DISCRETE SEMICONDUCTORS
DATA SHEET
M3D381
BLF1046
UHF power LDMOS transistor
Product specification
Supersedes data of 2000 Oct 04
2000 Dec 20
Philips Semiconductors
Product specification
UHF power LDMOS transistor
FEATURES
•
High power gain
•
Easy power control
•
Excellent ruggedness
•
Source on underside eliminates DC isolators, reducing
common mode inductance
•
Designed for broadband operation (HF to 1 GHz).
APPLICATIONS
•
Communication transmitter applications in the UHF
frequency range.
3
1
BLF1046
PINNING - SOT467C
PIN
1
2
3
drain
gate
source, connected to flange
DESCRIPTION
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT467C) with a ceramic cap. The common source is
connected to the mounting flange.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°C
in the common source broadband test circuit.
MODE OF OPERATION
CW, class-AB (2-tone)
CW, class-AB (1-tone)
f
(MHz)
f
1
= 960; f
2
= 960.1
960
V
DS
(V)
26
26
P
L
(W)
45 (PEP)
45
2
Top view
MBK584
Fig.1 Simplified outline.
G
p
(dB)
>14
>14
η
D
(%)
>35
>46
d
im
(dBc)
≤−26
−
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
DS
V
GS
I
D
T
stg
T
j
drain-source voltage
gate-source voltage
drain current (DC)
storage temperature
junction temperature
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
PARAMETER
−
−
−
−65
−
MIN.
65
±20
4.5
+150
200
MAX.
V
V
A
°C
°C
UNIT
2000 Dec 20
2
Philips Semiconductors
Product specification
UHF power LDMOS transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-h
Note
PARAMETER
thermal resistance from junction to
heatsink
CONDITIONS
T
h
= 25
°C;
P
dis
= 97 W; note 1
VALUE
1.87
BLF1046
UNIT
K/W
1. Determined under specified RF operating conditions, based on maximum peak junction temperature.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
C
is
C
os
C
rs
PARAMETER
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
input capacitance
output capacitance
feedback capacitance
CONDITIONS
V
GS
= 0; I
D
= 0.7 mA
V
DS
= 10 V; I
D
= 70 mA
V
GS
= 0; V
DS
= 26 V
V
GS
= V
GSth
+ 9 V; V
DS
= 10 V
V
GS
=
±20
V; V
DS
= 0
V
DS
= 10 V; I
D
= 3.5 A
V
GS
= V
GSth
+ 9 V; I
D
= 3.5 A
V
GS
= 0; V
DS
= 26 V; f = 1 MHz
V
GS
= 0; V
DS
= 26 V; f = 1 MHz
V
GS
= 0; V
DS
= 26 V; f = 1 MHz
MIN.
65
4
−
12.5
−
−
−
−
−
−
TYP.
−
−
−
−
−
2
300
46
37
1.5
MAX.
−
5
1
−
125
−
−
−
−
−
UNIT
V
V
µA
A
nA
S
mΩ
pF
pF
pF
APPLICATION INFORMATION
RF performance in the common source class-AB broadband test circuit. T
h
= 25
°C;
R
th j-h
= 1.87 K/W,
unless otherwise specified.
MODE OF OPERATION
CW, class-AB (2-tone)
CW, class-AB (1-tone)
Ruggedness in class-AB operation
The BLF1046 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: V
DS
= 26 V; f = 960 MHz at rated load power.
Tuning Procedure
For high gain and efficiency:
In CW mode (P
D
= 1 W; f = 960 MHz) tune C2 and C16 (see Figs. 13 and 14) until IRL <
−15
dB, then adjust C6 and C8
for high gain until G
p
> 14 dB at P
L
= 50 W.
