BLS7G2729L-350P;
BLS7G2729LS-350P
LDMOS S-band radar power transistor
Rev. 1 — 24 May 2011
Objective data sheet
1. Product profile
1.1 General description
350 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 2.9 GHz
range.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
°
C; t
p
= 300
μ
s;
δ
= 10 %; I
Dq
= 200 mA; in a class-AB
production test circuit.
Mode of operation
pulsed RF
f
(GHz)
2.7 to 2.9
V
DS
(V)
32
P
L
(W)
350
G
p
(dB)
13.5
η
D
(%)
50
t
r
(ns)
20
t
f
(ns)
6
1.2 Features and benefits
Typical pulsed RF performance at a frequency of 2.7 GHz to 2.9 GHz, a supply voltage
of 32 V, an I
Dq
of 200 mA, a t
p
of 300
μs
with
δ
of 10 %:
Output power = 350 W
Power gain = 13.5 dB
Efficiency = 50 %
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for S-band operation (2.7 GHz to 2.9 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
S-band power amplifiers for radar applications in the 2.7 GHz to 2.9 GHz frequency
range
NXP Semiconductors
BLS7G2729L(S)-350P
LDMOS S-band radar power transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
1
2
3
4
5
[1]
Pinning
Description
drain1
drain2
gate1
gate2
source
drain1
drain2
gate1
gate2
source
[1]
[1]
Simplified outline
Graphic symbol
BLS7G2729L-350P (SOT539A)
1
2
5
2
3
4
3
sym112
1
BLS7G2729LS-350P (SOT539B)
1
2
5
3
4
2
3
sym112
1
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLS7G2729L-350P
-
flanged balanced LSMOST ceramic package;
2 mounting holes; 4 leads
earless flanged balanced LSMOST ceramic package;
4 leads
Version
SOT539A
SOT539B
Type number
BLS7G2729LS-350P -
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Min
-
−0.5
-
−65
-
Max
60
+13
33
+150
200
Unit
V
V
A
°C
°C
BLS7G2729L-350P_LS-350P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Objective data sheet
Rev. 1 — 24 May 2011
2 of 10
NXP Semiconductors
BLS7G2729L(S)-350P
LDMOS S-band radar power transistor
5. Thermal characteristics
Table 5.
Z
th(j-mb)
Thermal characteristics
Conditions
T
case
= 85
°C;
P
L
= 150 W
t
p
= 100
μs; δ
= 10 %
t
p
= 200
μs; δ
= 10 %
t
p
= 300
μs; δ
= 10 %
t
p
= 100
μs; δ
= 20 %
<tbd> K/W
<tbd> K/W
<tbd> K/W
<tbd> K/W
Typ
Unit
transient thermal impedance from junction
to mounting base
Symbol Parameter
6. Characteristics
Table 6.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
Conditions
V
GS
= 0 V; I
D
= 2.2 mA
V
DS
= 10 V; I
D
= 220 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 11.0 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 7.7 A
Min
65
1.5
-
34
-
-
-
Typ
-
1.9
-
39
-
16.2
0.065
Max
-
2.3
2.8
-
280
-
-
Unit
V
V
μA
A
nA
S
Ω
7. Application information
Table 7.
Application information
Mode of operation: pulsed RF; t
p
= 300
μ
s;
δ
= 10 %; RF performance at V
DS
= 32 V; I
Dq
= 200 mA;
T
case
= 25
°
C; unless otherwise specified, in a class-AB production circuit.
Symbol
P
L
V
CC
G
p
RL
in
P
L(1dB)
η
D
P
droop(pulse)
t
r
t
f
Parameter
output power
supply voltage
power gain
input return loss
output power at 1 dB gain compression
drain efficiency
pulse droop power
rise time
fall time
P
L
= 350 W
P
L
= 350 W
P
L
= 350 W
P
L
= 350 W
P
L
= 350 W
P
L
= 350 W
P
L
= 350 W
Conditions
Min Typ
-
-
12
-
-
45
-
-
-
350
-
13.5
−10
50
0
20
6
Max
-
32
-
-
-
0.3
50
50
Unit
W
V
dB
dB
W
%
dB
ns
ns
<tbd> -
BLS7G2729L-350P_LS-350P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Objective data sheet
Rev. 1 — 24 May 2011
3 of 10
NXP Semiconductors
BLS7G2729L(S)-350P
LDMOS S-band radar power transistor
Typical impedance
Z
S
Ω
<tbd>
<tbd>
<tbd>
Z
L
Ω
<tbd>
<tbd>
<tbd>
Table 8.
f
GHz
2.7
2.8
2.9
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
7.1 Ruggedness in class-AB operation
The BLS7G2729L-350P and BLS7G2729LS-350P are capable of withstanding a load
mismatch corresponding to VSWR = 5 : 1 through all phases under the following
conditions: V
DS
= 32 V; I
Dq
= 200 mA; P
L
= 350 W; t
p
= 300
μs; δ
= 10 %.
BLS7G2729L-350P_LS-350P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Objective data sheet
Rev. 1 — 24 May 2011
4 of 10
NXP Semiconductors
BLS7G2729L(S)-350P
LDMOS S-band radar power transistor
8. Package outline
Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads
SOT539A
D
A
F
D1
U1
q
H1
C
B
w2
M
C
M
c
1
2
H U2
p
E1
w1
M
A
M
B
M
E
5
L
A
3
b
e
4
w3
M
Q
0
5
scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
mm
inches
A
4.7
4.2
b
c
D
D1
e
E
E1
9.53
9.27
F
H
H1
L
p
3.30
3.05
Q
2.26
2.01
q
35.56
U1
U2
w1
w2
0.51
w3
0.25
11.81 0.18 31.55 31.52
9.50
13.72
11.56 0.10 30.94 30.96
9.30
1.75 17.12 25.53 3.48
1.50 16.10 25.27 2.97
41.28 10.29
0.25
41.02 10.03
0.185 0.465 0.007 1.242 1.241
0.374 0.375 0.069 0.674 1.005 0.137 0.130 0.089
1.625 0.405
1.400
0.010 0.020 0.010
0.540
0.165 0.455 0.004 1.218 1.219
0.366 0.365 0.059 0.634 0.995 0.117 0.120 0.079
1.615 0.395
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
OUTLINE
VERSION
SOT539A
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
00-03-03
10-02-02
Fig 2.
Package outline SOT539A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
BLS7G2729L-350P_LS-350P
Objective data sheet
Rev. 1 — 24 May 2011
5 of 10
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