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DATA SHEET
DATA SHEET
SILICON TRANSISTOR
2SC4095
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
DESCRIPTION
The 2SC4095 is an NPN epitaxial silicon transistor designed for use in
low-noise and small signal amplifiers from VHF band to UHF band.
2SC4095 features excellent power gain with very low-noise figures.
2SC4095 employs direct nitiride passivated base surface process (DNP
process) which is an NEC proprietary new fabrication technique which
provides excellent noise figures at high current values.
excellent associated gain and very wide dynamic range.
This allows
2.9±0.2
(1.8)
0.85 0.95
PACKAGE DIMENSIONS
(Units: mm)
0.4
−0.05
0.4
−0.05
0.16
5°
+0.1
−0.06
2.8
−0.3
+0.2
1.5
−0.1
2
3
4
5°
0 to 0.1
+0.2
+0.1
+0.1
0.6
−0.05
• NF = 1.8 dB TYP. @ f = 2.0 GHz, V
CE
= 6 V, I
C
= 5 mA
•
S
21e
2
= 9.5 dB TYP. @ f = 2.0 GHz, V
CE
= 6 V, I
C
= 10 mA
1.1
−0.1
0.8
+0.2
5°
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feed-Back Capacitance
Insertion Power Gain
Maximum Available Gain
Noise Figure
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
SYMBOL
I
CBO
I
EBO
h
FE
f
T
C
re
50
20
10
1.5
35
200
150
V
V
V
mA
mW
5°
65 to +150
MIN.
TYP.
C
C
MAX.
1.0
1.0
UNIT
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
TEST CONDITIONS
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 6 V, I
C
= 10 mA
GHz
0.8
pF
dB
dB
3.0
dB
V
CE
= 6 V, I
C
= 10 mA f = 1.0 GHz
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
V
CE
= 6 V, I
C
= 10 mA, f = 2.0 GHz
V
CE
= 6 V, I
C
= 10 mA, f = 2.0 GHz
V
CE
= 6 V, I
C
= 5 mA, f = 2.0 GHz
A
A
100
10
0.25
250
S
21e
2
MAG
NF
7.5
9.5
12
1.8
h
FE
Classification
Class
Marking
h
FE
R46/RDF *
R46
50 to 100
R47/RDG *
R47
80 to 160
R48/RDH *
R48
125 to 250
* Old Specification / New Specification
Document No. P10367EJ2V1DS00 (2nd edition)
Date Published March 1997 N
Printed in Japan
©
0.4
−0.05
+0.1
+0.1
FEATURES
1
(1.9)
1987
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