PSMN3R5-30YL,115 datasheet, PDF

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PSMN3R5-30YL,115: Description100 A, 30 V, 0.0056 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235; CategoryDiscrete semiconductor The transistor; File Size239KB，14 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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PSMN3R5-30YL,115 Overview

100 A, 30 V, 0.0056 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235

PSMN3R5-30YL,115 Parametric

Parameter Name	Attribute value
Brand Name	NXP Semiconduc
Is it Rohs certified?	conform to
Parts packaging code	SOIC
package instruction	PLASTIC, LFPAK-4
Contacts	4
Manufacturer packaging code	SOT669
Reach Compliance Code	_compli
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	54 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	100 A
Maximum drain current (ID)	100 A
Maximum drain-source on-resistance	0.0056 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	MO-235
JESD-30 code	R-PSSO-G4
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	74 W
Maximum pulsed drain current (IDM)	447 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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PSMN3R5-30YL

N-channel 30 V 3.5 mΩ logic level MOSFET in LFPAK

Rev. 4 — 9 March 2011

Product data sheet

1. Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product is designed and qualified for use in

industrial and communications applications.

1.2 Features and benefits

High efficiency due to low switching

and conduction losses

Suitable for logic level gate drive

sources

1.3 Applications

Class-D amplifiers

DC-to-DC converters

Motor control

Server power supplies

1.4 Quick reference data

Table 1.

Symbol

tot

DSon

Quick reference data

Parameter

drain current

total power

dissipation

junction temperature

drain-source

on-state resistance

gate-drain charge

total gate charge

= 10 V; I

= 15 A;

= 25 °C

= 4.5 V; I

= 10 A;

= 12 V; see

Figure 14;

see

Figure 15

= 10 V; T

j(init)

= 25 °C;

= 100 A; V

sup

≤

30 V;

= 50

Ω;

unclamped

Conditions

= 25 °C; V

= 10 V;

see

Figure 1

= 25 °C; see

Figure 2

[1]

Min

-55

Typ

Max Unit

100

175

°C

mΩ

drain-source voltage T

≥

25 °C; T

≤

175 °C

Static characteristics

2.43 3.5

Dynamic characteristics

G(tot)

Avalanche ruggedness

DS(AL)S

non-repetitive

drain-source

avalanche energy

[1]

Continuous current is limited by package.

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