BLF3G21-30
UHF power LDMOS transistor
Rev. 01 — 14 February 2007
Product data sheet
1. Product profile
1.1 General description
30 W LDMOS power transistor for base station applications at frequencies from
HF to 2200 MHz.
Table 1.
Typical class-AB RF performance
I
Dq
= 450 mA; T
h
= 25
°
C in a common source test circuit.
Mode of operation
CW
Two-tone
f
(MHz)
2000
2000
P
L
(W)
36
30
0.1 to 10
Table 2.
Typical class-A RF performance
I
Dq
= 1 A; T
h
= 25
°
C in a modified PHS test fixture.
Mode of operation
PHS
f
(MHz)
1880 to 1920
P
L(AV)
(W)
9
G
p
(dB)
16
η
D
(%)
20
ACPR
600
(dBc)
−75
G
p
(dB)
12.5
13.5
13.8
η
D
(%)
43
35
-
IMD3
(dB)
-
−26
P
L(1dB)
(W)
36
-
<
−50
-
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I
Excellent back-off linearity
I
Typical PHS performance at a supply voltage of 26 V and I
Dq
of 1 A:
N
Average output power = 9 W
N
Gain = 16 dB (typ)
N
Efficiency = 20 %
N
ACPR
600
=
−75
dBc
I
Easy power control
I
Excellent ruggedness
I
High power gain
I
Excellent thermal stability
I
Designed for broadband operation (HF to 2200 MHz)
NXP Semiconductors
BLF3G21-30
UHF power LDMOS transistor
I
No internal matching for broadband operation
I
ESD protection
1.3 Applications
I
RF power amplifiers for GSM, PHS, EDGE, CDMA and W-CDMA base stations and
multicarrier applications in the HF to 2200 MHz frequency range
I
Broadcast drivers
2. Pinning information
Table 3.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
1
3
2
Symbol
1
2
3
sym112
[1]
Connected to flange
3. Ordering information
Table 4.
Ordering information
Package
Name
BLF3G21-30
-
Description
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
Version
SOT467C
Type number
4. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
-
-
−65
-
Max
65
±15
4.5
+150
200
Unit
V
V
A
°C
°C
BLF3G21-30_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 14 February 2007
2 of 12
NXP Semiconductors
BLF3G21-30
UHF power LDMOS transistor
5. Thermal characteristics
Table 6.
R
th(j-c)
R
th(j-h)
[1]
[2]
Thermal characteristics
Conditions
T
h
= 25
°C;
P
L(AV)
= 15 W
[1]
[2]
Symbol Parameter
thermal resistance from junction to case
Typ Unit
1.6
2.1
K/W
K/W
thermal resistance from junction to heatsink T
h
= 25
°C;
P
L(AV)
= 15 W
Thermal resistance is determined under specified RF operating conditions
Depending on mounting condition in application
6. Characteristics
Table 7.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
C
rs
drain leakage current
drain cut-off current
gate leakage current
transfer conductance
drain-source on-state
resistance
feedback capacitance
Conditions
V
GS
= 0 V; I
D
= 0.7 mA
Min
65
2.0
-
9
-
-
-
-
Typ
-
-
-
-
-
3
0.3
1.7
Max Unit
-
3.0
5
-
11
-
-
-
V
V
µA
A
nA
S
Ω
pF
gate-source threshold voltage V
DS
= 10 V; I
D
= 70 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 9 V;
V
DS
= 10 V
V
GS
=
±15
V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 2.5 A
V
GS
= V
GS(th)
+ 9 V; I
D
= 2.5 A
V
GS
= 0 V; V
DS
= 28 V;
f = 1 MHz
7. Application information
Table 8.
Application information
V
DS
= 26 V; T
h
= 25
°
C unless otherwise specified.
