2SB1027
Silicon PNP Epitaxial
ADE-208-1038 (Z)
1st. Edition
Mar. 2001
Application
Low frequency amplifier
Outline
UPAK
1
3
2
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
2SB1027
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
i
C(peak)
*
1
P
C
*
2
Tj
Tstg
Ratings
–180
–120
–5
–1.5
–3
1
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Notes: 1. PW
≤
10 ms, Duty cycle
≤
20%
2. Value on the alumina ceramic board (12.5
×
20
×
0.7 mm)
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE1
*
1
h
FE2
Collector to emitter saturation
voltage
Base to emitter voltage
Note:
Mark
h
FE1
V
CE(sat)
V
BE
Min
–180
–120
–5
—
60
30
—
—
Typ
—
—
—
—
—
—
—
—
Max
—
—
—
–10
320
—
–1.0
–0.9
V
V
Unit
V
V
V
µA
Test conditions
I
C
= –1 mA, I
E
= 0
I
C
= –10 mA, R
BE
=
∞
I
E
= –1 mA, I
C
= 0
V
CB
= –160 V, I
E
= 0
V
CE
= –5 V, I
C
= –0.15 A,
pulse
V
CE
= –5 V, I
C
= –0.5 A,
pulse
I
C
= –0.5 A, I
B
= –50 mA,
Pulse
V
CE
= –5 V, I
C
= –0.15 A,
pulse
1. The 2SB1027 is grouped by h
FE1
as follows.
EH
60 to 120
EJ
100 to 200
EK
160 to 320
2
2SB1027
Typical Output Characteristics
Maximum Collector Dissipation Curve
1.2
Collector Power Dissipation Pc (W)
(on the alumina ceramic board)
Collector Current I
C
(A)
–1.0
–5
.0
.0
–4
3.5
–
0
–3.
5
–2.
–2.0
–1.5
–0.8
0.8
–0.6
–0.4
0.4
–1.0
–0.2
–0.5 mA
I
B
= 0
0
50
100
150
Ambient Temperature Ta (°C)
0
–10
–20
–30
–40
–50
Collector to Emitter Voltage V
CE
(V)
Typical Transfer Characteristics
–500
Collector Current I
C
(mA)
V
CE
= –5 V
Pulse
1,000
DC Current Transfer Ratio h
FE
DC Current Transfer Ratio vs.
Collector Current
V
CE
= –5 V
Pulse
300
–100
Ta = 75
°
C
25
–25
100
–10
30
–1
0
–0.2
–0.4
–0.6
–0.8
–1.0
Base to Emitter Voltage V
BE
(V)
10
–10
–30
–100
–300
Collector Current I
C
(mA)
–1,000
3
2SB1027
Collector to Emitter Saturation Voltage vs.
Collector Current
Collector to Emitter Saturation Voltage
V
CE (sat)
(V)
–10
Gain Bandwidth Product f
T
(MHz)
I
C
= 10 I
B
Pulse
1,000
V
CE
= –5 V
Pulse
300
Gain Bandwidth Product vs.
Collector Current
–1.0
100
–0.1
30
–0.01
–1
–10
–100
Collector Current I
C
(mA)
–1,000
10
–10
–30
–100
–300
Collector Current I
C
(mA)
–1,000
Collector Output Capacitance vs.
Collector to Base Voltage
Collector Output Capacitance C
ob
(pF)
100
30
10
3
f = 1 MHz
I
E
= 0
1
–1
–3
–10
–30
–100
Collector to Base Voltage V
CB
(V)
4
2SB1027
Package Dimensions
As of January, 2001
Unit: mm
4.5
±
0.1
0.4
1.8 Max
φ
1
1.5
±
0.1
0.44 Max
(2.5)
(1.5)
1.5 1.5
3.0
0.8 Min
0.44 Max
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
(0.4)
0.53 Max
0.48 Max
2.5
±
0.1
4.25 Max
UPAK
—
Conforms
0.050 g
(0.2)
5
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