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BZV55-C18/N,115

Description
BZV55-C18
CategoryDiscrete semiconductor    diode   
File Size411KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BZV55-C18/N,115 Overview

BZV55-C18

BZV55-C18/N,115 Parametric

Parameter NameAttribute value
Source Url Status Check Date2013-10-15 00:00:00
Brand NameNXP Semiconductor
Is it Rohs certified?conform to
Objectid113192321
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance45 Ω
Number of components1
Maximum operating temperature200 °C
Maximum power dissipation0.5 W
Nominal reference voltage18 V
surface mountYES
Maximum voltage tolerance5%
Working test current5 mA
BZV55 series
Voltage regulator diodes
Rev. 5 — 26 January 2011
Product data sheet
1. Product profile
1.1 General description
Low-power voltage regulator diodes in small hermetically sealed glass SOD80C
Surface-Mounted Device (SMD) packages. The diodes are available in the normalized
E24
2
% (BZV55-B) and approximately
5
% (BZV55-C) tolerance range.
The series consists of 37 types with nominal working voltages from 2.4 V to 75 V.
1.2 Features and benefits
Non-repetitive peak reverse power
dissipation:
40 W
Total power dissipation:
500 mW
Two tolerance series:
2
% and
5
%
Wide working voltage range:
nominal 2.4 V to 75 V (E24 range)
Low differential resistance
Small hermetically sealed glass
SMD package
1.3 Applications
General regulation functions
1.4 Quick reference data
Table 1.
Symbol
V
F
P
ZSM
[1]
Quick reference data
Parameter
forward voltage
non-repetitive peak
reverse power dissipation
Conditions
I
F
= 10 mA
[1]
Min
-
-
Typ
-
-
Max
0.9
40
Unit
V
W
t
p
= 100
s;
square wave; T
j
= 25
C
prior to surge
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Graphic symbol
k
a
1
2
006aaa152
[1]
The marking band indicates the cathode.
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