BLF3G21-6
UHF power LDMOS transistor
Rev. 01 — 25 June 2008
Product data sheet
1. Product profile
1.1 General description
6 W LDMOS power transistor for base station applications at frequencies from
HF to 2200 MHz
Table 1.
Typical class-AB RF performance
I
Dq
= 90 mA; T
h
= 25
°
C in a common source test circuit.
Mode of operation
CW
Two-tone
f
(MHz)
2000
2000
P
L
(W)
7
6
<2
Table 2.
Typical class-A RF performance
I
Dq
= 200 mA; T
h
= 25
°
C in a modified PHS test fixture.
Mode of operation
PHS
f
(MHz)
1880 to 1920
P
L(AV)
(W)
2
G
p
(dB)
16
η
D
(%)
20
ACPR
600k
(dBc)
−75
G
p
(dB)
12.5
15.5
15.8
η
D
(%)
43
39
-
IMD3
(dB)
-
−32
<
−50
P
L(1dB)
(W)
7
-
-
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I
Excellent back-off linearity
I
Typical PHS performance at a supply voltage of 26 V and I
Dq
of 200 mA:
N
Average output power = 2 W
N
Power gain = 16 dB
N
Efficiency = 20 %
N
ACPR
600k
=
−75
dBc
I
Easy power control
I
Excellent ruggedness
I
High power gain
I
Excellent thermal stability
I
Designed for broadband operation (HF to 2200 MHz)
NXP Semiconductors
BLF3G21-6
UHF power LDMOS transistor
I
No internal matching for broadband operation
I
ESD protection
1.3 Applications
I
RF power amplifiers for GSM, PHS, EDGE, CDMA and W-CDMA base stations and
multicarrier applications in the HF to 2200 MHz frequency range
I
Broadcast drivers
2. Pinning information
Table 3.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
1
Graphic symbol
1
3
2
3
sym112
2
[1]
Connected to flange.
3. Ordering information
Table 4.
Ordering information
Package
Name
BLF3G21-6
-
Description
ceramic surface-mounted package; 2 leads
Version
SOT538A
Type number
4. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
−0.5
-
−65
-
Max
65
±13
2.3
+200
200
Unit
V
V
A
°C
°C
BLF3G21-6_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 June 2008
2 of 12
NXP Semiconductors
BLF3G21-6
UHF power LDMOS transistor
5. Thermal characteristics
Table 6.
R
th(j-c)
[1]
Thermal characteristics
Conditions
T
h
= 25
°C;
P
L(AV)
= 15 W
[1]
Symbol Parameter
thermal resistance from junction to case
Typ Unit
10
K/W
Thermal resistance is determined under specified RF operating conditions.
6. Characteristics
Table 7.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
C
rs
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
feedback capacitance
Conditions
V
DS
= 10 V; I
D
= 13 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 6 V;
V
DS
= 10 V
V
GS
=
±15
V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 0.5 A
V
GS
= 0 V; V
DS
= 28 V;
f = 1 MHz
Min Typ Max Unit
65
2.0
-
-
2.6
-
-
3.0
1
-
V
V
µA
A
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 0.13 mA
1.85 2.3
-
-
-
-
0.6
1.6
0.3
140 nA
-
-
S
pF
2.07
Ω
drain-source on-state resistance V
GS
= V
GS(th)
+ 9 V; I
D
= 0.5 A -
7. Application information
Table 8.
Application information
V
DS
= 26 V; T
h
= 25
°
C unless otherwise specified.
