BTA2008-600E
8 November 2012
3Q Hi-Com Triac
Product data sheet
1. Product profile
1.1 General description
Planar passivated high commutation three quadrant triac in a SOT54 (TO-92) plastic
package. This "series E" triac balances the requirements of commutation performance
and gate sensitivity and is intended for interfacing with low power drivers and logic ICs
including microcontrollers.
1.2 Features and benefits
•
3Q technology for improved noise immunity
•
Direct gate triggering from low power drivers and logic ICs
•
High commutation capability with sensitive gate
•
High voltage capability
•
Planar passivated for voltage ruggedness and reliability
•
Sensitive gate for easy logic level triggering
•
Triggering in three quadrants only
1.3 Applications
•
Low power motor controls
•
Small inductive loads e.g. solenoids, door locks, water valves
•
Small loads in large white goods
1.4 Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
RMS on-state current
full sine wave; T
lead
≤ 70 °C;
Fig. 1;
Fig. 2; Fig. 3
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
0.5
-
10
mA
0.5
-
10
mA
Conditions
Min
-
-
-
Typ
-
-
-
Max
600
9
0.8
Unit
V
A
A
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NXP Semiconductors
BTA2008-600E
3Q Hi-Com Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
Min
0.5
Typ
-
Max
10
Unit
mA
2. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
T2
G
T1
main terminal 2
gate
main terminal 1
321
Simplified outline
Graphic symbol
T2
sym051
T1
G
TO-92 (SOT54)
3. Ordering information
Table 3.
Ordering information
Package
Name
BTA2008-600E
TO-92
Description
plastic single-ended leaded (through hole) package; 3 leads
Version
SOT54
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
lead
≤ 70 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
I t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
BTA2008-600E
Conditions
Min
-
-
-
-
-
-
-
-
Max
600
0.8
9
9.9
0.41
100
1
2
0.1
150
Unit
V
A
A
A
2
2
I t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
2
t
p
= 10 ms; SIN
I
T
= 1.5 A; I
G
= 20 mA; dI
G
/dt = 0.2 A/µs
A s
A/µs
A
W
W
°C
2 / 11
over any 20 ms period
-
-40
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
8 November 2012
NXP Semiconductors
BTA2008-600E
3Q Hi-Com Triac
Symbol
T
j
12
Parameter
junction temperature
Conditions
Min
-
Max
125
003aac115
Unit
°C
003aac117
I
T(RMS)
(A)
10
8
1
I
T(RMS)
(A)
0.8
0.6
6
0.4
4
2
0
10
-2
0.2
10
-1
1
10
surge duration (s)
0
-50
0
50
100
150
T
lead
(°C)
f = 50 Hz; T
lead
= 70 °C
Fig. 1.
RMS on-state current as a function of surge
duration; maximum values
1.0
P
tot
(W)
0.8
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α
Fig. 2.
RMS on-state current as a function of lead
temperature; maximum values
003aac118
α = 180°
120°
90°
60°
30°
0.6
0.4
0.2
0.0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
I
T(RMS)
(A)
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3.
Total power dissipation as a function of RMS on-state current; maximum values
BTA2008-600E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
8 November 2012
3 / 11
NXP Semiconductors
BTA2008-600E
3Q Hi-Com Triac
12
I
TSM
(A)
8
003aag393
4
I
T
I
TSM
t
1/f
0
T
j(init)
= 25 °C max
1
10
10
2
number of cycles
10
3
f = 50 Hz
Fig. 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
10
3
003aag394
I
T
I
TSM
(A)
10
2
(1)
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
1
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤ 20 ms; (1) dI
T
/dt limit
Fig. 5.
Non-repetitive peak on-state current as a function of pulse duration; maximum values
5. Thermal characteristics
Table 5.
Symbol
R
th(j-lead)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to lead
thermal resistance
from junction to
ambient
Conditions
full cycle;
Fig. 6
printed circuit board mounted: lead
length = 4 mm
Min
-
-
Typ
-
150
Max
60
-
Unit
K/W
K/W
BTA2008-600E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
8 November 2012
4 / 11
NXP Semiconductors
BTA2008-600E
3Q Hi-Com Triac
10
2
Z
th(j-lead)
(K/W)
10
003aac206
1
P
10
-1
t
p
t
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
10
Fig. 6.
Transient thermal impedance from junction to lead as a function of pulse width
6. Characteristics
Table 6.
Symbol
I
GT
Characteristics
Parameter
gate trigger current
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
I
L
latching current
V
D
= 12 V; I
G
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 8
V
D
= 12 V; I
G
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 8
V
D
= 12 V; I
G
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 8
I
H
V
T
V
GT
holding current
on-state voltage
gate trigger voltage
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
I
T
= 0.85 A; T
j
= 25 °C;
Fig. 10
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 11
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 °C;
Fig. 11
I
D
off-state current
V
D
= 600 V; T
j
= 125 °C
-
0.1
0.5
mA
0.2
0.3
-
V
-
-
-
-
1.35
0.9
12
1.6
2
mA
V
V
-
-
12
mA
-
-
20
mA
-
-
12
mA
0.5
-
10
mA
0.5
-
10
mA
Min
0.5
Typ
-
Max
10
Unit
mA
Static characteristics
BTA2008-600E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
8 November 2012
5 / 11
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