BTA316X series B, C and E
16 A Three-quadrant triacs high commutation
Rev. 01 — 11 April 2007
Product data sheet
1. Product profile
1.1 General description
Passivated, new generation, high commutation triacs in a SOT186A isolated full pack
plastic package
1.2 Features
I
Very high commutation performance
maximized at each gate sensitivity
I
High isolation voltage
I
High immunity to dV/dt
I
Wide range of gate sensitivities
1.3 Applications
I
High power motor control - e.g. washing
I
Refrigeration and air conditioning
machines and vacuum cleaners
compressors
I
Non-linear rectifier-fed motor loads
I
Electronic thermostats
1.4 Quick reference data
I
I
I
I
V
DRM
≤
600 V (BTA316X-600B/C/E)
V
DRM
≤
800 V (BTA316X-800B/C/E)
I
TSM
≤
140 A (t = 20 ms)
I
T(RMS)
≤
16 A
I
I
GT
≤
50 mA (BTA316X series B)
I
I
GT
≤
35 mA (BTA316X series C)
I
I
GT
≤
10 mA (BTA316X series E)
2. Pinning information
Table 1.
Pin
1
2
3
mb
Pinning
Description
main terminal 1 (T1)
main terminal 2 (T2)
gate (G)
mounting base; isolated
mb
T2
sym051
Simplified outline
Symbol
T1
G
1 2 3
SOT186A (TO-220F)
NXP Semiconductors
BTA316X series B, C and E
16 A Three-quadrant triacs high commutation
3. Ordering information
Table 2.
Ordering information
Package
Name
BTA316X-600B
BTA316X-600C
BTA316X-600E
BTA316X-800B
BTA316X-800C
BTA316X-800E
TO-220F
Description
Version
plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOT186A
3-lead TO-220 ‘full pack’
Type number
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
Parameter
repetitive peak off-state voltage
Conditions
BTA316X-600B; BTA316X-600C;
BTA316X-600E
BTA316X-800B; BTA316X-800C;
BTA316X-800E
I
T(RMS)
I
TSM
RMS on-state current
non-repetitive peak on-state current
full sine wave; T
h
≤
45
°C;
see
Figure 4
and
5
full sine wave; T
j
= 25
°C
prior to
surge; see
Figure 2
and
3
t = 20 ms
t = 16.7 ms
I
2
t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
[1]
[1]
Min
-
-
-
Max
600
800
16
Unit
V
V
A
-
-
-
-
-
-
140
150
98
100
2
5
0.5
+150
125
A
A
A
2
s
A/µs
A
W
W
°C
°C
I
2
t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
t = 10 ms
I
TM
= 20 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
over any 20 ms period
-
−40
-
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 15 A/µs.
BTA316X_SER_B_C_E_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 11 April 2007
2 of 13
NXP Semiconductors
BTA316X series B, C and E
16 A Three-quadrant triacs high commutation
20
P
tot
(W)
15
003aab689
conduction
angle,
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α
= 180°
120°
α
90°
60°
30°
10
5
0
0
2
4
6
8
10
12
14
I
T(RMS)
(A)
16
α
= conduction angle
Fig 1. Total power dissipation as a function of RMS on-state current; maximum values
003aab668
160
I
TSM
(A)
120
80
I
T
I
TSM
t
1/f
T
j(init)
= 25
°C
max
40
0
1
10
10
2
number of cycles (n)
10
3
f = 50 Hz
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA316X_SER_B_C_E_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 11 April 2007
3 of 13
NXP Semiconductors
BTA316X series B, C and E
16 A Three-quadrant triacs high commutation
10
3
I
TSM
(A)
003aab671
(1)
10
2
I
T
I
TSM
t
t
p
T
j(init)
= 25
°C
max
10
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤
20 ms
(1) dI
T
/dt limit
Fig 3. Non-repetitive peak on-state current as a function of pulse duration; maximum values
003aab669
003aab667
120
I
T(RMS)
(A)
100
20
I
T(RMS)
(A)
16
80
12
60
8
40
4
20
0
10
-2
10
-1
1
10
surge duration (s)
0
-50
0
50
100 T
h
(°C) 150
f = 50 Hz;
T
h
= 45
°C
Fig 4. RMS on-state current as a function of surge
duration; maximum values
Fig 5. RMS on-state current as a function of heatsink
temperature; maximum values
BTA316X_SER_B_C_E_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 11 April 2007
4 of 13
NXP Semiconductors
BTA316X series B, C and E
16 A Three-quadrant triacs high commutation
5. Thermal characteristics
Table 4.
Symbol
R
th(j-h)
Thermal characteristics
Parameter
Conditions
Min
-
Typ
-
Max
5.5
Unit
K/W
thermal resistance from junction to full or half cycle without
heatsink
heatsink compound; see
Figure 6
full or half cycle with
heatsink compound; see
Figure 6
R
th(j-a)
thermal resistance from junction to in free air
ambient
-
-
4.0
K/W
-
55
-
K/W
10
Z
th(j-h)
(K/W)
1
(3)
(4)
003aab672
(1)
(2)
10
−1
P
10
−2
t
t
p
10
−3
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
10
(1) Unidirectional (half cycle) without heatsink compound
(2) Unidirectional (half cycle) with heatsink compound
(3) Bidirectional (full cycle) without heatsink compound
(4) Bidirectional (full cycle) with heatsink compound
Fig 6. Transient thermal impedance from junction to heatsink as a function of pulse duration
6. Isolation characteristics
Table 5.
Isolation limiting values and characteristics
T
h
= 25
°
C unless otherwise specified.
Symbol
V
isol(RMS)
Parameter
Conditions
Min
-
Typ
-
Max
2500
Unit
V
RMS isolation voltage from all three terminals to
external heatsink; f = 50 Hz to
60 Hz; sinusoidal waveform;
RH
≤
65 %; clean and dust free
isolation capacitance
from pin 2 to external heatsink;
f = 1 MHz
C
isol
-
10
-
pF
BTA316X_SER_B_C_E_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 11 April 2007
5 of 13
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