery;
I
R(meas)
= 0.25 A; T
j
= 25 °C;
see
Figure 6
V
FR
forward recovery
voltage
I
F
= 1 A; dI
F
/dt = 10 A/µs; T
j
= 25 °C;
see
Figure 7
-
-
-
4
20
12
11
25
22
nC
ns
ns
Min
-
-
-
-
-
Typ
1.12
1
0.84
0.3
4
Max
1.25
1.15
0.95
0.6
30
Unit
V
V
V
mA
µA
Static characteristics
-
1
-
V
20
I
F
(A)
15
003aae841
I
F
dl
F
dt
t
rr
10
time
10 %
5
(1)
(2)
(3)
Q
r
100 %
0
0
0.5
1
1.5
V
F
(V)
2
I
R
I
RM
001aab911
(1) Tj = 150 °C; typical values
(2) Tj = 150 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig 4.
Forward current as a function of forward
voltage
Fig 5.
Forward recovery definitions
BYQ30E-200
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2010
5 of 11
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