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BLF546,112

Description
UHF push-pull power MOS transistor
CategoryDiscrete semiconductor    The transistor   
File Size87KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BLF546,112 Overview

UHF push-pull power MOS transistor

BLF546,112 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconduc
Parts packaging codeDFM
package instructionFLANGE MOUNT, R-CDFM-F4
Contacts2
Manufacturer packaging codeSOT268A
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionSOURCE
ConfigurationCOMMON SOURCE, 2 ELEMENTS
Minimum drain-source breakdown voltage65 V
Maximum drain current (Abs) (ID)9 A
Maximum drain current (ID)9 A
Maximum drain-source on-resistance0.6 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-CDFM-F4
Number of components2
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power consumption environment145 W
Minimum power gain (Gp)11 dB
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D092
BLF546
UHF push-pull power MOS
transistor
Product specification
Supersedes data of 1998 Jan 09
2003 Sep 22
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