Ordering number:ENN5613
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1973/2SC5310
DC/DC Converter Applications
Features
· Adoption of FBET, MBIT processes.
· Large current capacitance.
· Low collector-to-emitter saturation voltage.
· High-speed switching.
· Ultrasmall package facilitates miniaturization in end
products.
Package Dimensions
unit:mm
2018B
[2SA1973/2SC5310]
0.5
0.4
3
0.16
0 to 0.1
0.5
1
0.95 0.95
2
1.9
2.9
1.5
2.5
1 : Base
0.8
1.1
Specifications
( ) : 2SA1973
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Mounted on a glass-epoxy board (20×30×1.6mm)
2 : Emitter
3 : Collector
SANYO : CP
Conditions
Ratings
(–)30
(–)25
(–)6
(–)1
(–)3
(–)200
250
150
–55 to +150
Unit
V
V
V
A
A
mA
mW
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE
VCB=(–)20V, IE=0
VEB=(–)3V, IC=0
VCE=(–)2V, IC=(–)100mA
135*
Conditions
Ratings
min
typ
max
(–)0.1
(–)0.1
400*
Unit
µA
µA
* : The 2SA1973/2SC5310 are classified by 100mA h
FE
as follows :
Rank
hFE
135
5
to
270
200
6
to
400
Continued on next page.
Marking : 2SA1973 : NS
2SC5310 : NN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
60100TS (KOTO) TA-1556 No.5613–1/4
2SA1973/2SC5310
Continued on preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
fT
Cob
VCE(sat)
Conditions
VCE=(–)10V, IC=(–)50mA
VCB=(–)10V, f=1MHz
IC=(–)500mA, IB=(–)25mA
Ratings
min
typ
150
(32)19
(–150)
100
(–)0.85
(–)30
(–)25
(–)6
(60)60
(350)
500
(25)25
(–300)
200
(–)1.2
max
Unit
MHz
pF
mV
mV
V
V
V
V
ns
ns
ns
ns
VBE(sat) IC=(–)500mA, IB=(–)25mA
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO
ton
tstg
tf
IE=(–)10µA, IC=0
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
VR
50Ω
+
100µF
VBE=--5V
+
470µF
VCC=12V
IB1
IB2
1kΩ
OUTPUT
RL
20IB1= --20IB2= IC=500mA
(For PNP, the polarity is reversed.)
--1.0
IC -- VCE
2SA1973
Pulse
Collector Current, IC — A
1.0
IC -- VCE
2SC5310
Pulse
6mA
Collector Current, IC — A
--0.8
0.8
--0.6
0.6
--6mA
--0.4
4mA
0.4
--4mA
--2mA
IB=0
0
--0.4
--0.8
--1.2
--1.6
--2.0
ITR08234
2mA
0.2
--0.2
0
0
0
0.4
0.8
1.2
IB=0
1.6
2.0
ITR08235
Collector-to-Emitter Voltage, VCE — V
--1000
Collector-to-Emitter Voltage, VCE — V
1000
IC -- VBE
2SA1973
VCE=--2V
Pulse
IC -- VBE
2SC5310
VCE=2V
Pulse
Collector Current, IC — mA
--600
Collector Current, IC — mA
--800
800
600
--200
Ta=7
5
°
C
25
°
C
--25
°
C
--400
400
200
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
ITR08237
Base-to-Emitter Voltage, VBE — V
ITR08236
Base-to-Emitter Voltage, VBE — V
Ta=75
°
C
25
°
C
--25
°
C
No.5613–2/4
2SA1973/2SC5310
1000
7
5
hFE -- IC
2SA1973
VCE=--2V
Pulse
5
hFE -- IC
2SC5310
VCE=2V
Pulse
3
DC Current Gain, hFE
3
2
Ta=75°C
25°C
--25°C
DC Current Gain, hFE
Ta=75°C
2
25
°C
--25
°C
100
100
7
7
5
7 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Collector Current, IC — A
1000
7
ITR08238
1000
Collector Current, IC — A
ITR08239
f T -- IC
2SA1973
VCE=--10V
Pulse
f T -- IC
2SC5310
VCE=10V
Pulse
Gain-Bandwidth Product, fT — MHz
5
3
2
Gain-Bandwidth Product, fT — MHz
7
5
3
2
100
7
5
3
2
100
7
5
3
2
10
--10
10
2
3
5
7
Collector Current, IC — mA
--100
2
3
5
7 --1000
ITR08240
100
10
2
3
5
7
Collector Current, IC — mA
100
2
3
5
7 1000
ITR08241
100
Cob -- VCB
2SA1973
f=1MHz
Cob -- VCB
2SC5310
f=1MHz
Output Capacitance, Cob — pF
5
Output Capacitance, Cob — pF
7
2
3
5
7
2
3
5
7
7
5
3
3
2
2
10
--1.0
10
Collector-to-Base Voltage, VCB -- V
--10
7
1.0
2
3
5
7
ITR08242
5
3
2
Collector-to-Base Voltage, VCB -- V
10
2
3
5
ITR08243
--1000
7
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE (sat) — mV
2SA1973
IC / IB=20
Pulse
VCE(sat) -- IC
2SC5310
IC / IB=20
Pulse
Collector-to-Emitter
Saturation Voltage, VCE (sat) — mV
5
3
2
100
7
5
3
2
--100
7
5
3
2
--10
7
7 --0.01
2
2
C
75
°
Ta=
5
°
C
--2
5
°
C
3
5
=7
Ta
25
°
C
5
°
C
5
--2
°
C
10
7
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Collector Current, IC — A
7 --0.1
2
3
5
7 --1.0
2
3
ITR08244
Collector Current, IC — A
ITR08245
No.5613–3/4
2SA1973/2SC5310
3
VBE(sat) -- IC
Base-to-Emitter
Saturation Voltage, VBE (sat) — V
Base-to-Emitter
Saturation Voltage, VBE (sat) — V
2
2SA1973
IC / IB=20
Pulse
3
VBE(sat) -- IC
2SC5310
IC / IB=20
Pulse
2
--1.0
1.0
--25°C
7
--25°C
7
Ta=75
°
C
5
25°C
Ta=75
°
C
5
25°C
3
7 --0.01
2
3
5
3
Collector Current, IC — A
7 --0.1
2
3
5
7 --1.0
2
3
7 0.01
2
3
5
ITR08246
280
250
240
Collector Current, IC — A
7 0.1
2
3
5
7 1.0
2
3
ITR08247
7
5
3
2
ASO
ICP
IC
2SA1973 / 2SC5310
Collector Dissipation, P
C
— mW
PC -- Ta
2SA1785 2SC4645
2SA1973 / 2SC5310
M
PT
=1
Collector Current, IC — A
ou
nt
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
10
DC
ed
00
µ
s
s
1m
ms
200
on
ag
las
160
s-e
op
po
era
tio
xy
n
120
bo
ar
d
(2
0
×
Ta=25°C
Single pulse
Mounted on a glass-epoxy board
(20×30×1.6mm)
For PNP, the minus sign (—) is omitted.
2
3
5
7
80
30
×
1
.6
m
m
40
0
)
Collector-to-Emitter Voltage, VCE — V
1.0
2
3
5
7
10
2
3
5
0
20
40
60
80
100
120
140
160
ITR08248
Ambient Temperature, Ta — ßC
ITR08249
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2000. Specifications and information herein are subject to
change without notice.
PS No.5613–4/4
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EEWORLD
