Philips Semiconductors
Product specification
UHF power MOS transistor
BLF521
FEATURES
•
High power gain
•
Easy power control
•
Gold metallization
•
Good thermal stability
•
Withstands full load mismatch
•
Designed for broadband operation.
DESCRIPTION
PIN CONFIGURATION
ook, halfpage
1
2
3
g
MBB072
d
s
4
Top view
MSB007
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for communications
transmitter applications in the UHF
frequency range.
The transistor is encapsulated in a
4-lead, SOT172D studless package,
with a ceramic cap. All leads are
isolated from the mounting base.
PINNING - SOT172D
PIN
1
2
3
4
gate
drain
source
DESCRIPTION
source
Fig.1 Simplified outline and symbol.
CAUTION
This product is supplied in anti-static packing to prevent damage caused by
electrostatic discharge during transport and handling. For further information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at T
amb
= 25
°C
in a common source test circuit.
MODE OF OPERATION
CW, class-B
f
(MHz)
500
V
DS
(V)
12.5
P
L
(W)
2
G
p
(dB)
>10
η
D
(%)
>50
2003 Sep 02
2
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF521
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
V
DS
V
GS
I
D
P
tot
T
stg
T
j
PARAMETER
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation
storage temperature
junction temperature
T
mb
≤
25
°C
CONDITIONS
MIN.
−
−
−
−
−65
−
MAX.
40
±20
1
10
150
200
UNIT
V
V
A
W
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
R
th j-a
Note
1. Mounted on printed-circuit board; see Fig.12.
PARAMETER
thermal resistance from junction to mounting base
thermal resistance from junction to ambient; note1
VALUE
17.5
75
UNIT
K/W
K/W
handbook, halfpage
5
MRA989
handbook, halfpage
16
MDA486
ID
(A)
Ptot
(W)
12
(2)
1
(1)
(2)
(1)
8
4
0.1
1
10
VDS (V)
100
0
0
40
80
120
160
Tmb (
°C)
(1) Current in this area may be limited by R
DSon
.
(2) T
mb
= 25
°C.
(1) Continuous operation.
(2) Short-time operation during mismatch.
Fig.2 DC SOAR.
Fig.3 Power derating curves.
2003 Sep 02
3
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF521
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)DSS
I
DSS
I
GSS
V
GSth
g
fs
R
DSon
I
DSX
C
is
C
os
C
rs
PARAMETER
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
CONDITIONS
V
GS
= 0; I
D
= 3 mA
V
GS
= 0; V
DS
= 12.5 V
V
GS
=
±20
V; V
DS
= 0
I
D
= 3 mA; V
DS
= 10 V
I
D
= 0.3 A; V
DS
= 10 V
I
D
= 0.3 A; V
GS
= 15 V
V
GS
= 15 V; V
DS
= 10 V
V
GS
= 0; V
DS
= 12.5 V; f = 1 MHz
V
GS
= 0; V
DS
= 12.5 V; f = 1 MHz
V
GS
= 0; V
DS
= 12.5 V; f = 1 MHz
MIN.
40
−
−
2
80
−
−
−
−
−
TYP.
−
−
−
−
135
3.5
1.3
5.3
7.8
1.8
MAX.
−
10
1
4.5
−
4
−
−
−
−
UNIT
V
µA
µA
V
mS
Ω
A
pF
pF
pF
V
GS
group indicator
LIMITS
(V)
MIN.
A
B
C
D
E
F
G
H
J
K
L
M
N
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
MAX.
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
O
P
Q
R
S
T
U
V
W
X
Y
Z
LIMITS
(V)
MIN.
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
MAX.
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
GROUP
GROUP
2003 Sep 02
4
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF521
handbook, halfpage
15
MDA485
handbook, halfpage
1600
MDA484
T.C
(mV/K)
10
ID
(mA)
1200
5
800
0
400
−5
1
10
10
2
ID (A)
10
3
0
0
4
8
12
16
20
VGS (V)
V
DS
= 10 V.
V
DS
= 10 V
;
T
j
= 25
°C.
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values.
Fig.5
Drain current as a function of gate-source
voltage; typical values.
handbook, halfpage
5
MDA483
handbook, halfpage
30
MDA482
RDSon
(Ω)
4
C
(pF)
20
3
Cos
2
10
Cis
1
0
0
40
80
120
Tj (°C)
160
0
0
4
8
12
VDS (V)
16
I
D
= 0.3 A; V
GS
= 15 V.
V
GS
= 0; f = 1 MHz.
Fig.6
Drain-source on-state resistance as a
function of junction temperature; typical
values.
Fig.7
Input and output capacitance as functions
of drain-source voltage; typical values.
2003 Sep 02
5
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