RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
BAS86
SCHOTTKY DIODES
FEATURES
* Fast Switching Device(T
RR
<4.0nS)
* Mini MELF Glass Case (SOD-80)
* Through-Hole Device Type Mounting
* Hermetically Sealed Glass
* Compression Bonded Construction
* All external surfaces are corrosion resistant and leads
are readily solderable
SOD-80
.016(0.40)
.008(0.20)
∅
.059(1.5)
∅
.055(1.4)
.142(3.6)
.134(3.4)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
MAXIMUM RATINGES
( @ T
A
= 25 C unless otherwise noted )
RATINGS
Maximum Forward Comtinuous Reverse Voltage
Maximum Forward Comtinuous Current @ T A =25 C
Maximum Peak Forward Current tp<1s
Surge Forward Current @ tp=10ms
Maximum Power Dissipation @ T A =65 C
Junction Temperature
Storage Temperature Range
O
O
o
SYMBOL
V
R
I
F
I
FM
I
FSM
P
D
T
J
T
STG
BAS86
50
200
500
5
200
125
-65 to + 150
UNITS
V
mAmps
mAmps
Amps
mW
O
C
C
O
ELECTRICAL CHARACTERISTICS
( @ T
A
= 25
o
C unless otherwise noted )
CHARACTERISTICS
Reverse voltage leakage current (V
R
=40V)
(I
F
=0.1mA)
(I
F
=1mA)
Forward voltage Pulse Tesx tp<300µs,δ<2%
(I
F
=10mA)
(I
F
=30mA)
(I
F
=100mA)
Diode capacitance (V
R
=1,f=1MHz)
C
D
-
V
F
-
SYMBOL
I
R
MIN.
-
TYP.
-
-
-
-
-
-
-
MAX.
5
0.30
0.38
0.45
0.60
0.90
8
pF
2006-3
V
UNITS
µA
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