Ordering number : ENN1421B
2SA1338/2SC3392
SANYO Semiconductors
DATA SHEET
2SA1338 / 2SC6080
Features
PNP/NPN Epitaxial Planar Silicon Transistor
High-Speed Switching Applications
Package Dimensions
unit:mm
2018B
[2SA1338/2SC3392]
0.5
0.4
0.16
0 to 0.1
· Adoption of FBET process.
· High breakdown voltage : V
CEO
=(–)50V.
· Large current capacitiy and high f
T
.
· Ultrasmall-sized package permitting sets to be small-
sized, slim.
3
1
0.95 0.95
2
1.9
2.9
0.5
1.5
2.5
( ) : 2SA1338
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
I CP
PC
Tj
Tstg
Conditions
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
0.8
1.1
Ratings
(–)60
(–)50
(–)5
(–)500
(–)800
200
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)10mA
100*
Conditions
Ratings
min
typ
max
(–)0.1
(–)0.1
560*
Unit
µA
µA
* : The 2SA1338/2SC3392 are classified by 10mA h
FE
as follows :
Rank
hF
E
4
100 to 200
5
140 to 280
6
200 to 400
7
280 to 560
Continued on next page.
Note : 2SA1338 Marking : AL, 2SC3392 Marking : AY
h
FE
rank : 4, 5, 6, 7
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
80906 / 83002TN (KT)/71598HA (KT)/3197KI/1114KI, MT No.1421-1/5
2SA1338/2SC3392
Continued from preceding page.
Parameter
Gain-Bandwidth Product
Common Base Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
fT
Cob
VCE(sat)
VBE(sat)
Conditions
VCE=(–)10V, IC=(–)50mA
VCB=(–)10V, f=1MHz
IC=(–)100mA, IB=(–)10mA
IC=(–)100mA, IB=(–)10mA
(–)60
(–)50
(–)5
70(70)
VCC=20V
IC=10IB1=–10IB2=100mA
400
(400)
70(50)
Ratings
min
typ
300
(200)
3.7
(5.6)
0.1
(0.15)
0.8
max
Unit
MHz
pF
0.3
(0.4)
1.2
V
V
V
V
V
ns
ns
ns
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO IC=(–)100µA, RBE=∞
V(BR)EBO IE=(–)10µA, IC=0
ton
tstg
tf
Switching Time Test Circuit
PW=10µs
D.C.=≤1%
INPUT
VR
50Ω
+
100µF
--5V
+
470µF (For PNP, the polarity is reversed.)
VCC=20V
IB1
RB
IB2
RL
200Ω
OUT
A
2SA1338
700
µ
A
60
0
µ
A
--
100
--
90
IC -- VCE
--7
0
µ
A
A
00
-400
µ
5
-
--
100
90
IC -- VCE
µ
A
00
5
2SC3392
40
0
µ
A
300
µ
A
Collector Current, IC – mA
--
70
--
60
--
50
--
40
--
30
--
20
--
10
0
0
Collector Current, IC – mA
--
80
0
µ
--600
µ
A
--300
µ
A
80
70
60
50
40
30
20
10
--200
µ
A
200µA
--100µA
100µA
IB=0
--
0.2
--
0.4
--
0.6
--
0.8
Collector-to-Emitter Voltage, VCE – V
--
1.0
ITR05058
0
IB=0
0
0.2
0.4
0.6
0.8
1.0
ITR05059
Collector-to-Emitter Voltage, VCE – V
20
18
--
20
--
18
IC -- VCE
µ
A
--60
50
µ
A
--
2SA1338
µ
A
--40
IC -- VCE
60
µ
A
50
µ
A
40
µ
A
30
µ
A
2SC3392
Collector Current, IC – mA
--
14
--
12
--
10
--
8
--
6
--
4
--
2
0
0
--30
µ
A
Collector Current, IC – mA
--
16
16
14
12
10
8
6
4
2
--20
µ
A
--10
µ
A
20
µ
A
10
µA
IB=0
--
5
--
10
--
15
--
20
--
25
--
30
--
35
--
40
Collector-to-Emitter Voltage, VCE – V
ITR05060
0
IB=0
0
5
10
15
20
25
30
35
40
Collector-to-Emitter Voltage, VCE – V
ITR05061
No.1421-2/5
2SA1338/2SC3392
--
120
--
100
IC -- VBE
2SA1338
VCE=--5V
120
IC -- VBE
2SC3392
VCE=5V
100
Collector Current, IC – mA
--25
°C
Ta=75
°
C
--
60
--
40
--
20
0
0
60
40
20
--
0.2
