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BLL6H0514L-130,112

Description
TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,18A I(D),SOT-1135A
CategoryDiscrete semiconductor    The transistor   
File Size123KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BLL6H0514L-130,112 Overview

TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,18A I(D),SOT-1135A

BLL6H0514L-130,112 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
Parts packaging codeDFM
Contacts2
Manufacturer packaging codeSOT1135A
Reach Compliance Codecompli
Base Number Matches1
BLL6H0514L-130;
BLL6H0514LS-130
LDMOS driver transistor
Rev. 2 — 13 September 2010
Product data sheet
1. Product profile
1.1 General description
130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz
range.
Table 1.
Application information
Typical RF performance at T
case
= 25
C; I
Dq
= 50 mA; in a class-AB application circuit.
Mode of operation
pulsed RF
f
(MHz)
960 to 1215
1200 to 1400
t
p
(s)
128
300
(%)
10
10
V
DS
(V)
50
50
P
L
(W)
130
130
G
p
(dB)
19
17
RL
in
(dB)
10
10
D
(%)
54
50
P
droop(pulse)
(dB)
0
0
t
r
(ns)
15
15
t
f
(ns)
8
8
1.2 Features and benefits
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (0.5 GHz to 1.4 GHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range

BLL6H0514L-130,112 Related Products

BLL6H0514L-130,112 BLL6H0514LS-130,11
Description TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,18A I(D),SOT-1135A TRANSISTOR LDMOS DRIVER SOT1135B
Brand Name NXP Semiconduc NXP Semiconduc
Is it Rohs certified? conform to conform to
Parts packaging code DFM DFM
Contacts 2 2
Manufacturer packaging code SOT1135A SOT1135B
Reach Compliance Code compli compli
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