BLF6G22L-40P;
BLF6G22LS-40P
Power LDMOS transistor
Rev. 1 — 22 September 2011
Product data sheet
1. Product profile
1.1 General description
LDMOS power transistor for base station applications at frequencies from 2110 MHz to
2170 MHz and 1805 MHz to 1880 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
1-carrier W-CDMA
f
(MHz)
2110 to 2170
1805 to 1880
[1]
2110 to 2170
1805 to 1880
[1]
[1]
[2]
[3]
I
Dq
(mA)
410
410
410
410
V
DS
(V)
28
28
28
28
P
L(AV)
(W)
13.5
5
15
5
G
p
(dB)
19
20.3
19
20.5
D
(%)
30
18.3
32
18.0
ACPR
(dBc)
30
[2]
34.9
[2]
37
[3]
42.3
[3]
The performance is tested on the Class AB demo board as depicted in
Figure 11.
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low R
th
providing excellent thermal stability
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifier for base stations and multi carrier applications in the 2110 MHz to
2170 MHz frequency band
RF driver amplifier in the 1805 MHz to 1880 MHz frequency band
NXP Semiconductors
BLF6G22L-40P; BLF6G22LS-40P
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain1
drain2
gate1
gate2
source
[1]
Simplified outline
Graphic symbol
BLF6G22L-40P (SOT1121A)
1
2
1
3
5
3
4
2
sym117
5
4
BLF6G22LS-40P (SOT1121B)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
[1]
1
2
1
5
3
5
4
3
4
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF6G22L-40P
BLF6G22LS-40P
-
-
flanged LDMOST ceramic package; 2 mounting holes;
4 leads
earless flanged LDMOST ceramic package; 4 leads
Version
SOT1121A
SOT1121B
Type number
4. Limiting values
Table 4.
Limiting values (2 sections combined)
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
0.5
-
65
-
Max
65
+13
16
+150
200
Unit
V
V
A
C
C
BLF6G22L-40P_6G22LS-40P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 22 September 2011
2 of 16
NXP Semiconductors
BLF6G22L-40P; BLF6G22LS-40P
Power LDMOS transistor
5. Thermal characteristics
Table 5.
Symbol
R
th(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
C;
P
L
= 40 W
Typ
0.7
Unit
K/W
6. Characteristics
Table 6.
Characteristics (per section)
T
j
= 25
C; unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
Conditions
V
GS
= 0 V; I
D
= 0.4 mA
V
DS
= 10 V; I
D
= 40 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 2.0 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 1.4 A
Min Typ
65
1.4
-
6
-
1.8
-
1.9
-
7
-
2.9
Max Unit
-
2.4
2
-
200
-
V
V
A
A
nA
S
0.14 0.37
0.57
7. Application information
Table 7.
Application information (2 sections combined)
Mode of operation: 2-carrier W-CDMA; PAR 8.4 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 64 DPCH; f
1
= 2112.5 MHz; f
2
= 2117.5 MHz; f
3
= 2162.5 MHz; f
4
= 2167.5 MHz;
RF performance at V
DS
= 28 V; I
Dq
= 410 mA; T
case
= 25
C; in a class-AB production test circuit.
Symbol
G
p
RL
in
D
ACPR
5M
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio (5 MHz)
Conditions
P
L(AV)
= 13.5 W
P
L(AV)
= 13.5 W
P
L(AV)
= 13.5 W
P
L(AV)
= 13.5 W
[1]
[1]
[1]
[1]
[1]
Min Typ
17.8 19
-
-
-
15
30
39
26.5 30
Max Unit
-
9
-
27
36
dB
dB
%
dBc
dBc
ACPR
10M
adjacent channel power ratio (10 MHz) P
L(AV)
= 13.5 W
[1]
In production, all testing are only performed at 2110 MHz to 2170 MHz frequency band.
7.1 Ruggedness in class-AB operation
The BLF6G22L-40P and BLF6G22LS-40P are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
DS
= 28 V; I
Dq
= 410 mA; P
L
= 40 W (CW); f = 2110 MHz.
The BLF6G22L-40P and BLF6G22LS-40P are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
DS
= 28 V; I
Dq
= 410 mA; P
L
= 40 W (CW pulse, 10 %); f = 1842 MHz.
BLF6G22L-40P_6G22LS-40P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 22 September 2011
3 of 16
NXP Semiconductors
BLF6G22L-40P; BLF6G22LS-40P
Power LDMOS transistor
7.2 CW
aaa-000328
30
G
p
(dB)
20
G
p
60
η
D
(%)
40
(1)
(2)
(3)
10
(1)
(2)
(3)
20
η
D
0
28
36
44
52
0
P
L
(dBm)
V
DS
= 28 V; I
Dq
= 410 mA.
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
Fig 1.
Power gain and drain efficiency as function of load power; typical values
BLF6G22L-40P_6G22LS-40P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 22 September 2011
4 of 16
NXP Semiconductors
BLF6G22L-40P; BLF6G22LS-40P
Power LDMOS transistor
7.3 IS-95
Single carrier IS-95; PAR = 9.7 dB at 0.01 % probability on the CCDF.
22
G
p
(dB)
20
G
p
18
(1)
(2)
(3)
aaa-000329
50
η
D
(%)
40
-20
ACPR
885
(dBc)
-40
aaa-000330
-20
ACPR
1980
(dBc)
-40
30
ACPR
885
(1)
(2)
(3)
16
η
D
14
(1)
(2)
(3)
20
-60
10
(1)
(2)
(3)
ACPR
1980
-60
12
28
32
36
40
44
48
P
L
(dBm)
0
-80
28
32
36
40
44
48
P
L
(dBm)
-80
V
DS
= 28 V; I
Dq
= 410 mA.
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
V
DS
= 28 V; I
Dq
= 410 mA.
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
Fig 2.
Single carrier IS-95 power gain and drain
efficiency as function of output power; typical
values
Fig 3.
Single carrier IS-95 adjacent channel power
ratio as a function of output power;
typical values
BLF6G22L-40P_6G22LS-40P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 22 September 2011
5 of 16
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