Symbol
G
p
RL
in
η
D
IMD3
Parameter
power gain
input return loss
drain efficiency
third order intermodulation
distortion
Conditions
P
L(PEP)
= 30 W
P
L(PEP)
= 30 W
P
L(PEP)
= 30 W
P
L(PEP)
= 30 W
P
L(PEP)
< 10 W
P
L
= P
L(1dB)
= 36 W
P
L
= P
L(1dB)
= 36 W
P
L(AV)
= 9 W
P
L(AV)
= 9 W
Min
12.5
-
32
-
-
-
-
-
-
Typ
13.5
−16
35.0
−26
<
−50
12.5
43
16
20
Max
-
−11
-
−23
-
-
-
-
-
Unit
dB
dB
%
dBc
dBc
dB
%
dB
%
Mode of operation: Two-tone CW (100 kHz tone spacing); f = 2000 MHz; I
Dq
= 450 mA
Mode of operation: one-tone CW; f = 2000 MHz; I
Dq
= 450 mA
G
p
η
D
G
p
η
D
BLF3G21-30_1
power gain
drain efficiency
power gain
drain efficiency
Mode of operation: PHS; f = 1900 MHz; I
Dq
= 1 A
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 14 February 2007
3 of 12
NXP Semiconductors
BLF3G21-30
UHF power LDMOS transistor
7.1 Ruggedness in class-AB operation
The BLF3G21-30 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 26 V;
f = 2200 MHz at rated load power.
15
G
p
(dB)
13
001aaf790
50
η
d
(%)
40
001aaf791
11
30
9
20
7
10
5
10
−1
1
10
P
L
(W)
10
2
0
10
−1
1
10
P
L
(W)
10
2
V
DS
= 26 V; I
Dq
= 450 mA; T
h
= 25
°C;
f = 2000 MHz
V
DS
= 26 V; I
Dq
= 450 mA; T
h
= 25
°C;
f = 2000 MHz
Fig 1. Power gain as function of CW load power;
typical values
15
G
p
(dB)
13
G
p
001aaf792
Fig 2. Drain efficiency as function of CW load power;
typical values
0
IMD
(dBc)
−20
001aaf793
50
η
d
(%)
40
11
30
−40
9
20
IMD3
−60
7
η
D
10
IMD5
IMD7
5
10
−1
1
10
P
L(PEP)
(W)
0
10
2
−80
10
−1
1
10
P
L(PEP)
(W)
10
2
V
DS
= 26 V; I
Dq
= 450 mA; T
h
≤
25
°C;
f
1
= 2000 MHz; f
2
= 2000.1 MHz
V
DS
= 26 V; I
Dq
= 450 mA; T
h
≤
25
°C;
f
1
= 2000 MHz; f
2
= 2000.1 MHz
Fig 3. Two-tone power gain and drain efficiency as
functions of peak envelope load power; typical
values
Fig 4. Two-tone intermodulation distortion as function
of peak envelope load power; typical values
BLF3G21-30_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 14 February 2007
4 of 12
NXP Semiconductors
BLF3G21-30
UHF power LDMOS transistor
−10
(1)
001aaf794
10
2
C
oss
C
(pF)
10
C
iss
001aaf795
ACPR
(dB)
−50
(2)
(3)
C
rss
−90
(6)
(7)
1
(4)
(5)
−130
−1.0
−0.5
10
−1
0
0.5
∆f
(MHz)
1.0
0
10
20
30
40
50
V
DS
(V)
(1) 192 kHz channel bandwidth
(2)
−ACPR
300
at 192 kHz bandwidth
(3) +ACPR
300
at 192 kHz bandwidth
(4)
−ACPR
600
at 192 kHz bandwidth
(5) +ACPR
600
at 192 kHz bandwidth
(6)
−ACPR
900
at 192 kHz bandwidth
(7) +ACPR
900
at 192 kHz bandwidth
V
DS
= 26 V; I
Dq
= 1000 mA; T
h
≤
25
°C;
f
c
= 1900 MHz; P
L(AV)
= 9 W
Fig 5. ACPR performance under PHS conditions,
measured in application board
5
Z
i
(Ω)
4
001aaf796
Fig 6. C
iss
, C
rss
and C
oss
as functions of drain supply
voltage; typical values
6
Z
L
(Ω)
2
001aaf797
3
X
i
2
−2
R
L
X
L
1
R
i
0
1.8
1.9
2.0
2.1
f (GHz)
2.2
−6
1.8
1.9
2.0
2.1
f (GHz)
2.2
V
DS
= 26 V; I
Dq
= 450 mA; P
L
= 45 W; T
h
≤
25
°C
V
DS
= 26 V; I
Dq
= 450 mA; P
L
= 45 W; T
h
≤
25
°C
Fig 7. Input impedance as function of frequency
(series components); typical values
Fig 8. Load impedance as function of frequency
(series components); typical values
BLF3G21-30_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 14 February 2007
5 of 12
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