Ordering number : ENA1080
2SC5415A
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistor
2SC5415A
Features
•
•
High-Frequency Low-Noise
Amplifier Applications
High gain
:
⏐S21e⏐
2
=9dB typ (f=1GHz).
High cut-off frequency : fT=6.7GHz typ.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
When mounted on ceramic substrate (250mm
✕0.8mm)
2
Conditions
Ratings
20
12
2
100
800
150
--55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE1
hFE2
VCB=10V, IE=0A
VEB=1V, IC=0A
VCE=5V, IC=30mA
VCE=5V, IC=70mA
90*
70
Conditions
Ratings
min
typ
max
1.0
10
270*
Unit
μA
μA
Continued on next page.
* : The 2SC5415A is classified by 30mA hFE as follows :
Marking
Rank
hFE
EA E
E
90 to 180
EA F
F
135 to 270
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
www.semiconductor-sanyo.com/network
93009AB TK IM TC-00002100 No. A1080-1/6
2SC5415A
Continued from preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Forward Transfer Gain
Noise Figure
Symbol
fT
Cob
Cre
⏐
S21e
⏐
NF
2
Conditions
VCE=5V, IC=30mA
VCB=5V, f=1MHz
VCB=5V, f=1MHz
VCE=5V, IC=30mA, f=1GHz
VCE=5V, IC=7mA, f=1GHz
Ratings
min
5
typ
6.7
1.2
0.65
7.5
9
1.1
2.0
1.8
max
Unit
GHz
pF
pF
dB
dB
Package Dimensions
unit : mm (typ)
7007B-004
50
IC -- VCE
0.35mA
0.30mA
0.25mA
Collector Current, IC -- mA
100
IC -- VBE
Collector Current, IC -- mA
40
80
30
0.20mA
0.15mA
60
20
40
0.10mA
10
V
CE =
0
0
0.2
0.4
0.6
0.05mA
IB=0mA
0
2
4
6
8
10
IT13392
0
0.8
2V
1.0
5V
20
1.2
IT13393
Collector-to-Emitter Voltage, VCE -- V
Base-to-Emitter Voltage, VBE -- V
No. A1080-2/6
2SC5415A
7
5
hFE -- IC
Gain-Bandwidth Product, fT -- GHz
10
fT -- IC
=5V
VCE
2V
7
3
DC Current Gain, hFE
2
VCE=5V
5
100
7
5
3
2
2V
3
2
10
3
5 7 1.0
2
3
5 7 10
2
3
5
7 100
2
3
1.0
1.0
2
3
5
7
10
2
3
5
Collector Current, IC -- mA
10
7
IT13394
10
Cob -- VCB
f=1MHz
Collector Current, IC -- mA
7 100
IT13395
Cre -- VCB
Output Capacitance, Cob -- pF
5
3
2
Reverse Transfer Capacitance, Cre -- pF
7
5
3
2
f=1MHz
1.0
7
5
3
2
1.0
7
5
3
2
0.1
7 0.1
2
3
5
7 1.0
2
3
5
7 10
2
3
0.1
7 0.1
2
3
5
7 1.0
2
3
5
7 10
2
IT13397
3
Collector-to-Base Voltage, VCB -- V
10
IT13396
12
NF -- IC
f=1GHz
Collector-to-Base Voltage, VCB -- V
⏐
S21e
⏐
2
-- I
C
f=1GHz
Forward Transfer Gain,⏐
S21e
⏐
2
-- dB
8
10
V
V CE=5
Noise Figure, NF -- dB
8
2V
6
6
4
4
2
2V
V CE=
5V
2
0
7
1.0
2
3
5
7
10
2
3
5
0
Collector Current, IC -- mA
1000
7 100
IT13399
7
1.0
2
3
5
7
10
2
3
5
PC -- Ta
Collector Current, IC -- mA
7 100
IT13398
When mounted on ceramic substrate
(250mm
2
✕0.8mm)
Collector Dissipation, PC -- mW
800
600
400
200
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT13400
No. A1080-3/6
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