For linear mode:
Tune for high gain and efficiency mode, then apply two tone signal (f
1
= 960 MHz; f
2
= 960.1 MHz) at P
L
= 45 W (PEP)
and tune first C2 and then C6 and C8 for lowest d
3
(below
−28
dBc).
f
(MHz)
f
1
= 960; f
2
= 960.1
960
V
DS
(V)
26
26
I
DQ
(mA)
300
300
P
L
(W)
45 (PEP)
45
G
p
(dB)
>14
>14
η
D
(%)
>35
>46
d
im
(dBc)
≤−26
−
2000 Dec 20
3
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1046
handbook, halfpage
20
MLD455
80
η
D
(%)
60
handbook, halfpage
20
MLD456
80
η
D
Gp
η
D
(%)
60
Gp
(dB)
15
Gp
η
D
PAE
Gp
(dB)
15
10
40
10
40
5
20
5
20
0
0
20
40
PL (W)
60
0
0
0
20
40
60
PL (W)
80
0
V
DS
= 26 V; I
DQ
= 330 mA; T
h
≤
25
°C;
f = 960 MHz;
tuned for high efficiency; see tuning procedure.
V
DS
= 26 V; I
DQ
= 330 mA; T
h
≤
25
°C;
f = 960 MHz;
tuned for high linearity; see tuning procedure
Fig.2
Power gain and drain efficiency as functions
of load power; typical values.
Fig.3
Power gain and drain efficiency as functions
of load power; typical values.
handbook, halfpage
20
MLD457
80
η
D
(3)
(1)
(2)
handbook, halfpage
0
MLD458
Gp
(dB)
15
d3
(dB)
−20
(%)
60
(1)
10
40
−40
(2)
(3)
η
D
5
20
−60
0
0
10
20
30
50
40
PL (PEP) (W)
0
−80
0
10
20
30
50
40
PL (PEP) (W)
V
DS
= 26 V; T
h
≤
25
°C;
f
1
= 960 MHz; f
2
= 960.1 MHz;
tuned for high linearity; see tuning procedure.
(1) I
DQ
= 240 mA.
(2) I
DQ
= 300 mA.
(3) I
DQ
= 400 mA.
V
DS
= 26 V; T
h
≤
25
°C;
f
1
= 960 MHz; f
2
= 960.1 MHz;
tuned for high linearity; see tuning procedure.
(1) I
DQ
= 240 mA.
(2) I
DQ
= 300 mA.
(3) I
DQ
= 400 mA.
Fig.5
Fig.4
Power gain and drain efficiency as functions
of peak envelope power; typical values.
Third order intermodulation distortion as a
function of peak envelope load power;
typical values.
2000 Dec 20
4
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1046
handbook, halfpage
0
MLD459
handbook, halfpage
0
MLD460
d5
(dBc)
−20
d7
(dBc)
−20
−40
(1)
(3)
−40
(1)
(3)
−60
(2)
−60
(2)
−80
0
10
20
30
50
40
PL (PEP) (W)
−80
0
10
20
30
50
40
PL (PEP) (W)
V
DS
= 26 V; T
h
≤
25
°C;
f
1
= 960 MHz; f
2
= 960.1 MHz;
tuned for high linearity; see tuning procedure.
(1) I
DQ
= 240 mA.
(2) I
DQ
= 300 mA.
(3) I
DQ
= 400 mA.
V
DS
= 26 V; T
h
≤
25
°C;
f
1
= 960 MHz; f
2
= 960.1 MHz;
tuned for high linearity; see tuning procedure.
(1) I
DQ
= 240 mA.
(2) I
DQ
= 300 mA.
(3) I
DQ
= 400 mA.
Fig.6
Fifth order intermodulation distortion as a
function of peak envelope load power;
typical values.
Fig.7
Seventh order intermodulation distortion as
a function of peak envelope load power;
typical values.
handbook, halfpage
10
MLD461
handbook, halfpage
20
MLD462
40
η
Gp
(%)
30
EVM
(%)
8
peak
Gp
(dB)
15
6
10
4
5
EVM
(%)
0
0
4
8
12
16
PL (W)
20
0
4
η
20
rms
2
10
EVM
0
8
12
16
PL (W)
20
0
V
DS
= 26 V; I
DQ
= 300 mA; T
h
≤
25
°C;
f = 960 MHz;
tuned for high linearity; see tuning procedure.
V
DS
= 26 V; I
DQ
= 300 mA; T
h
≤
25
°C;
f = 960 MHz;
tuned for high linearity; see tuning procedure.
Fig.8
Error vector magnitude (EVM) / EDGE
8PSK as a functions of load power; typical
values.
Fig.9
EDGE 8PSK EVM, gain and efficiency as
functions of load power; typical values.
2000 Dec 20
5
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