DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
M3D075
BLF246B
VHF push-pull power MOS
transistor
Product specification
Supersedes data of 2001 Oct 10
2003 Aug 04
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
FEATURES
•
High power gain
•
Easy power control
•
Good thermal stability
•
Gold metallization ensures
excellent reliability.
APPLICATIONS
Large signal applications in the VHF
frequency range.
DESCRIPTION
Dual silicon N-channel enhancement
mode vertical D-MOS push-pull
transistor encapsulated in an 8-lead
SOT161A balanced flange package
with a ceramic cap. All leads are
isolated from the flange.
PINNING - SOT161A
PIN
1
2
3
4
5
6
7
8
DESCRIPTION
source
source
drain 1
gate 1
drain 2
gate 2
source
source
WARNING
Product and environmental safety - toxic materials
Fig.1 Simplified outline and symbol.
1
Top view
3
5
7
MBC826
MBB157
BLF246B
PIN CONFIGURATION
handbook, halfpage
2
4
6
8
d2
g2
g1
d1
s
CAUTION
This product is supplied in anti-static packing to prevent damage caused by
electrostatic discharge during transport and handling. For further information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°C
in a push-pull common source test circuit.
MODE OF OPERATION
CW, class-AB
f
(MHz)
175
V
DS
(V)
28
P
L
(W)
60
G
p
(dB)
>14
η
D
(%)
>55
2003 Aug 04
2
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
−
−
−
−65
−
MIN.
BLF246B
MAX.
UNIT
Per transistor section unless otherwise specified
V
DS
V
GS
I
D
P
tot
T
stg
T
j
drain-source voltage
gate-source voltage
drain current (DC)
storage temperature
junction temperature
65
±20
8
130
+150
200
V
V
A
W
°C
°C
total power dissipation T
mb
≤
25
°C
total device; both sections equally loaded
−
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
R
th mb-h
PARAMETER
thermal resistance from junction to
mounting base
CONDITIONS
total device; both sections equally
loaded
VALUE
1.35
0.25
UNIT
K/W
K/W
thermal resistance from mounting base total device; both sections equally
to heatsink
loaded
MRA932
handbook,
50
halfpage
MGR738
handbook, halfpage
160
ID
(A)
10
(1)
(2)
Ptot
(W)
120
(2)
80
1
40
(1)
10
−1
1
10
VDS (V)
10
2
0
0
40
80
120
Th (°C)
160
(1) Current in this area may be limited by R
DSon
.
(2) T
mb
= 25
°C.
Total device; both sections equally loaded.
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
Fig.2 DC SOAR.
Fig.3 Power derating curves.
2003 Aug 04
3
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
−
−
−
−
1.8
0.4
10
125
75
11
BLF246B
MAX.
−
2
1
4.5
−
0.75
−
−
−
−
UNIT
Per transistor section
V
(BR)DSS
I
DSS
I
GSS
V
GSth
g
fs
R
DSon
I
DSX
C
is
C
os
C
rs
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
V
GS
= 0; I
D
= 10 mA
V
GS
= 0; V
DS
= 28 V
V
GS
=
±20
V; V
DS
= 0
I
D
= 10 mA; V
DS
= 10 V
I
D
= 1.5 A; V
DS
= 10 V
I
D
= 1.5 A; V
GS
= 10 V
V
GS
= 10 V; V
DS
= 10 V
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
65
−
−
2
1.2
−
−
−
−
−
V
mA
µA
V
S
Ω
A
pF
pF
pF
V
GS
group indicator
LIMITS
(V)
MIN.
A
B
C
D
E
F
G
H
J
K
L
M
N
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
MAX.
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
O
P
Q
R
S
T
U
V
W
X
Y
Z
LIMITS
(V)
MIN.
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
MAX.
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
GROUP
GROUP
2003 Aug 04
4
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF246B
handbook, halfpage
6
MGR739
T.C.
(mV/K)
4
handbook, halfpage
12
MGR740
Tj = 25
°C
ID
(A)
8
125
°C
2
0
−2
−4
−6
10
4
10
2
10
3
ID (mA)
10
4
0
0
10
VGS (V)
20
V
DS
= 10 V.
V
DS
= 10 V.
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values per section.
Fig.5
Drain current as a function of gate-source
voltage; typical values per section.
MGR741
handbook, halfpage
0.8
handbook, halfpage
240
MGR742
RDSon
(Ω)
0.6
C
(pF)
180
0.4
120
Cis
0.2
60
Cos
0
0
40
80
120
Tj (°C)
160
0
0
10
20
30
VDS (V)
40
V
GS
= 10 V; I
D
= 1.5 A.
V
GS
= 0; f = 1 MHz.
Fig.6
Drain-source on-state resistance as a
function of junction temperature; typical
values per section.
Fig.7
Input and output capacitance as functions
of drain-source voltage; typical values per
section.
2003 Aug 04
5
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