DISCRETE SEMICONDUCTORS
DATA SHEET
BTA216B series D, E and F
Three quadrant triacs
guaranteed commutation
Product
specification
April 2002
NXP
Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
GENERAL DESCRIPTION
Passivated guaranteed commutation triacs in
a plastic envelope suitable for surface
mounting, intended for use in motor control
circuits or with other highly inductive loads.
These devices balance the requirements of
commutation performance
and gate
sensitivity. The "sensitive gate" E series and
"logic level" D series are intended for
interfacing with low power drivers, including
micro controllers.
BTA216B series D, E and F
QUICK REFERENCE DATA
SYMBOL
PARAMETER
BTA216B-
BTA216B-
BTA216B-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX.
600D
600E
600F
600
16
140
UNIT
V
DRM
I
T(RMS)
I
TSM
V
A
A
PINNING - SOT404
PIN
1
2
3
mb
DESCRIPTION
main terminal 1
main terminal 2
gate
main terminal 2
PIN CONFIGURATION
mb
SYMBOL
T2
2
1
3
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
full sine wave;
T
mb
≤
99 ˚C
full sine wave;
T
j
= 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 20 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
CONDITIONS
MIN.
-
-
MAX.
600
1
16
UNIT
V
A
-
-
-
I
2
t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
140
150
98
100
2
5
0.5
150
125
A
A
A
2
s
A/µs
A
W
W
˚C
˚C
over any 20 ms
period
-
-
-
-40
-
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
April 2002
1
Rev 2.000
NXP
Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
CONDITIONS
BTA216B series D, E and F
MIN.
-
-
-
TYP.
-
-
55
MAX.
1.2
1.7
-
UNIT
K/W
K/W
K/W
Thermal resistance
full cycle
junction to mounting base half cycle
Thermal resistance
minimum footprint, FR4 board
junction to ambient
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
I
GT
PARAMETER
Gate trigger current
2
CONDITIONS
BTA216B-
V
D
= 12 V; I
T
= 0.1 A
T2+ G+
T2+ G-
T2- G-
V
D
= 12 V; I
GT
= 0.1 A
T2+ G+
T2+ G-
T2- G-
V
D
= 12 V; I
GT
= 0.1 A
I
T
= 20 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A;
T
j
= 125 ˚C
V
D
= V
DRM(max)
; T
j
= 125 ˚C
-
-
-
-
-
-
-
-
-
0.25
-
MIN.
...D
5
5
5
15
25
25
15
MAX.
...E
10
10
10
25
30
30
25
...D, E, F
V
T
V
GT
I
D
On-state voltage
Gate trigger voltage
Off-state leakage current
1.5
1.5
-
0.5
V
V
V
mA
...F
25
25
25
30
40
40
30
mA
mA
mA
mA
mA
mA
mA
UNIT
I
L
Latching current
I
H
Holding current
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
dV
D
/dt
dI
com
/dt
PARAMETER
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating current
Critical rate of change of
commutating current
CONDITIONS
BTA216B-
V
DM
= 67% V
DRM(max)
;
T
j
= 110 ˚C; exponential
waveform; gate open circuit
V
DM
= 400 V; T
j
= 125 ˚C;
I
T(RMS)
= 16 A;
dV
com
/dt = 10V/µs; gate
open circuit
V
DM
= 400 V; T
j
= 125 ˚C;
I
T(RMS)
= 16 A;
dV
com
/dt = 0.1V/µs; gate
open circuit
...D
30
2.5
MIN.
...E
60
6.2
...F
70
18
-
-
V/µs
A/ms
MAX.
UNIT
dI
com
/dt
12
20
50
-
A/ms
2
Device does not trigger in the T2-, G+ quadrant.
April 2002
2
Rev 2.000
NXP
Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA216B series D, E and F
25
Ptot / W
Tmb(max) / C
= 180
95
20
IT(RMS) / A
BT139
20
1
120
90
101
99 C
15
15
60
30
107
10
113
10
5
119
5
0
0
5
10
IT(RMS) / A
15
125
20
0
-50
0
50
Tmb / C
100
150
Fig.1. Maximum on-state dissipation, P
tot
, versus rms
on-state current, I
T(RMS)
, where
α
= conduction angle.
ITSM / A
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
.
IT(RMS) / A
1000
50
40
dI
T
/dt limit
100
30
20
IT
T
10
10us
I TSM
time
10
Tj initial = 25 C max
100us
1ms
T/s
10ms
100ms
0
0.01
0.1
1
surge duration / s
10
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
20ms.
ITSM / A
IT
T
100
ITSM
time
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb
≤
99˚C.
VGT(Tj)
VGT(25 C)
150
1.6
1.4
1.2
1
Tj initial = 25 C max
50
0.8
0.6
0
1
10
100
Number of cycles at 50Hz
1000
0.4
-50
0
50
Tj / C
100
150
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
April 2002
3
Rev 2.000
NXP
Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA216B series D, E and F
IGT(Tj)
IGT(25°
C)
3
T2+ G+
T2+ G-
T2- G-
50
IT / A
Tj = 125 C
Tj = 25 C
BT139
2.5
40
typ
Vo = 1.195 V
Rs = 0.018 Ohms
max
2
30
1.5
20
1
0.5
10
0
-50
0
Tj/°
C
50
100
150
0
0
0.5
1
1.5
VT / V
2
2.5
3
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25˚C), versus junction temperature T
j
.
IL(Tj)
IL(25 C)
Fig.10. Typical and maximum on-state characteristic.
10
Zth j-mb (K/W)
3
2.5
2
1.5
1
0.5
1
unidirectional
bidirectional
0.1
P
D
t
p
0.01
t
0
-50
0
50
Tj / C
100
150
0.001
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
10s
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25˚C),
versus junction temperature T
j
.
IH(Tj)
IH(25C)
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
dIcom/dt (A/ms)
100
F TYPE
E TYPE
D TYPE
3
2.5
2
10
1.5
1
0.5
0
-50
1
0
50
Tj / C
100
150
20
40
60
80
Tj/˚C
100
120
140
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25˚C),
versus junction temperature T
j
.
Fig.12. Mimimum, critical rate of change of
commutating current dI
com
/dt versus junction
temperature, dV
com
/dt = 10V/µs.
April 2002
4
Rev 2.000
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