BTA312X-600B
5 October 2012
3Q Hi-Com Triac
Product data sheet
1. Product profile
1.1 General description
Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full
pack" plastic package intended for use in circuits where high static and dynamic dV/dt
and high dI/dt can occur. This "series B" triac will commutate the full rated RMS current at
the maximum rated junction temperature without the aid of a snubber.
1.2 Features and benefits
•
3Q technology for improved noise immunity
•
High commutation capability with maximum false trigger immunity
•
High voltage capability
•
Isolated mounting base package
•
Less sensitive gate for highest noise immunity
•
Planar passivated for voltage ruggedness and reliability
•
Triggering in three quadrants only
•
Very high immunity to false turn-on by dV/dt
1.3 Applications
•
Electronic thermostats (heating and cooling)
•
High power motor controls e.g. washing machines and vacuum cleaners
•
Rectifier-fed DC inductive loads e.g. DC motors and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
RMS on-state current
full sine wave; T
h
≤ 59 °C;
Fig. 1; Fig. 2;
Fig. 3
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
2
-
50
mA
Conditions
Min
-
-
-
Typ
-
-
-
Max
600
100
12
Unit
V
A
A
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NXP Semiconductors
BTA312X-600B
3Q Hi-Com Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
Min
2
2
Typ
-
-
Max
50
50
Unit
mA
mA
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
T2
G
n.c.
main terminal 1
main terminal 2
gate
mounting base; isolated
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 2 3
TO-220F (SOT186A)
3. Ordering information
Table 3.
Ordering information
Package
Name
BTA312X-600B
BTA312X-600B/L01
TO-220F
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
Version
SOT186A
SOT186A
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
h
≤ 59 °C;
Fig. 1; Fig. 2;
Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
© NXP B.V. 2012. All rights reserved
Conditions
Min
-
-
-
Max
600
12
100
Unit
V
A
A
BTA312X-600B
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Product data sheet
5 October 2012
2 / 12
NXP Semiconductors
BTA312X-600B
3Q Hi-Com Triac
Symbol
Parameter
Conditions
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
Min
-
-
-
-
-
Max
110
50
100
2
5
0.5
150
125
003a a b681
Unit
A
2
I t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
15
2
I t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
2
t
p
= 10 ms; SIN
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs
A s
A/µs
A
W
W
°C
°C
over any 20 ms period
-
-40
-
003a a b679
100
I
T(RMS )
(A)
80
I
T(RMS )
(A)
10
60
40
5
20
0
-50
0
50
100
T
h
(°C)
150
0
10
-2
10
-1
1
10
s urge duration (s )
Fig. 1.
RMS on-state current as a function of heatsink
temperature; maximum values
f = 50 Hz; T
h
= 59 °C
Fig. 2.
RMS on-state current as a function of surge
duration; maximum values
BTA312X-600B
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© NXP B.V. 2012. All rights reserved
Product data sheet
5 October 2012
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NXP Semiconductors
BTA312X-600B
3Q Hi-Com Triac
16
P
tot
(W)
12
003aab690
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α
α = 180°
120°
90°
60°
30°
8
4
0
0
3
6
9
I
T(RMS)
(A)
12
α = conduction angle
Fig. 3.
Total power dissipation as a function of RMS on-state current; maximum values
10
3
I
TSM
(A)
(1)
003aab806
10
2
I
T
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤ 20 ms
(1) dI
T
/dt limit
Fig. 4.
Non-repetitive peak on-state current as a function of pulse duration; maximum values
BTA312X-600B
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© NXP B.V. 2012. All rights reserved
Product data sheet
5 October 2012
4 / 12
NXP Semiconductors
BTA312X-600B
3Q Hi-Com Triac
I
TSM
(A)
100
80
60
40
20
0
120
003aab809
I
T
I
TSM
t
1/f
T
j(init)
= 25 °C max
1
10
10
2
number of cycles (n)
10
3
f = 50 Hz
Fig. 5.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
5. Thermal characteristics
Table 5.
Symbol
R
th(j-h)
Thermal characteristics
Parameter
thermal resistance
from junction to
heatsink
thermal resistance
from junction to
ambient
Conditions
full cycle or half cycle; with heatsink
compound;
Fig. 6
full cycle or half cycle; without heatsink
compound;
Fig. 6
in free air
Min
-
-
-
Typ
-
-
55
Max
4
5.5
-
Unit
K/W
K/W
K/W
R
th(j-a)
BTA312X-600B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
5 October 2012
5 / 12
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