FFB2907A / FMB2907A / MMPQ2907A
FFB2907A
E2
B2
C1
FMB2907A
C2
E1
C1
MMPQ2907A
E2
B2
E3
B3
E4
B4
E1
B1
SC70-6
Mark: .2F
pin #1
C2
B1
E1
pin #1
B1
B2
E2
SOIC-16
Mark:
MMPQ2907A
pin #1
C1
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
SuperSOT
-6
Mark: .2F
Dot denotes pin #1
C2
C1
C3
C2
C4
C4
C3
PNP Multi-Chip General Purpose Amplifier
This device is designed for use as a general purpose amplifier and switch requiring
collector currents to 500 mA. Sourced from Process 63.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Collector-Emitter Voltage
T
A
= 25°C unless otherwise noted
Parameter
Value
60
60
5.0
600
-55 to +150
Units
V
V
V
mA
°C
4
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJA
T
A
= 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
FFB2907A
300
2.4
415
Max
FMB2907A
700
5.6
180
MMPQ2907A
1,000
8.0
125
240
Units
mW
mW/°C
°C/W
°C/W
°C/W
1998 Fairchild Semiconductor Corporation
FFB2907A / FMB2907A / MMPQ2907A
PNP Multi-Chip General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
T
A
= 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
B
I
CEX
I
CBO
Collector-Emitter Breakdown
Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
Collector Cutoff Current
I
C
= 10 mA, I
B
= 0
I
C
= 10
µA,
I
E
= 0
I
E
= 10
µA,
I
C
= 0
V
CB
= 30 V, V
EB
= 0.5 V
V
CE
= 30 V, V
BE
= 0.5 V
V
CB
= 50 V, I
E
= 0
V
CB
= 50 V, I
E
= 0, T
A
= 125°C
60
60
5.0
50
50
0.02
20
V
V
V
nA
nA
µA
µA
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 0.1 mA, V
CE
= 10 V
I
C
= 1.0 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 150 mA, V
CE
= 10 V*
I
C
= 500 mA, V
CE
= 10 V*
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 150 mA, I
B
= 15 mA*
I
C
= 500 mA, I
B
= 50 mA
75
100
100
100
50
300
0.4
1.6
1.3
2.6
V
V
V
V
V
CE(
sat
)
V
BE(
sat
)
Collector-Emitter Saturation Voltage*
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
f
T
C
obo
C
ibo
Current Gain - Bandwidth Product
Output Capacitance
Input Capacitance
I
C
= 50 mA, V
CE
= 20 V,
f = 100 MHz
V
CB
= 10 V, I
E
= 0,
f = 100 kHz
V
EB
= 2.0 V, I
C
= 0,
f = 100 kHz
250
6.0
12
MHz
pF
pF
SWITCHING CHARACTERISTICS
t
on
t
d
t
r
t
off
t
s
t
f
Turn-on Time
Delay Time
Rise Time
Turn-off Time
Storage Time
Fall Time
V
CC
= 6.0 V, I
C
= 150 mA
I
B1
= I
B2
= 15 mA
V
CC
= 30 V, I
C
= 150 mA,
I
B1
= 15 mA
30
8.0
20
80
60
20
ns
ns
ns
ns
ns
ns
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
Spice Model
PNP (Is=650.6E-18 Xti=3 Eg=1.11 Vaf=115.7 Bf=231.7 Ne=1.829 Ise=54.81f Ikf=1.079 Xtb=1.5 Br=3.563 Nc=2
Isc=0 Ikr=0 Rc=.715 Cjc=14.76p Mjc=.5383 Vjc=.75 Fc=.5 Cje=19.82p Mje=.3357 Vje=.75 Tr=111.3n Tf=603.7p
Itf=.65 Vtf=5 Xtf=1.7 Rb=10)
FFB2907A / FMB2907A / MMPQ2907A
