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31DF6_15

Description
Fast Recovery Diode
File Size371KB,2 Pages
ManufacturerNI
Websitehttps://www.ni.com
Download Datasheet View All

31DF6_15 Overview

Fast Recovery Diode

3A Avg. 600Volts
31DF6
Fast Recovery Diode
外½寸法図
DSE-13050(1/2)
構造:拡散型シリコンダイオード(FRD),リード線型
Construction :Diffusion-type Silicon Diode,Axial Lead Type
OUTLINE DRAWING
Dimension : mm
Package : Axial 6
用途:高周波整流用
Application : High-Frequency Rectification
特長
½ノイズ
高耐圧
高速
trr=35ns
Feature
Low Noise
High Voltage
High Speed Recovery
trr=35ns
Weight
: 1.19g(typ.)
Flammability : Epoxy Resin=UL94V-0 Recognized
■ 絶対最大定格(表示無き場合
項目
Item
くり返しピーク逆電圧
Repetitive Peak Reverse Voltage
平均整流電流
Average Rectified Output Current
実効順電流
RMS Forward Current
サージ順電流
Surge Forward Current
動½接合温度範囲
Operation Junction Temperature Range
保存温度範囲
Storage Temperature Range
Ta=25℃)
Absolute Maximum Ratings (Ta = 25
o
C unless otherwise stated)
記号
Symbol
条件
Conditions
定格値
Rating
単½
Units
V
RRM
50Hz 正弦半波通電
抵抗負荷
Half Sine Wave,
Resistive Load
Ta=29℃
*1
600
1.2
V
I
O
T1=109℃
(T1:Lead Temperature)
A
3.0
4.71
45
-40½+150
-40½+150
A
A
I
F(RMS)
I
FSM
T
jw
T
stg
50Hz 正弦半波 1 サイクル 非繰り返し
50Hz half Sine Wave,1 cycle,Non-repetitive
■電気的・熱的特性
Electrical / Thermal Characteristics
項目
Item
ピーク逆電流
Peak Reverse Current
ピーク順電圧
Peak Forward Voltage
逆回復時間
Reverse Recovery Time
熱抵抗
Thermal Resistance
記号
Symbol
条件
Conditions
最小値
min.
代表値
typ.
最大値
max.
単½
Units
I
RM
V
FM
t
rr
Rth(j-a)
Rth(j-l)
V
RM
=V
RRM,
T
j
=25℃
I
FM
=3.0A,T
j
=25℃
I
FM
=3.0A,-di/dt=50A/µ
s,
T
j
=25℃
接合部・周囲間
Junction to Ambient
*1
接合部・リード間
Junction to Lead
-
-
-
-
20
1.7
35
µA
V
ns
℃/W
℃/W
-
-
-
-
80
8
*1 : 単½フィン無し/Without
Fin or P.C. Board
本資料の記載内容は½品改良などのため予告なく変更することがあります
Date of issue:2013.10.2
The content specified herein is subject to change without notice.
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