This product complies with the RoHS Directive (EU 2002/95/EC).
Power Transistors
2SD1261, 2SD1261A
Silicon NPN triple diffusion planar type darlington
Unit: mm
For power amplification
Complementary to 2SB0938, 2SB0938A
10.0
±0.3
1.5
±0.1
8.5
±0.2
6.0
±0.2
3.4
±0.3
1.0
±0.1
M
Di ain
sc te
on na
tin nc
ue e/
d
■
Features
1.5
+0
–0.4
•
High forward current transfer ratio h
FE
•
High-speed switching
•
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
■
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Symbol
V
CBO
V
CEO
Collector-base voltage
(Emitter open)
2SD1261
2SD1261A
Collector-emitter voltage 2SD1261
(Base open)
2SD1261A
Emitter-base voltage (Collector open)
Collector current
V
EBO
I
C
I
CP
P
C
T
j
Peak collector current
Collector power dissipation
T
a
=
25°C
Junction temperature
Storage temperature
T
stg
M
Pl
e
Publication date: April 2003
pl d in
as
an c
e
ed lud
pl
vi
an m m es
si
tf
ed ain ai fo
ol
lo dis dis ten nte llow
ht w c
tp in o co an nan in
:// g nt n ce c g
pa U in tin t e fo
na RL ue ue ype typ ur
so a d t d
e Pr
od
ni bo yp typ
c. u e e
uc
ne t l
d
tl
at
ife
t/s e
cy
c/ st
en in
cl
e
fo
st
rm
ag
at
e.
io
n.
4.4
±0.5
Rating
60
Unit
V
(6.5)
80
60
V
1: Base
2: Collector
3: Emitter
N-G1 Package
80
5
4
8
Note) Self-supported type package is also prepared
V
A
A
Internal Connection
C
B
40
W
1.3
150
°C
E
−55
to
+150
°C
ai
nt
en
an
ce
/D
is
co
nt
in
ue
(7.6)
(1.5)
1
2
0.8
±0.1
R = 0.5
R = 0.5
2.54
±0.3
1.0
±0.1
1.4
±0.1
0.4
±0.1
5.08
±0.5
(8.5)
(6.0)
1.3
3
2.0
±0.5
4.4
±0.5
0 to 0.4
14.4
±0.5
3.0
+0.4
–0.2
SJD00177BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1261, 2SD1261A
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Collector-emitter voltage
(Base open)
Base-emitter voltage
Collector-base cutoff current
(Emitter open)
Collector-emitter cutoff
current (Base open)
2SD1261
2SD1261A
2SD1261
2SD1261A
I
EBO
h
FE1
h
FE2 *
Collector-emitter saturation voltage
V
CE(sat)
f
T
t
on
t
stg
t
f
I
CEO
2SD1261
2SD1261A
V
BE
I
CBO
V
CE
=
3
V, I
C
=
3
A
V
CB
=
60
V, I
E
= 0
V
CB
=
80
V, I
E
= 0
V
CE
=
30
V, I
B
= 0
V
CE
=
40
V, I
B
= 0
V
EB
= 5 V, I
C
= 0
V
CE
= 3
V, I
C
= 0.5
A
V
CE
= 3
V, I
C
= 3
A
I
C
= 3
A, I
B
= 12
mA
I
C
= 5
A, I
B
= 20
mA
Transition frequency
Turn-on time
Strage time
Fall time
V
CE
=
10 V, I
C
= 0.5
A, f
=
1 MHz
I
C
= 3
A
I
B1
= 12
mA, I
B2
= −12
mA
V
CC
=
50 V
20
0.5
4.0
1.0
1 000
1 000
10 000
2.0
4.0
V
V
MHz
µs
µs
µs
Symbol
V
CEO
Conditions
I
C
=
30 mA, I
B
=
0
Min
60
80
2.5
200
200
500
500
2
mA
µA
V
µA
Typ
Max
Unit
V
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE2
R
1 000 to 2500
Q
P
2 000 to 5 000 4 000 to 10 000
2
SJD00177BED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1261, 2SD1261A
P
C
T
a
50
10
(1)T
C
=Ta
(2)With a 50×50×2mm
Al heat sink
(3)Without heat sink
(P
C
=1.3W)
T
C
=25˚C
I
B
=4.0mA
3.5mA
3.0mA
2.5mA
2.0mA
1.5mA
1.0mA
0.5mA
I
C
V
CE
10
I
C
V
BE
V
CE
=3V
Collector power dissipation P
C
(W)
40
(1)
8
8
Collector current I
C
(A)
Collector current I
C
(A)
25˚C
30
6
6
T
C
=100˚C
–25˚C
20
4
4
10
(2)
(3)
2
2
0
0
40
80
120
160
0
0
2
4
6
8
10
0
0
0.8
1.6
2.4
3.2
Ambient temperature T
a
(
°C
)
Collector-emitter voltage V
CE
(V)
Base-emitter voltage V
BE
(V)
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
100
I
C
/I
B
=250
h
FE
I
C
V
CE
=3V
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
10
4
I
E
=0
f=1MHz
T
C
=25˚C
10
5
Forward current transfer ratio h
FE
10
25˚C
10
4
T
C
=100˚C
10
3
1
T
C
=100˚C
–25˚C
10
3
25˚C
–25˚C
10
2
0.1
10
2
10
0.01
0.01
0.1
1
10
10
0.01
0.1
1
10
1
0.1
1
10
100
Collector current I
C
(A)
Collector current I
C
(A)
Collector-base voltage V
CB
(V)
Safe operation area
100
Non repetitive pulse
T
C
=25˚C
R
th
t
10
3
(1)Without heat sink
(2)With a 50×50×2mm Al heat sink
(1)
(2)
Thermal resistance R
th
(°C/W)
10
2
Collector current I
C
(A)
10
I
CP
I
C
t=10ms
t=1ms
10
1
t=300ms
1
0.1
2SD1261A
2SD1261
10
−1
0.01
1
10
100
1000
10
−2
10
−4
10
−3
10
−2
10
−1
1
10
10
2
10
3
10
4
Collector-emitter voltage V
CE
(V)
Time t (s)
SJD00177BED
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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