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BLF7G20L-250P,118

Description
Power LDMOS transistor
CategoryDiscrete semiconductor    The transistor   
File Size522KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BLF7G20L-250P,118 Overview

Power LDMOS transistor

BLF7G20L-250P,118 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconductor
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSOT
Contacts2
Manufacturer packaging codeSOT539A
Reach Compliance Codecompliant
BLF7G20L-250P;
BLF7G20LS-250P
Power LDMOS transistor
Rev. 3 — 1 March 2011
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power transistor for base station applications at frequencies from
1805 MHz to 1880 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
(MHz)
1805 to 1880
I
Dq
(mA)
1900
V
DS
(V)
28
P
L(AV)
(W)
70
G
p
(dB)
18
D
(%)
35
ACPR
(dBc)
29.5
[1]
Test signal: 3GPP; test model 1;64 DPCH; PAR = 8.4 dB at 0.01% probability on CCDF.
1.2 Features and benefits
Excellent ruggedness
High-efficiency
Low R
th
providing excellent thermal stability
Designed for broadband operation (1805 MHz to 1880 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.3 Applications
RF power amplifiers for W-CDMA base stations and multicarrier applications in the
1805 MHz to 1880 MHz frequency range

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Reach Compliance Code compliant compli
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