--
0.4
--
0.6
--
0.8
Base-to-Emitter Voltage, VBE – V
--
1.0
ITR05062
0
0
0.2
0.4
Ta=75
°
C
0.6
--25
°C
0.8
25
°C
25
°C
--
80
Collector Current, IC – mA
80
1.0
ITR05063
Base-to-Emitter Voltage, VBE – V
2
2
hFE -- IC
2SA1338
VCE=--5V
Ta=75
°C
25
°C
hFE -- IC
2SC3392
VCE=5V
1000
7
1000
7
DC Current Gain, hFE
5
3
2
DC Current Gain, hFE
5
3
2
Ta=75
°C
--25
°C
25
°C
--25
°C
100
7
5
3
100
7
5
3
--
1.0
1000
2
2
3
5 7
--
10 2 3 5 7
--
100 2
Collector Current, IC – mA
3
5 7
--
1000
ITR05064
2
1.0
2
3
5 7 10
2
3
Collector Current, IC – mA
5 7 100
2
3
5 7 1000
ITR05065
fT -- IC
2SA1338
VCE=--10V
1000
fT -- IC
2SC3392
VCE=10V
Gain-Bandwidth Product, fT – MHz
Gain-Bandwidth Product, fT – MHz
7
5
3
2
7
5
3
2
100
7
5
3
2
100
7
5
3
2
10
--
1.0
3
2
2
3
5 7
--
10 2 3 5 7
--
100 2
Collector Current, IC – mA
3
5 7
--
1000
ITR05066
10
1.0
2
3
5
Collector Current, IC – mA
7 10
2
3
5
7 100
2
3
5 7 1000
ITR05067
Cob -- VCB
2SA1338
f=1MHz
3
2
Cob -- VCB
2SC3392
f=1MHz
Output Capacitance, Cob – pF
--
10
7
5
Output Capacitance, Cob – pF
7
2
--
10
Collector-to-Base Voltage, VCB -- V
2
3
5
7
3
5
10
7
5
3
2
3
2
--
1.0
--
1.0
1.0
7
1.0
2
3
5
7
10
2
3
5
ITR05068
Collector-to-Base Voltage, VCB -- V
ITR05069
No.1421-3/5
2SA1338/2SC3392
--
10
5
VCE(sat) -- IC
2SA1338
IC / IB=10
10
5
VCE(sat) -- IC
2SC3392
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
5
2
3
3
2
3
2
1.0
5
3
2
0.1
5
3
2
5
2
3
5
2
3
5
2
3
5 1000
ITR05071
--
1.0
5
3
2
--
0.1
5
3
2
--
0.01
--
1.0
--
10 2 3 5
--
100
Collector Current, IC – mA
5
2
3
5
--
1000
0.01
1.0
10
100
ITR05070
10
7
Collector Current, IC – mA
--
10
7
VBE(sat) -- IC
2SA1338
IC / IB=10
VBE(sat) -- IC
2SC3392
IC / IB=10
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
5
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
2
3
5
3
2
3
2
--
1.0
7
5
1.0
7
5
3
5
--
1.0
--
10 2 3 5
--
100
Collector Current, IC – mA
5
2
3
5
--
1000
3
5
1.0
2
3
5
10
2
3
5
100
2
3
ITR05072
2
1.0
7
Collector Current, IC – mA
5 1000
ITR05073
2
SW Time -- IC
2SA1338
VCC=20V
IC=10IB1=--10IB2
SW Time -- IC
2SC3392
VCC=20V
IC=10IB1=--10IB2
1.0
7
Switching Time, –
µs
Switching Time, –
µs
5
3
2
0.1
7
5
3
2
tstg
5
3
2
0.1
7
5
3
tstg
tr
tf
tf
td
tr
10
2
3
5
7
100
2
3
5
7
td
--
10
2
2
--
100
Collector Current, IC – mA
5
7
3
3
5
7
2
0.01
0.01
7
7
ITR05074
240
Collector Current, IC – mA
ITR05075
ASO
1000
7
5
PC -- Ta
2SA1338 / 2SC3392
Collector Current, IC – mA
3
2
100
7
5
3
2
10
7
5
3
3
10
s
10
DC
ms
0m
Collector Dissipation, P
C
– mW
ICP=800mA
IC
=5
00
mA
1m
200
s
160
op
era
120
tio
n
80
40
2SA1338 / 2SC3392
(For PNP, minus sign is omitted.)
5
7
1.0
2
3
5
7
10
2
3
5
Collector-to-Emitter Voltage, VCE – V
7 100
ITR05076
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – ˚C
ITR05077
No.1421-4/5
2SA1338/2SC3392
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of August, 2002. Specifications and information herein are subject
to change without notice.
PS No.1421-5/5
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