2SC4519-4 datasheet, PDF - EEWORLD Datasheet

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2SC4519-4: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, CP, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size31KB，4 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SC4519-4 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, CP, 3 PIN

2SC4519-4 Parametric

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.2 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	350 MHz
Maximum off time (toff)	350 ns
Maximum opening time (tons)	120 ns
VCEsat-Max	0.45 V
Base Number Matches	1

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Ordering number:ENN3138

NPN Epitaxial Planar Silicon Transistors

2SC4519

High-Speed Switching Applications

Features

· Adoption of FBET process.

· Low collector-to-emitter saturation voltage.

· High-speed switching.

· Small-sized package.

Package Dimensions

unit:mm

2018B

[2SC4519]

0.5

0.4

0.16

0 to 0.1

0.95 0.95

1.9

2.9

0.5

1.5

2.5

Specifications

Absolute Maximum Ratings

at Ta = 25˚C

Parameter

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

Collector Dissipation

Junction Temperature

Storage Temperature

Symbol

VCBO

VCEO

VEBO

ICP

Tstg

Conditions

1 : Base

2 : Emitter

3 : Collector

SANYO : CP

0.8

1.1

Ratings

500

200

150

–55 to +150

Unit

˚C

Electrical Characteristics

at Ta = 25˚C

Parameter

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain-Bandwidth Product

Output Capacitance

Symbol

ICBO

IEBO

hFE1

hFE2

Cob

VCB=45V, IE=0

VEB=3V, IC=0

VCE=2V, IC=50mA

VCE=2V, IC=500mA

VCE=2V, IC=50mA

VCB=10V, f=1MHz

140 to 280

200 to 400

Conditions

Ratings

min

typ

max

0.5

100*

350

400*

Unit

µA

MHz

* : The 2SC4519 is classified by 50mA h

as follows :

Marking : TT

Rank

rank : 4, 5, 6

hFE

Continued on next page.

100 to 200

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

92304TN (PC)/D2598HA (KT)/7059MO, TS No.3138–1/4

2SC4519

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer's

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or

contained herein are controlled under any of applicable local export control laws and regulations,

such products must not be expor ted without obtaining the expor t license from the authorities

concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co., Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of September, 2004. Specifications and information herein are

subject to change without notice.

PS No.3138–4/4

2SC4519-4 Related Products

	2SC4519-4	2SC4519-5	2SC4519-6
Description	Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, CP, 3 PIN	Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, CP, 3 PIN	Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, CP, 3 PIN
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3
Reach Compliance Code	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.5 A	0.5 A	0.5 A
Collector-emitter maximum voltage	45 V	45 V	45 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	100	140	200
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.2 W	0.2 W	0.2 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	350 MHz	350 MHz	350 MHz
Maximum off time (toff)	350 ns	350 ns	350 ns
Maximum opening time (tons)	120 ns	120 ns	120 ns
VCEsat-Max	0.45 V	0.45 V	0.45 V
Base Number Matches	1	1	1

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