PSMN014-40YS
N-channel LFPAK 40 V, 14 mΩ standard level MOSFET
Rev. 03 — 25 October 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
Advanced TrenchMOS provides low
RDSon and low gate charge
High efficiency gains in switching
power converters
Improved mechanical and thermal
characteristics
LFPAK provides maximum power
density in a Power SO8 package
1.3 Applications
DC-to-DC convertors
Lithium-ion battery protection
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
T
j
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 5 A;
T
j
= 100 °C; see
Figure 12
V
GS
= 10 V; I
D
= 5 A;
T
j
= 25 °C; see
Figure 13
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
T
mb
= 25 °C; V
GS
= 10 V;
see
Figure 1
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
-55
-
-
Typ
-
-
-
-
-
11
Max Unit
40
46
56
175
20
14
V
A
W
°C
mΩ
mΩ
Static characteristics
NXP Semiconductors
PSMN014-40YS
N-channel LFPAK 40 V, 14 mΩ standard level MOSFET
Quick reference data
…continued
Parameter
gate-drain charge
total gate charge
Conditions
V
GS
= 10 V; I
D
= 25 A;
V
DS
= 20 V; see
Figure 14;
see
Figure 15
V
GS
= 10 V; T
j(init)
= 25 °C;
I
D
= 46 A; V
sup
≤
40 V;
unclamped; R
GS
= 50
Ω
Min
-
-
Typ
2.4
12
Max Unit
-
-
nC
nC
Table 1.
Symbol
Q
GD
Q
G(tot)
Dynamic characteristics
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source avalanche
energy
-
-
21
mJ
2. Pinning information
Table 2.
Pin
1
2
3
4
mb
Pinning information
Symbol Description
S
S
S
G
D
source
source
source
gate
mounting base; connected to
drain
mbb076
Simplified outline
mb
Graphic symbol
D
G
S
1 2 3 4
SOT669 (LFPAK)
3. Ordering information
Table 3.
Ordering information
Package
Name
PSMN014-40YS
LFPAK
Description
Version
plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
Type number
PSMN014-40YS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 25 October 2010
2 of 15
NXP Semiconductors
PSMN014-40YS
N-channel LFPAK 40 V, 14 mΩ standard level MOSFET
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
T
sld(M)
I
S
I
SM
E
DS(AL)S
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
T
mb
= 25 °C
pulsed; t
p
≤
10 µs; T
mb
= 25 °C
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 46 A;
V
sup
≤
40 V; unclamped; R
GS
= 50
Ω
V
GS
= 10 V; T
mb
= 100 °C; see
Figure 1
V
GS
= 10 V; T
mb
= 25 °C; see
Figure 1
pulsed; t
p
≤
10 µs; T
mb
= 25 °C; see
Figure 3
T
mb
= 25 °C; see
Figure 2
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
T
j
≥
25 °C; T
j
≤
175 °C; R
GS
= 20 kΩ
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
Max
40
40
20
32
46
183
56
175
175
260
46
183
21
Unit
V
V
V
A
A
A
W
°C
°C
°C
A
A
mJ
In accordance with the Absolute Maximum Rating System (IEC 60134).
Source-drain diode
Avalanche ruggedness
50
I
D
(A)
40
003aad331
120
P
der
(%)
80
03aa16
30
20
40
10
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
Fig 1.
Continuous drain current as a function of
mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
PSMN014-40YS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 25 October 2010
3 of 15
NXP Semiconductors
PSMN014-40YS
N-channel LFPAK 40 V, 14 mΩ standard level MOSFET
10
3
I
D
(A)
10
2
003aad332
Limit R
DSon
= V
DS
/ I
D
10
μs
10
DC
100
μs
1 ms
1
10 ms
100 ms
10
-1
10
-1
1
10
V
DS
(V)
10
2
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN014-40YS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 25 October 2010
4 of 15
NXP Semiconductors
PSMN014-40YS
N-channel LFPAK 40 V, 14 mΩ standard level MOSFET
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
Conditions
see
Figure 4
Min
-
Typ
1.4
Max
2.7
Unit
K/W
10
Z
th (j-mb)
(K/W)
1
δ
= 0.5
0.2
0.1
10
−1
0.05
P
003a a d340
δ
=
0.02
t
p
T
single shot
10
−2
1
−6
t
p
T
10
−5
10
−4
10
−3
10
−2
10
−1
t
tp (s)
1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
values
PSMN014-40YS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 25 October 2010
5 of 15
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