TO
-2
20F
BTA206X-800CT
3Q Hi-Com Triac
Rev. 2 — 19 December 2011
Product data sheet
1. Product profile
1.1 General description
Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full
pack" plastic package intended for use in circuits where high static and dynamic dV/dt and
high dI/dt can occur. This "series CT" triac will commutate the full RMS current at the
maximum rated junction temperature (T
j
= 150 °C) without the aid of a snubber. it is used
where "high junction operating temperature capability" is required.
1.2 Features and benefits
3Q technology for improved noise
immunity
High commutation capability with
maximum false trigger immunity
High immunity to false turn-on by dV/dt
High junction operating temperature
capability
High voltage capability
Isolated mounting base package
Planar passivated for voltage
ruggedness and reliability
Triggering in three quadrants only
1.3 Applications
Applications subject to high
temperature
Electronic thermostats (heating and
cooling)
Motor controls for home appliances
Rectifier-fed DC inductive loads e.g.
DC motors and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
T
j
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-state
voltage
non-repetitive peak on-state
current
junction temperature
RMS on-state current
full sine wave; T
h
≤
114 °C; see
Figure 1;
see
Figure 2;
see
Figure 3
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
see
Figure 4;
see
Figure 5
Conditions
Min
-
-
-
-
Typ
-
-
-
-
Max
800
60
150
6
Unit
V
A
°C
A
NXP Semiconductors
BTA206X-800CT
3Q Hi-Com Triac
Table 1.
Symbol
I
GT
Quick reference data
…continued
Parameter
gate trigger current
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; see
Figure 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-; T
j
= 25 °C;
see
Figure 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-; T
j
= 25 °C;
see
Figure 7
Min
4
4
4
Typ
-
-
-
Max
35
35
35
Unit
mA
mA
mA
Static characteristics
Dynamic characteristics
dV
D
/dt
rate of rise of off-state voltage
V
DM
= 536 V; T
j
= 150 °C; (V
DM
= 67% of
V
DRM
); exponential waveform; gate open
circuit
500
-
-
V/µs
dI
com
/dt
rate of change of commutating V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 6 A;
current
dV
com
/dt = 20 V/µs; (snubberless
condition); gate open circuit
10
-
-
A/ms
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
T2
G
n.c.
main terminal 1
main terminal 2
gate
mounting base; isolated
mb
T2
sym051
Simplified outline
Graphic symbol
T1
G
1 2 3
SOT186A (TO-220F)
3. Ordering information
Table 3.
Ordering information
Package
Name
BTA206X-800CT
BTA206X-800CT/L01
TO-220F
TO-220F
Description
plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3-lead TO-220 "full pack"
plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3-lead TO-220 "full pack"
Version
SOT186A
SOT186A
Type number
BTA206X-800CT
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 19 December 2011
2 of 14
NXP Semiconductors
BTA206X-800CT
3Q Hi-Com Triac
4. Limiting values
Table 4.
Symbol
V
DRM
I
T(RMS)
I
TSM
Limiting values
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
I
2
t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
full sine wave; T
h
≤
114 °C; see
Figure 1;
see
Figure 2;
see
Figure 3
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
see
Figure 4;
see
Figure 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
I
2
t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
t
p
= 10 ms; sine-wave pulse
I
T
= 10 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs
Conditions
Min
-
-
-
-
-
-
-
-
-
-40
-
Max
800
6
60
66
18
100
2
5
0.5
150
150
Unit
V
A
A
A
A
2
s
A/µs
A
W
W
°C
°C
In accordance with the Absolute Maximum Rating System (IEC 60134).
8
I
T(RMS)
(A)
6
003aag549
18
I
T(RMS)
(A)
15
003aag550
114 °C
12
4
9
6
2
3
0
-50
0
50
100
T
h
(°C)
150
0
10
-2
10
-1
1
10
surge duration (s)
Fig 1.
RMS on-state current as a function of heatsink
temperature; maximum values
Fig 2.
RMS on-state current as a function of surge
duration; maximum values
BTA206X-800CT
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 19 December 2011
3 of 14
NXP Semiconductors
BTA206X-800CT
3Q Hi-Com Triac
10
P
tot
(W)
8
003aag552
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
105
T
109.5
h(max)
(°C)
114
118.5
123
127.5
132
136.5
α = 180°
α
120°
90°
60°
30°
6
4
2
141
145.5
0
0
1.5
3
4.5
6
I
T(RMS)
(A)
150
7.5
Fig 3.
Total power dissipation as a function of RMS on-state current; maximum values
003aag541
80
ITSM
(A)
60
40
I
T
20
I
TSM
t
T
T
j(init)
= 25 °C max
0
1
10
10
2
number of cycles
10
3
Fig 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA206X-800CT
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 19 December 2011
4 of 14
NXP Semiconductors
BTA206X-800CT
3Q Hi-Com Triac
10
3
I
T
I
TSM
(A)
(1)
003aag542
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
2
10
10
-2
10
-1
1
10
t
p
(ms)
10
2
Fig 5.
Non-repetitive peak on-state current as a function of pulse width; maximum values
BTA206X-800CT
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 19 December 2011
5 of 14
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