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2SC5276-4

Description
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN, CP4, 4 PIN
CategoryDiscrete semiconductor    The transistor   
File Size82KB,5 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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2SC5276-4 Overview

RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN, CP4, 4 PIN

2SC5276-4 Parametric

Parameter NameAttribute value
Objectid1546486306
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
YTEOL0
Other featuresLOW NOISE
Shell connectionCOLLECTOR
Maximum collector current (IC)0.03 A
Collector-based maximum capacity0.7 pF
Collector-emitter maximum voltage10 V
ConfigurationSINGLE
Minimum DC current gain (hFE)90
highest frequency bandS BAND
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)11000 MHz
Ordering number:ENN5186
NPN Epitaxial Planar Silicon Transistor
2SC5276
UHF to S Band Low-Noise Amplifier,
OSC Applications
Features
· Low noise : NF=0.9dB typ (f=1GHz).
: NF=1.4dB typ (f=1.5GHz).
· High gain :
⏐S21e⏐
2
=11dB typ (f=1.5GHz).
· High cutoff frequency : f
T
=11GHz typ.
· Low-voltage, low-current operation
(V
CE
=1V, I
C
=1mA)
: f
T
=7GHz type.
:
⏐S21e⏐
2
=6dB typ (f=1.5GHz).
Package Dimensions
unit:mm
2110A
1.9
0.95 0.95
0.4
4
3
0 to 0.1
[2SC5276]
0.5
0.16
1
2
0.6
0.95 0.85
2.9
0.5
1.5
2.5
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
1 : Emitter
2 : Collector
3 : Emitter
4 : Base
SANYO : CP4
0.8
1.1
Ratings
20
10
1.5
30
200
150
–55 to +150
Unit
V
V
V
mA
mW
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Symbol
ICBO
IEBO
hFE
fT1
fT2
Cob
Cre
VCB=10V, IE=0
VEB=1V, IC=0
VCE=5V, IC=10mA
VCE=5V, IC=10mA
VCE=1V, IC=1mA
VCB=10V, f=1MHz
VCB=10V, f=1MHz
3
60 to 120
4
90 to 180
5
135 to 270
Conditions
Ratings
min
typ
max
1.0
10
60*
8
11
7
0.45
0.25
0.7
270*
Unit
µA
µA
GHz
GHz
pF
pF
* : The 2SC5276 is classified by 10mA h
FE
as follows :
Marking : MN
Rank
h
FE
rank : 3, 4, 5
hFE
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30105TN (PC)/21599TH (KT)/83095YK (KOTO) TA-0412 No.5186–1/5

2SC5276-4 Related Products

2SC5276-4 2SC5276-5 2SC5276-3
Description RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN, CP4, 4 PIN RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN, CP4, 4 PIN RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN, CP4, 4 PIN
package instruction SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Contacts 4 4 4
Reach Compliance Code unknown unknown unknow
ECCN code EAR99 EAR99 EAR99
Other features LOW NOISE LOW NOISE LOW NOISE
Shell connection COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 0.03 A 0.03 A 0.03 A
Collector-based maximum capacity 0.7 pF 0.7 pF 0.7 pF
Collector-emitter maximum voltage 10 V 10 V 10 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 90 135 60
highest frequency band S BAND S BAND S BAND
JESD-30 code R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
Number of components 1 1 1
Number of terminals 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 0.2 W 0.2 W 0.2 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 11000 MHz 11000 MHz 11000 MHz
Objectid 1546486306 1546486307 -
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