BF992
Silicon N-channel dual gate MOS-FET
Rev. 04 — 21 November 2007
Product data sheet
IMPORTANT NOTICE
Dear customer,
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NXP Semiconductors
NXP
Semiconductors
Product specification
Silicon N-channel dual gate MOS-FET
APPLICATIONS
•
VHF applications such as VHF television tuners and FM
tuners with 12 V supply voltage. The device is also
suitable for use in professional communications
equipment.
DESCRIPTION
Depletion type field-effect transistor in a plastic
micro-miniature SOT143B package with source and
substrate interconnected.
The transistor is protected against excessive input voltage
surges by integrated back-to-back diodes between gates
and source.
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
1
Top view
Marking code:
%MB.
BF992
PINNING
PIN
1
2
3
4
SYMBOL
s, b
d
g
2
g
1
source
drain
gate 2
gate 1
DESCRIPTION
handbook, halfpage
4
3
g2
g
1
d
2
s,b
MAM039
Fig.1
Simplified outline (SOT143B) and symbol.
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
Y
fs
C
ig1-s
C
rs
F
T
j
PARAMETER
drain-source voltage (DC)
drain current (DC)
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
operating junction temperature
T
amb
= 60
°C
f = 1 kHz; I
D
= 15 mA; V
DS
= 10 V;
V
G2-S
= 4 V
f = 1 MHz; I
D
= 15 mA; V
DS
= 10 V;
V
G2-S
= 4 V
f = 1 MHz; I
D
= 15 mA; V
DS
= 10 V;
V
G2-S
= 4 V
G
S
= 2 mS; I
D
= 15 mA; V
DS
= 10 V;
V
G2-S
= 4 V; f = 200 MHz
CONDITIONS
−
−
−
25
4
30
1.2
−
TYP.
MAX.
20
40
200
−
−
−
−
150
V
mA
mW
mS
pF
fF
dB
°C
UNIT
Rev. 04 - 21 November 2007
2 of 9
NXP
Semiconductors
Product specification
Silicon N-channel dual gate MOS-FET
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
DS
I
D
I
G1
I
G2
P
tot
T
stg
T
j
Note
1. Device mounted on a ceramic substrate, 8 mm
×
10 mm
×
0.7 mm.
PARAMETER
drain-source voltage
drain current
gate 1 current
gate 2 current
total power dissipation
storage temperature
operating junction temperature
T
amb
≤
60
°C;
see Fig.2; note 1
CONDITIONS
−
−
−
−
−
−65
−
MIN.
MAX.
20
40
±10
±10
200
+150
150
BF992
UNIT
V
mA
mA
mA
mW
°C
°C
MBL033
handbook, halfpage
200
Ptot max
(mW)
100
0
0
100
Tamb (
o
C)
200
Fig.2 Power derating curves.
Rev. 04 - 21 November 2007
3 of 9
NXP
Semiconductors
Product specification
Silicon N-channel dual gate MOS-FET
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Device mounted on a ceramic substrate, 8 mm
×
10 mm
×
0.7 mm.
STATIC CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V
G2-S
= V
DS
= 0; I
G1-SS
=
±10
mA
V
G1-S
= V
DS
= 0; I
G2-SS
=
±10
mA
V
G2-S
= 4 V; V
DS
= 10 V; I
D
= 20
µA
V
G1-S
= 0; V
DS
= 10 V; I
D
= 20
µA
V
G2-S
= V
DS
= 0; V
G1-S
=
±7
V
V
G1-S
= V
DS
= 0; V
G2-S
=
±7
V
8
8
0.2
0.2
−
−
MIN.
PARAMETER
thermal resistance from junction to ambient in free air
CONDITIONS
note 1
VALUE
460
BF992
UNIT
K/W
MAX.
20
20
1.3
1.1
25
25
UNIT
V
V
V
V
nA
nA
±V
(BR)G1-SS
gate 1-source breakdown voltage
±V
(BR)G2-SS
gate 2-source breakdown voltage
−V
(P)G1-S
−V
(P)G2-S
±I
G1-SS
±I
G2-SS
gate 1-source cut-off voltage
gate 2-source cut-off voltage
gate 1 cut-off current
gate 2 cut-off current
DYNAMIC CHARACTERISTICS
Common source; T
amb
= 25
°C;
V
DS
= 10 V; V
G2-S
= 4 V; I
D
= 15 mA; unless otherwise specified.
SYMBOL
y
fs
C
ig1-s
C
ig2-s
C
os
C
rs
F
PARAMETER
forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
output capacitance
reverse transfer capacitance
noise figure
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 200 MHz; G
S
= 2 mS
CONDITIONS
−
−
−
−
−
MIN.
20
4
1.7
2
30
1.2
TYP.
25
MAX.
−
−
−
−
40
−
UNIT
mS
pF
pF
pF
fF
dB
Rev. 04 - 21 November 2007
4 of 9
NXP
Semiconductors
Product specification
Silicon N-channel dual gate MOS-FET
BF992
handbook, halfpage
I
24
MGE797
D
(mA)
handbook, halfpage
30
MGE799
4V3V
VG2-S = 5 V
2V
20
VG1-S = 0.2 V
0.1 V
0V
ID
(mA)
20
16
12
1V
−0.1
V
−0.2
V
−0.3
V
10
0V
8
4
−0.4
V
−0.5
V
−0.6
V
0
−1
0
0
2
4
6
8
10
VDS (V)
12
0
VG1-S (V)
1
V
G2-S
= 4 V; T
j
= 25
°C.
V
DS
= 10 V; T
j
= 25
°C.
Fig.3 Output characteristics; typical values.
Fig.4 Transfer characteristics; typical values.
handbook, halfpage
30
MGE798
handbook, halfpage
30
MGE800
|yfs|
(mS)
20
5V
4V
3V
2V
Yfs
(mS)
20
VG2-S =
5V
4V
3V
10
1V
VG2-S = 0 V
0
0
10
ID (mA)
20
10
2V
1V
0
−1
0V
0
VG1-S (V)
1
V
DS
= 10 V; T
j
= 25
°C.
V
DS
= 10 V; T
j
= 25
°C.
Fig.5
Forward transfer admittance as a function
of drain current; typical values.
Fig.6
Forward transfer admittance as a function
of gate 1-source voltage; typical values.
Rev. 04 - 21 November 2007
5 of 9
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