BLF6G22L-40BN
Power LDMOS transistor
Rev. 1 — 30 August 2010
Product data sheet
1. Product profile
1.1 General description
40 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1.
Typical performance
RF performance at T
case
= 25
°
C in a common source class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
(MHz)
2110 to 2170
V
DS
(V)
28
P
L(AV)
(W)
2.5
G
p
(dB)
19
η
D
(%)
16
ACPR
(dBc)
−50
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a
supply voltage of 28 V and an I
Dq
of 345 mA:
Average output power = 2.5 W
Power gain = 19 dB (typ)
Efficiency = 16 %
ACPR =
−50
dBc
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (2000 MHz to 2200 MHz)
Internally matched for ease of use
Integrated current sense
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
NXP Semiconductors
BLF6G22L-40BN
Power LDMOS transistor
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2000 MHz to 2200 MHz frequency range
2. Pinning information
Table 2.
Pin
1
2
3
4, 5
6, 7
Pinning
Description
drain
gate
source
sense drain
sense gate
2
6
7
3
[1]
Simplified outline
4
1
5
Graphic symbol
1
4, 5
2
3
6, 7
sym126
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF6G22L-40BN
-
flanged ceramic package; 2 mounting holes; 6 leads
Version
SOT1112A
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
V
GS(sense)
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
sense gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
−0.5
−0.5
−65
-
Max
65
+13
+9
+150
200
Unit
V
V
V
°C
°C
5. Thermal characteristics
Table 5.
Thermal characteristics
Conditions
Typ Unit
1.7
K/W
Symbol Parameter
R
th(j-case)
thermal resistance from junction to case T
case
= 80
°C;
P
L
= 12.5 W (CW)
BLF6G22L-40BN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 30 August 2010
2 of 13
NXP Semiconductors
BLF6G22L-40BN
Power LDMOS transistor
6. Characteristics
Table 6.
Characteristics
T
j
= 25
°
C per section; unless otherwise specified
Symbol Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
I
Dq
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
quiescent drain current
Conditions
V
GS
= 0 V; I
D
= 0.5 mA
V
DS
= 10 V; I
D
= 59 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 2.9 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 2.1 A
main transistor:
V
DS
= 28 V
sense transistor:
I
DS
= 7.43mA;
V
DS
= 26.7 V
Min
65
1.4
-
8.8
-
-
-
310
Typ
-
1.9
-
10
-
4.3
0.25
345
Max
-
2.4
1.5
-
150
-
-
380
Unit
V
V
μA
A
nA
S
Ω
mA
7. Test information
Table 7.
Application information
Mode of operation: 2-carrier W-CDMA; PAR 8.4 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1 to 64 PDPCH; f
1
= 2112.5 MHz; f
2
= 2117.5 MHz; f
3
= 2162.5 MHz; f
4
= 2167.5 MHz;
RF performance at V
DS
= 28 V; I
Dq
= 345 mA; T
case
= 25
°
C; unless otherwise specified; in a
class-AB production test circuit
Symbol
G
p
η
D
ACPR
PAR
O
[1]
Parameter
power gain
drain efficiency
adjacent channel power ratio
output peak-to-average ratio
Conditions
P
L(AV)
= 2.5 W
P
L(AV)
= 2.5 W
P
L(AV)
= 2.5 W
P
L(AV)
= 20 W
[1]
Min
13
−57
3.6
Typ
16
−50
4.0
Max
21.0
-
−45
4.8
Unit
dB
%
dBc
dB
17.8 19
Mode of operation: 1-carrier W-CDMA; PAR 7.2 dB at 0.01 % probability on CCDF; f = 2167.5 MHz.
7.1 Ruggedness in class-AB operation
The BLF6G22L-40BN is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 28 V;
I
Dq
= 345 mA; P
L
= 40 W (CW); f = 2140 MHz.
BLF6G22L-40BN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 30 August 2010
3 of 13
NXP Semiconductors
BLF6G22L-40BN
Power LDMOS transistor
7.2 2-Carrier W-CDMA with 5 MHz carrier spacing
20
G
p
(dB)
18
G
p
001aam457
50
η
D
(%)
40
0
ACPR
(dBc)
−10
001aam458
−20
16
η
D
14
20
−40
12
10
30
−30
ACPR
5M
ACPR
10M
−50
10
0
5
10
15
20
P
L
(W)
0
25
−60
0
5
10
15
20
P
L
(W)
25
V
DS
= 28 V; I
Dq
= 345 mA; f = 2140 MHz.
V
DS
= 28 V; I
Dq
= 345 mA; f = 2140 MHz.
Fig 1.
Power gain and drain efficiency as function of
load power; typical values
Fig 2.
ACPR at 5 MHz and at 10 MHz as function of
load power; typical values
7.3 2-Carrier W-CDMA with 10 MHz carrier spacing
20
G
p
(dB)
18
G
p
001aam459
50
η
D
(%)
40
0
ACPR
(dBc)
−10
001aam460
−20
16
η
D
14
20
−40
12
10
30
−30
ACPR
10M
ACPR
5M
−50
10
0
5
10
15
20
P
L
(W)
0
25
−60
0
5
10
15
20
P
L
(W)
25
V
DS
= 28 V; I
Dq
= 345 mA; f = 2140 MHz.
V
DS
= 28 V; I
Dq
= 345 mA; f = 2140 MHz.
Fig 3.
Power gain and drain efficiency as function of
load power; typical values
Fig 4.
ACPR at 5 MHz and at 10 MHz as function of
load power; typical values
BLF6G22L-40BN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 30 August 2010
4 of 13
NXP Semiconductors
BLF6G22L-40BN
Power LDMOS transistor
7.4 1-Carrier W-CDMA
20
G
p
(dB)
18
G
p
001aam461
50
η
D
(%)
40
−20
ACPR
(dBc)
−30
001aam462
ACPR
5M
16
η
D
14
30
−40
ACPR
10M
20
−50
12
10
−60
10
0
5
10
15
20
P
L
(W)
0
25
−70
0
5
10
15
20
P
L
(W)
25
V
DS
= 28 V; I
Dq
= 345 mA; f = 2140 MHz.
V
DS
= 28 V; I
Dq
= 345 mA; f = 2140 MHz.
Fig 5.
Power gain and drain efficiency as function of
load power; typical values
Fig 6.
ACPR at 5 MHz and at 10 MHz as function of
load power; typical values
8
PAR
7
001aam463
6
5
4
3
0
5
10
15
20
P
L
(W)
25
V
DS
= 28 V; I
Dq
= 345 mA; f = 2140 MHz.
Fig 7. Peak-to-average power ratio as a function of load power; typical values
BLF6G22L-40BN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 30 August 2010
5 of 13
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