PMPB20EN
MD
-6
30 V N-channel Trench MOSFET
Rev. 1 — 16 May 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
DF
N2
020
1.2 Features and benefits
Trench MOSFET technology
Very fast switching
Small and leadless ultra thin SMD
plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent
thermal conduction
Tin-plated 100 % solderable side pads
for optical solder inspection
1.3 Applications
Charging switch for portable devices
DC-to-DC converters
Power management in battery-driven
portables
Hard disk and computing power
management
1.4 Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
V
GS
= 10 V; T
amb
= 25 °C; t
≤
5 s
V
GS
= 10 V; I
D
= 7 A; T
j
= 25 °C
[1]
Conditions
T
j
= 25 °C
Min
-
-20
-
-
Typ
-
-
-
16.5
Max
30
20
10.4
19.5
Unit
V
V
A
mΩ
Static characteristics
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
NXP Semiconductors
PMPB20EN
30 V N-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
7
8
Pinning information
Symbol Description
D
D
G
S
D
D
D
S
drain
drain
gate
source
drain
drain
drain
source
3
8
4
S
017aaa253
Simplified outline
Graphic symbol
D
1
7
2
6
5
G
Transparent top view
SOT1220 (DFN2020MD-6)
3. Ordering information
Table 3.
Ordering information
Package
Name
PMPB20EN
DFN2020MD-6
Description
plastic thermal enhanced ultra thin small outline package;
no leads; 6 terminals
Version
SOT1220
Type number
4. Marking
Table 4.
Marking codes
Marking code
1B
Type number
PMPB20EN
PMPB20EN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 16 May 2012
2 of 15
NXP Semiconductors
PMPB20EN
30 V N-channel Trench MOSFET
5. Limiting values
Table 5.
Symbol
V
DS
V
GS
I
D
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= 10 V; T
amb
= 25 °C; t
≤
5 s
V
GS
= 10 V; T
amb
= 25 °C
V
GS
= 10 V; T
amb
= 100 °C
I
DM
P
tot
peak drain current
total power dissipation
T
amb
= 25 °C; single pulse; t
p
≤
10 µs
T
amb
= 25 °C
T
amb
= 25 °C; t
≤
5 s
T
sp
= 25 °C
T
j
T
amb
T
stg
I
S
[1]
[1]
[1]
[1]
[1]
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
= 25 °C
Min
-
-20
-
-
-
-
-
-
-
-55
-55
-65
T
amb
= 25 °C
[1]
Max
30
20
10.4
7.2
4.6
30
1.7
3.5
12.5
150
150
150
2.2
Unit
V
V
A
A
A
A
W
W
W
°C
°C
°C
A
junction temperature
ambient temperature
storage temperature
source current
Source-drain diode
-
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
120
P
der
(%)
80
017aaa123
120
I
der
(%)
80
017aaa124
40
40
0
−75
−25
25
75
125
T
j
(°C)
175
0
−75
−25
25
75
125
T
j
(°C)
175
Fig 1.
Normalized total power dissipation as a
function of junction temperature
Fig 2.
Normalized continuous drain current as a
function of junction temperature
PMPB20EN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 16 May 2012
3 of 15
NXP Semiconductors
PMPB20EN
30 V N-channel Trench MOSFET
10
2
I
D
(A)
10
Limit R
DSon
= V
DS
/I
D
017aaa541
t
p
= 10 μs
t
p
= 100 μs
t
p
= 1 ms
1
t
p
= 10 ms
DC; T
sp
= 25 °C
10
-1
DC; T
amb
= 25 °C;
drain mounting pad 6 cm
2
10
-2
10
-1
t
p
= 100 ms
1
10
V
DS
(V)
10
2
I
DM
= single pulse
Fig 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
Conditions
in free air
[1]
[2]
[3]
Min
-
-
-
-
Typ
235
67
33
5
Max
270
74
36
10
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm
2
, t
≤
5 s
PMPB20EN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 16 May 2012
4 of 15
NXP Semiconductors
PMPB20EN
30 V N-channel Trench MOSFET
10
3
Z
th(j-a)
(K/W)
10
2
017aaa542
duty cycle = 1
0.75
0.5
0.33
0.2
0.25
0.1
0.05
10
0.01
0.02
0
1
10
-3
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 4.
10
3
Z
th(j-a)
(K/W)
10
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa543
duty cycle = 1
0.75
0.5
0.33
0.2
0.25
0.1
10
0.05
0
1
10
-3
0.02
0.01
10
-2
10
-1
10
2
t
p
(s)
10
3
1
10
FR4 PCB, mounting pad for drain 6 cm
2
Fig 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMPB20EN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 16 May 2012
5 of 15
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