TO
-22
0A
B
PSMN4R3-80PS
N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220
Rev. 03 — 18 April 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
1.3 Applications
DC-to-DC converters
Load switch
Motor control
Server power supplies
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
T
j
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
junction
temperature
drain-source
on-state resistance
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 13
V
GS
= 10 V; I
D
= 25 A;
T
j
= 100 °C; see
Figure 12
[2]
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
T
mb
= 25 °C; V
GS
= 10 V;
see
Figure 1
T
mb
= 25 °C; see
Figure 2
[1]
Min
-
-
-
-55
Typ
-
-
-
-
Max Unit
80
120
306
175
V
A
W
°C
Static characteristics
R
DSon
-
-
3.7
6.1
4.3
7.1
mΩ
mΩ
[2]
NXP Semiconductors
PSMN4R3-80PS
N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220
Quick reference data
…continued
Parameter
gate-drain charge
total gate charge
Conditions
V
GS
= 10 V; I
D
= 75 A;
V
DS
= 40 V; see
Figure 14;
see
Figure 15
V
GS
= 10 V; T
j(init)
= 25 °C;
I
D
= 120 A; V
sup
≤
80 V;
R
GS
= 50
Ω;
unclamped
Min
-
-
Typ
Max Unit
nC
nC
Table 1.
Symbol
Q
GD
Q
G(tot)
Dynamic characteristics
28.4 -
111
-
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
-
-
676
mJ
[1]
[2]
Continuous current is limited by package
Measured 3 mm from package.
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
drain
mbb076
Simplified outline
mb
Graphic symbol
D
G
S
1 2 3
SOT78 (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Package
Name
PSMN4R3-80PS
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
Type number
PSMN4R3-80PS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 03 — 18 April 2011
2 of 15
NXP Semiconductors
PSMN4R3-80PS
N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
T
sld(M)
I
S
I
SM
E
DS(AL)S
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
T
mb
= 25 °C
pulsed; t
p
≤
10 µs; T
mb
= 25 °C
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 120 A;
V
sup
≤
80 V; R
GS
= 50
Ω;
unclamped
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
T
j
≥
25 °C; T
j
≤
175 °C; R
GS
= 20 kΩ
V
GS
= 10 V; T
mb
= 100 °C; see
Figure 1
V
GS
= 10 V; T
mb
= 25 °C; see
Figure 1
pulsed; t
p
≤
10 µs; T
mb
= 25 °C;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
[1]
[1]
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
Max
80
80
20
120
120
688
306
175
175
260
120
688
676
Unit
V
V
V
A
A
A
W
°C
°C
°C
A
A
mJ
Source-drain diode
Avalanche ruggedness
[1]
Continuous current is limited by package
200
I
D
(A)
160
003aaf630
120
P
der
(%)
80
03aa16
120
(1)
80
40
40
0
0
50
100
150
200
T
mb
(
°
C)
0
0
50
100
150
T
mb
(°C)
200
Fig 1.
Continuous drain current as a function of
mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
PSMN4R3-80PS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 03 — 18 April 2011
3 of 15
NXP Semiconductors
PSMN4R3-80PS
N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220
10
3
I
D
(A)
10
2
Limit R
DSon
= V
DS
/ I
D
t
p
=10
μ
s
100
μ
s
003aaf676
10
1 ms
1
DC
10 ms
100 ms
10
-1
10
-1
1
10
10
2
10
3
V
DS
(V)
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN4R3-80PS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 03 — 18 April 2011
4 of 15
NXP Semiconductors
PSMN4R3-80PS
N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to ambient
Conditions
see
Figure 4
Vertical in free air
Min
-
-
Typ
0.3
60
Max
0.49
-
Unit
K/W
K/W
1
Z
th(j-mb)
(K/W)
10
-1
003aaf629
δ
= 0.5
0.2
0.1
0.05
t
p
T
10
-2
0.02
single shot
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
P
δ
=
t
p
T
t
10
-1
t
p
(s)
1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN4R3-80PS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 03 — 18 April 2011
5 of 15
Analogue and Mixed Signal
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