PNP Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics
V
CESAT
- COLLECTOR EMITTE R VOLTAGE (V)
h
FE
- TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain
vs Collector Current
500
V
CE
= 5V
Collector-Emitter Saturation
Voltage vs Collector Current
0.5
β
= 10
0.4
0.3
0.2
0.1
0
125
°
C
- 40
°
C
400
300
200
100
0
0.1
125 °C
25 °C
25 °C
- 40 °C
0.3
1
3
10
30
100
I
C
- COLLECTOR CURRENT (mA)
300
1
10
100
I
C
- COLLECTOR CURRE NT (mA)
500
V
BE( ON)
- BAS E EMITTER ON VOLTAGE (V)
V
BESAT
- BASE EMITTER VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
1
- 40
°
C
Base Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
0
0.1
- 40
°
C
0.8
0.6
0.4
0.2
0
25 °C
25 °C
125
°
C
β
= 10
125
°
C
4
V
CE
= 5V
1
10
100
I
C
- COLLECTOR CURRENT (mA)
500
1
10
I
C
- COLLECTOR CURRE NT (mA)
25
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLE CTOR CURRENT (nA)
100
V
CB
= 35V
10
Input and Output Capacitance
vs Reverse Bias Voltage
20
CAPACITANCE (pF)
16
12
C ib
1
8
4
0
0.1
C ob
0.1
0.01
25
50
75
100
T
A
- AMBIE NT TEMP ERATURE (
°
C)
125
1
10
REVERSE BIAS VOLTAGE (V)
50
FFB2907A / FMB2907A / MMPQ2907A
PNP Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Switching Times
vs Collector Current
250
I
B1
= I
B2
=
200
V cc = 15 V
I
c
10
Turn On and Turn Off Times
vs Collector Current
500
I
B1
= I
B2
=
400
V cc = 15 V
I
c
10
TIME (nS)
TIME (nS)
150
100
tr
tf
ts
300
200
t off
50
td
100
0
10
t on
0
10
100
I
C
- COLLECTOR CURRENT (mA)
1000
100
I
C
- COLLECTOR CURRENT (mA)
1000
Rise Time vs Collector
and Turn On Base Currents
I
B1
- TURN 0N BASE CURRENT (mA)
50
P
D
- POWE R DIS SIPATION (W)
1
Power Dissipation vs
Ambient Temperature
SOIC-16
0.75
20
10
5
30 ns
t r = 15 V
SOT-6
0.5
SC70 -6
0.25
2
60 ns
1
10
100
I
C
- COLLECTOR CURRENT (mA)
500
0
0
25
50
75
100
TE MPE RATURE (
°
C)
125
150
FFB2907A / FMB2907A / MMPQ2907A
PNP Multi-Chip General Purpose Amplifier
(continued)
Typical Common Emitter Characteristics
(f = 1.0kHz)
CHAR. RELATIVE TO VALUES AT I
C
= -10mA
CHAR. RELATIVE TO VALUES AT V
CE
= -10V
Common Emitter Characteristics
5
h
oe
2
1
0.5
h
ie
h
re
h
fe
Common Emitter Characteristics
1.3
h
re
h
ie
h
fe
h
oe
1.2
h
re
and h
oe
1.1
1
h
ie
0.9
h
fe
0.8
-4
I
C
= -10mA
T
A
= 25
o
C
-20
0.2
0.1
_
V
CE
= -10 V
T
A
= 25
o
C
1
_
_
_
_
2
5
10
20
I
C
- COLLECTOR CURRENT (mA)
_
50
-8
-12
-16
V
CE
- COLLECTOR VOLTAGE (V)
CHAR. RELATIVE TO VALUES AT T
A
= 25
o
C
Common Emitter Characteristics
1.5
I
C
= -10mA
1.4
V = -10 V
CE
1.3
1.2
1.1
h
oe
1
0.9
0.8
0.7
0.6
0.5
-40
h
fe
-20
0
20
40
60
80
T
A
- AMBIENT TEMPERATURE (
o
C)
100
h
re
h
ie
h
fe
h
ie
h
re
h
oe
4
Embedded System
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