Symbol
G
p
RL
in
η
D
IMD3
Parameter
power gain
input return loss
drain efficiency
third order intermodulation
distortion
Conditions
P
L(PEP)
= 6 W
P
L(PEP)
= 6 W
P
L(PEP)
= 6 W
P
L(PEP)
= 6 W
P
L(PEP)
< 2 W
P
L
= P
L(1dB)
= 7 W
P
L
= P
L(1dB)
= 7 W
P
L(AV)
= 2 W
P
L(AV)
= 2 W
P
L(AV)
= 2 W
Min
14
-
35
-
-
-
-
-
-
-
Typ
15.5
−7
39
−32
<
−50
12.5
43
16
20
−75
Max
-
−3
-
−29
-
-
-
-
-
-
Unit
dB
dB
%
dBc
dBc
dB
%
dB
%
dBc
Mode of operation: Two-tone CW (100 kHz tone spacing); f = 2000 MHz; I
Dq
= 90 mA
Mode of operation: one-tone CW; f = 2000 MHz; I
Dq
= 90 mA
G
p
η
D
G
p
η
D
ACPR
600k
power gain
drain efficiency
power gain
drain efficiency
adjacent channel power
ratio (600 kHz)
Mode of operation: PHS; f = 1900 MHz; I
Dq
= 200 mA
BLF3G21-6_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 June 2008
3 of 12
NXP Semiconductors
BLF3G21-6
UHF power LDMOS transistor
7.1 Ruggedness in class-AB operation
The BLF3G21-6 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 26 V;
f = 2200 MHz at rated load power.
15
G
p
(dB)
13
001aai224
50
η
d
(%)
40
001aai225
11
30
9
20
7
10
5
10
−2
10
−1
1
P
L(CW)
(W)
10
0
10
−2
10
−1
1
P
L(CW)
(W)
10
V
DS
= 26 V; I
Dq
= 90 mA; T
h
= 25
°C;
f = 2000 MHz.
V
DS
= 26 V; I
Dq
= 90 mA; T
h
= 25
°C;
f = 2000 MHz.
Fig 1.
Power gain as a function of CW load power;
typical values
18
001aai226
Fig 2.
Drain efficiency as a function of
CW load power; typical values
0
001aai227
G
p
(dB)
16
G
p
14
η
D
(%)
50
60
IMD
(dBc)
−20
40
12
30
−40
IMD3
IMD5
10
η
D
8
20
−60
10
IMD7
6
10
−1
1
P
L(PEP)
(W)
0
10
−80
10
−1
1
P
L(PEP)
(W)
10
V
DS
= 26 V; I
Dq
= 90 mA; T
h
≤
25
°C;
f
1
= 2000 MHz;
f
2
= 2000.1 MHz.
V
DS
= 26 V; I
Dq
= 90 mA; T
h
≤
25
°C;
f
1
= 2000 MHz;
f
2
= 2000.1 MHz.
Fig 3.
Two-tone power gain and drain efficiency as
function of peak envelope load power;
typical values
Fig 4.
Two-tone intermodulation distortion as a
function of peak envelope load power;
typical values
BLF3G21-6_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 June 2008
4 of 12
NXP Semiconductors
BLF3G21-6
UHF power LDMOS transistor
−10
ACPR
(dB)
−50
001aai228
192 kHz
channel BW
−ACPR
300k
at
192 kHz BW
+ACPR
300k
at
192 kHz BW
25
C
(pF)
20
001aai229
15
−ACPR
900k
at
192 kHz BW
−90
C
oss
5
−ACPR
600k
at
192 kHz BW
−130
−1
−0.5
0
+ACPR
600k
at
192 kHz BW
0
0.5
∆f
(MHz)
1
0
10
20
30
V
DS
(V)
40
C
rss
+ACPR
900k
at
192 kHz BW
10
C
iss
V
DS
= 26 V; I
Dq
= 200 mA; T
h
≤
25
°C;
f
c
= 1900 MHz;
P
L(AV)
= 2 W.
Fig 5.
ACPR performance under PHS conditions,
measured in application board.
10
001aai230
Fig 6.
C
iss
, C
rss
and C
oss
as function of drain supply
voltage; typical values.
11
001aai231
Z
i
(Ω)
9
Z
L
(Ω)
9
X
L
8
X
i
7
7
6
R
i
5
5
R
L
4
1.8
1.85
1.9
1.95
f (GHz)
2
3
1.8
1.85
1.9
1.95
f (GHz)
2
V
DS
= 26 V; I
Dq
= 90 mA; P
L
= 45 W; T
h
≤
25
°C.
V
DS
= 26 V; I
Dq
= 90 mA; P
L
= 45 W; T
h
≤
25
°C.
Fig 7.
Input impedance as a function of frequency
(series components); typical values
Fig 8.
Load impedance as a function of frequency
(series components); typical values
BLF3G21-6_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 June 2008
5 of 12
京公网安备 11010802033920号
EEWORLD
