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BLF6G27S-45,135

Description
S BAND, Si, N-CHANNEL, RF POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size125KB,16 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BLF6G27S-45,135 Overview

S BAND, Si, N-CHANNEL, RF POWER, MOSFET

BLF6G27S-45,135 Parametric

Parameter NameAttribute value
Source Url Status Check Date2013-06-14 00:00:00
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
Parts packaging codeDFM
Contacts2
Manufacturer packaging codeSOT608B
Reach Compliance Codecompli
Base Number Matches1
BLF6G27-45; BLF6G27S-45
WiMAX power LDMOS transistor
Rev. 03 — 15 December 2008
Product data sheet
1. Product profile
1.1 General description
45 W LDMOS power transistor for base station applications at frequencies from
2500 MHz to 2700 MHz.
Table 1.
Typical performance
RF performance at T
case
= 25
°
C in a class-AB production test circuit.
Mode of operation
1-carrier N-CDMA
[1]
[1]
[2]
f
(MHz)
2500 to 2700
V
DS
(V)
28
P
L(AV)
(W)
7
G
p
(dB)
18
η
D
(%)
24
ACPR
885k
(dBc)
−49
[2]
ACPR
1980k
(dBc)
−64
[2]
Single carrier N-CDMA with pilot, paging sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz.
Measured within 30 kHz bandwidth.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I
Typical 1-carrier N-CDMA performance (single carrier N-CDMA with pilot, paging, sync
and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on
CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and
an I
Dq
of 350 mA:
I
Qualified up to a maximum V
DS
operation of 32 V
I
Integrated ESD protection
I
Excellent ruggedness
I
High efficiency
I
Excellent thermal stability
I
Designed for broadband operation
I
Internally matched for ease of use
I
Low gold plating thickness on leads
I
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)

BLF6G27S-45,135 Related Products

BLF6G27S-45,135 BLF6G27-45,112 BLF6G27-45,135 BLF6G27S-45,118
Description S BAND, Si, N-CHANNEL, RF POWER, MOSFET S BAND, Si, N-CHANNEL, RF POWER, MOSFET S BAND, Si, N-CHANNEL, RF POWER, MOSFET S BAND, Si, N-CHANNEL, RF POWER, MOSFET
Brand Name NXP Semiconduc NXP Semiconductor NXP Semiconduc NXP Semiconduc
Is it Rohs certified? conform to conform to conform to conform to
Parts packaging code DFM DFM DFM DFM
Contacts 2 2 2 2
Manufacturer packaging code SOT608B SOT608A SOT608A SOT608B
Reach Compliance Code compli compliant compli compli
Base Number Matches 1 1 1 1
Source Url Status Check Date 2013-06-14 00:00:00 - 2013-06-14 00:00:00 2013-06-14 00:00:00
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