BLF7G27L-100;
BLF7G27LS-100
Power LDMOS transistor
Rev. 3 — 22 July 2011
Product data sheet
1. Product profile
1.1 General description
100 W LDMOS power transistor for base station applications at frequencies from
2500 MHz to 2700 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Mode of operation
IS-95
Single carrier W-CDMA
[1]
[2]
f
(MHz)
I
Dq
(mA)
V
DS
(V)
28
28
P
L(AV)
(W)
20
25
G
p
(dB)
18
17.5
D
(%)
28
30
ACPR
885k
ACPR
5M
(dBc)
45
[1]
-
(dBc)
-
41
[2]
2500 to 2700 900
2500 to 2700 900
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is 3.84
MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low R
th
providing excellent thermal stability
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the
2500 MHz to 2700 MHz frequency range.
NXP Semiconductors
BLF7G27L-100; BLF7G27LS-100
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
Graphic symbol
BLF7G27L-100 (SOT502A)
1
3
2
2
3
sym112
1
BLF7G27LS-100 (SOT502B)
1
2
3
drain
gate
source
[1]
1
3
2
2
1
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF7G27L-100
BLF7G27LS-100
-
-
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
earless flanged LDMOST ceramic package; 2 leads
Version
SOT502A
SOT502B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
0.5
-
65
-
Max
65
+13
28
+150
200
Unit
V
V
A
C
C
5. Thermal characteristics
Table 5.
Symbol
R
th(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
C;
P
L
= 100 W
Typ
0.25
Unit
K/W
BLF7G27L-100_7G27LS-100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 22 July 2011
2 of 14
NXP Semiconductors
BLF7G27L-100; BLF7G27LS-100
Power LDMOS transistor
6. Characteristics
Table 6.
Characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
Conditions
V
GS
= 0 V; I
D
= 1 mA
V
DS
= 10 V; I
D
= 153 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 153 mA
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 5.35 A
Min
65
1.5
-
Typ
-
1.8
-
Max Unit
-
2.3
5
-
500
-
-
V
V
A
A
nA
S
25.1 29
-
-
-
-
1.34
0.1
7. Test information
Remark:
All testing performed in a class-AB production test circuit.
Table 7.
Functional test information
Mode of operation: 1-carrier N-CDMA, single carrier IS-95 with pilot, paging, sync and 6 traffic
channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF, channel bandwidth
is 1.2288 MHz; f
1
= 2500 MHz; f
2
= 2700 MHz; RF performance at V
DS
= 28 V; I
Dq
= 900 mA;
T
case
= 25
C; unless otherwise specified.
Symbol
P
L(AV)
G
p
RL
in
D
ACPR
885k
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio (885 kHz)
Conditions
Min Typ Max Unit
-
-
24
-
20
-
-
-
W
dB
dB
%
dBc
16.3 18
28
10
-
45 40
7.1 Ruggedness in class-AB operation
The BLF7G27L-100 and BLF7G27LS-100 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
DS
= 28 V; I
Dq
= 900 mA; P
L
= 100 W (CW); f = 2500 MHz.
BLF7G27L-100_7G27LS-100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 22 July 2011
3 of 14
NXP Semiconductors
BLF7G27L-100; BLF7G27LS-100
Power LDMOS transistor
7.2 Single carrier IS-95
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13).
PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
19
G
p
(dB)
001aan538
40
η
D
(%)
001aan539
(3)
30
(1)
(2)
(3)
18
(2)
20
17
(1)
10
16
0
10
20
P
L(AV)
(W)
30
0
0
10
20
P
L(AV)
(W)
30
V
DS
= 28 V; I
Dq
= 900 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
V
DS
= 28 V; I
Dq
= 900 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 1.
Single carrier IS-95 power gain as a function of
average output power; typical values
Fig 2.
Single carrier IS-95 drain efficiency as a
function of average output power;
typical values
BLF7G27L-100_7G27LS-100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 22 July 2011
4 of 14
NXP Semiconductors
BLF7G27L-100; BLF7G27LS-100
Power LDMOS transistor
−30
ACPR
885k
(dBc)
−40
001aan540
−50
ACPR
1980k
(dBc)
−60
001aan541
(1)
−50
(2)
(3)
(1)
(2)
(3)
−70
−60
−70
0
10
20
P
L(AV)
(W)
30
−80
0
10
20
P
L(AV)
(W)
30
V
DS
= 28 V; I
Dq
= 900 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
V
DS
= 28 V; I
Dq
= 900 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 3.
Single carrier IS-95 ACPR at 885 kHz as a
function of average output power;
typical values
Fig 4.
Single carrier IS-95 ACPR at 1980 kHz as a
function of average output power;
typical values
10
PAR
(dB)
9
(1)
(2)
(3)
001aan542
160
P
L(M)
(W)
120
001aan543
(1)
(2)
(3)
8
80
7
40
6
0
10
20
P
L(AV)
(W)
30
0
0
10
20
P
L(AV)
(W)
30
V
DS
= 28 V; I
Dq
= 900 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
V
DS
= 28 V; I
Dq
= 900 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 5.
Single carrier IS-95 peak-to-average power
ratio as a function of average output power;
typical values
Fig 6.
Single carrier IS-95 peak output power as a
function of average output power;
typical values
BLF7G27L-100_7G27LS-100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 22 July 2011
5 of 14
京公网安备 11010802033920号
EEWORLD
