BLF6G15L-40RN;
BLF6G15LS-40RN
Power LDMOS transistor
Rev. 2 — 14 May 2012
Product data sheet
1. Product profile
1.1 General description
40 W LDMOS power transistor for base station applications at frequencies from
1450 MHz to 1550 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a class-AB production test circuit.
Test signal
2-carrier W-CDMA
[1]
f
(MHz)
1476 to 1511
V
DS
(V)
28
P
L(AV)
(W)
2.5
G
p
(dB)
22.5
D
(%)
13.5
ACPR
(dBc)
45
[1]
Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at probability of 0.01 % on CCDF carrier;
carrier spacing 5 MHz.
1.2 Features and benefits
Typical 2-carrier W-CDMA performance at frequencies of 1476 MHz and 1511 MHz,
a supply voltage of 28 V and an I
Dq
of 375 mA:
Average output power = 2.5 W
Power gain = 22.5 dB
Efficiency = 13.5 %
ACPR =
45
dBc
Easy power control
Integrated ESD protection
Enhanced ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1450 MHz to 1550 MHz)
Internally matched for ease of use
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC.
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
1450 MHz to 1550 MHz frequency range
NXP Semiconductors
BLF6G15L(S)-40RN
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
Graphic symbol
BLF6G15L-40RN (SOT1135A)
1
2
3
2
3
sym112
1
BLF6G15LS-40RN (SOT1135B)
1
2
3
drain
gate
source
[1]
1
2
3
2
1
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF6G15L-40RN
BLF6G15LS-40RN
-
-
flanged ceramic package; 2 mounting holes; 2 leads
earless flanged ceramic package; 2 leads
Version
SOT1135A
SOT1135B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
-
Max
65
+11
+150
200
Unit
V
V
C
C
5. Thermal characteristics
Table 5.
Symbol
Thermal characteristics
Parameter
Conditions
Typ Unit
1.30 K/W
R
th(j-case)
thermal resistance from junction to case T
case
= 80
C;
P
L
= 2.5 W (CW)
BLF6G15L-40RN_6G15LS-40RN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 14 May 2012
2 of 12
NXP Semiconductors
BLF6G15L(S)-40RN
Power LDMOS transistor
6. Characteristics
Table 6.
Characteristics
T
j
= 25
C per section; unless otherwise specified
Symbol Parameter
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
Conditions
V
GS
= 0 V; I
D
= 0.59 mA
V
DS
= 10 V; I
D
= 59 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 58.9 mA
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 2.06 A
Min
65
1.4
-
-
-
-
-
Typ
-
1.8
-
9.4
-
0.5
Max
-
2.4
1.4
-
140
-
Unit
V
V
A
A
nA
S
0.32 -
7. Application information
Table 7.
2-carrier W-CDMA RF performance
Class-AB production test circuit; PAR 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz;
3GPP test model 1; 64 DPCH; f
1
= 1476 MHz; f
2
= 1511 MHz; RF performance at V
DS
= 28 V;
I
Dq
= 375 mA; T
case
= 25
C; unless otherwise specified.
Symbol
P
L(AV)
G
p
RL
in
D
ACPR
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio
P
L(AV)
= 2.5 W
P
L(AV)
= 2.5 W
P
L(AV)
= 2.5 W
P
L(AV)
= 2.5 W
Conditions
Min
-
19.8
-
11.5
-
Typ
2.5
22.5
16
13.5
45
Max
-
-
11
-
40
Unit
W
dB
dB
%
dBc
7.1 Ruggedness in Class-AB operations
The BLF6G15L-40RN and the BLF6G15LS-40RN are capable of withstanding a load
mismatch corresponding to VSWR 10 : 1 through all phases under following conditions:
V
DS
= 28 V; I
Dq
= 375 mA; P
L
= 40 W; f = 1476 MHz (CW).
8. Test information
8.1 Impedance information
Table 8.
Typical impedance
Measured load-pull data. Typical values per section. I
Dq
= 330 mA; main transistor V
DS
= 28 V
Z
S
and Z
L
defined in
Figure 1.
f
(MHz)
1450
1480
1510
BLF6G15L-40RN_6G15LS-40RN
Z
S
()
4.4
j5.9
4.4
j4.1
6.4
j4.7
All information provided in this document is subject to legal disclaimers.
Z
L
()
5.5
j4.6
5.0
j5.0
5.0
j5.0
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 14 May 2012
3 of 12
NXP Semiconductors
BLF6G15L(S)-40RN
Power LDMOS transistor
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
8.2 One-tone graphs
DDD
*
S
'
3
/
V
DS
= 28 V; I
Dq
= 375 mA.
(1) G
p
at f = 1475 MHz
(2) G
p
at f = 1493 MHz
(3) G
p
at f = 1511 MHz
(4)
D
at f = 1475 MHz
(5)
D
at f = 1493 MHz
(6)
D
at f = 1511 MHz
Fig 2.
Power gain and drain efficiency as function of load power; typical values
BLF6G15L-40RN_6G15LS-40RN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 14 May 2012
4 of 12
NXP Semiconductors
BLF6G15L(S)-40RN
Power LDMOS transistor
8.3 2-Carrier W-CDMA graphs
3GPP, test model 1; 64 DPCH, PAR = 8.4 dB at 0.01 % probability, 5 MHz carrier spacing.
DDD
DDD
*
S
'
$&35
0
$&35
0
3
/
3
/
T
amb
= 25
C.
(1) G
p
at f = 1475 MHz
(2) G
p
at f = 1493 MHz
(3) G
p
at f = 1511 MHz
(4)
D
at f = 1475 MHz
(5)
D
at f = 1493 MHz
(6)
D
at f = 1511 MHz
T
amb
= 25
C.
(1) ACPR
5M
at f = 1475 MHz
(2) ACPR
5M
at f = 1493 MHz
(3) ACPR
5M
at f = 1511 MHz
(4) ACPR
10M
at f = 1475 MHz
(5) ACPR
10M
at f = 1493 MHz
(6) ACPR
10M
at f = 1511 MHz
Fig 3.
Power gain and drain efficiency as function of
load power; typical values
Fig 4.
Adjacent channel power ratio (5 MHz and
10 MHz) as a function of load power; typical
values
BLF6G15L-40RN_6G15LS-40RN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 14 May 2012
5 of 12
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