DISCRETE SEMICONDUCTORS
DATA SHEET
BTA216 series B
Three quadrant triacs
high commutation
Product
specification
October 1997
1;3
Semiconductors
Product specification
Three quadrant triacs
high commutation
GENERAL DESCRIPTION
Glass passivated high commutation
triacs in a plastic envelope intended
for use in circuits where high static and
dynamic dV/dt and high dI/dt can
occur. These devices will commutate
the full rated rms current at the
maximum rated junction temperature,
without the aid of a snubber.
BTA216 series B
QUICK REFERENCE DATA
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
BTA216-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX. MAX. MAX. UNIT
500B
500
16
140
600B
600
16
140
800B
800
16
140
V
A
A
PINNING - TO220AB
PIN
1
2
3
tab
DESCRIPTION
main terminal 1
PIN CONFIGURATION
tab
SYMBOL
T2
main terminal 2
gate
main terminal 2
1 23
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
full sine wave;
T
mb
≤
99 ˚C
full sine wave;
T
j
= 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 20 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/μs
CONDITIONS
MIN.
-
-
-500
500
1
MAX.
-600
600
1
16
-800
800
UNIT
V
A
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
-
-
140
150
98
100
2
5
5
0.5
150
125
A
A
A
2
s
A/μs
A
V
W
W
˚C
˚C
over any 20 ms
period
-
-
-
-
-40
-
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/μs.
October 1997
1
Rev 1.200
1;3
Semiconductors
Product specification
Three quadrant triacs
high commutation
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
CONDITIONS
MIN.
-
-
-
BTA216 series B
TYP.
-
-
60
MAX.
1.2
1.7
-
UNIT
K/W
K/W
K/W
Thermal resistance
full cycle
junction to mounting base half cycle
Thermal resistance
in free air
junction to ambient
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
I
GT
PARAMETER
Gate trigger current
2
CONDITIONS
V
D
= 12 V; I
T
= 0.1 A
T2+ G+
T2+ G-
T2- G-
T2+ G+
T2+ G-
T2- G-
MIN.
2
2
2
-
-
-
-
-
-
0.25
-
TYP.
18
21
34
31
34
30
31
1.2
0.7
0.4
0.1
MAX.
50
50
50
60
90
60
60
1.5
1.5
-
0.5
UNIT
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
I
L
Latching current
V
D
= 12 V; I
GT
= 0.1 A
I
H
V
T
V
GT
I
D
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
V
D
= 12 V; I
GT
= 0.1 A
I
T
= 20 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 ˚C
V
D
= V
DRM(max)
; T
j
= 125 ˚C
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
dV
D
/dt
dI
com
/dt
t
gt
PARAMETER
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating current
Gate controlled turn-on
time
CONDITIONS
V
DM
= 67% V
DRM(max)
; T
j
= 125 ˚C;
exponential waveform; gate open circuit
V
DM
= 400 V; T
j
= 125 ˚C; I
T(RMS)
= 16 A;
without snubber; gate open circuit
I
TM
= 20 A; V
D
= V
DRM(max)
; I
G
= 0.1 A;
dI
G
/dt = 5 A/μs
MIN.
1000
-
-
TYP.
4000
28
2
MAX.
-
-
-
UNIT
V/μs
A/ms
μs
2
Device does not trigger in the T2-, G+ quadrant.
October 1997
2
Rev 1.200
1;3
Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA216 series B
25
Ptot / W
BT139
Tmb(max) / C
= 180
95
20
IT(RMS) / A
BT139
20
1
120
90
101
99 C
15
15
60
30
107
10
113
10
5
5
119
0
0
5
10
IT(RMS) / A
15
125
20
0
-50
0
50
Tmb / C
100
150
Fig.1. Maximum on-state dissipation, P
tot
, versus rms
on-state current, I
T(RMS)
, where
α
= conduction angle.
ITSM / A
BTA216
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
.
BT139
1000
50
IT(RMS) / A
40
dI
T
/dt limit
100
30
20
IT
T
10
10us
I TSM
time
10
Tj initial = 25 C max
100us
1ms
T/s
10ms
100ms
0
0.01
0.1
1
surge duration / s
10
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
20ms.
ITSM / A
BT139
IT
T
100
ITSM
time
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb
≤
99˚C.
VGT(Tj)
VGT(25 C)
150
1.6
1.4
1.2
1
BT136
Tj initial = 25 C max
50
0.8
0.6
0
1
10
100
Number of cycles at 50Hz
1000
0.4
-50
0
50
Tj / C
100
150
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
October 1997
3
Rev 1.200
1;3
Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA216 series B
3
2.5
2
1.5
IGT(Tj)
IGT(25 C)
BTA216
T2+ G+
T2+ G-
T2- G-
50
IT / A
Tj = 125 C
Tj = 25 C
BT139
40
typ
Vo = 1.195 V
Rs = 0.018 Ohms
max
30
20
1
10
0.5
0
-50
0
0
0.5
1
1.5
VT / V
2
2.5
3
0
50
Tj / C
100
150
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25˚C), versus junction temperature T
j
.
IL(Tj)
IL(25 C)
Fig.10. Typical and maximum on-state characteristic.
3
2.5
2
1.5
1
TRIAC
10
Zth j-mb (K/W)
BT139
1
unidirectional
bidirectional
0.1
P
D
t
p
0.01
0.5
0
-50
0.001
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
t
0
50
Tj / C
100
150
10s
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25˚C),
versus junction temperature T
j
.
IH(Tj)
IH(25C)
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
3
2.5
2
1.5
1
0.5
TRIAC
1000
dIcom/dt (A/ms)
BTA216
100
10
0
-50
0
50
Tj / C
100
150
1
20
40
60
80
Tj / C
100
120
140
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25˚C),
versus junction temperature T
j
.
Fig.12. Typical, critical rate of change of commutating
current dI
com
/dt versus junction temperature.
October 1997
4
Rev 1.200
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